A composition is provided in which a phosphorescent compound represented by formula (1) and a host material are blended with each other. The amount of chlorine atoms contained as impurities in the phosphorescent compound is 3.5 ppm by mass or less with respect to the total amount of solid contents blended in the composition

##STR00001##

In Formula (1), M.sup.1 represents an iridium atom; n.sup.1 represents an integer of 1 or more, n.sup.2 represents an integer of 0 or more, n.sup.1+n.sup.2 is 2 or 3; E.sup.1 and E.sup.2 represent a carbon atom or a nitrogen atom; R.sup.1 ring represents a 5-membered aromatic heterocyclic ring and R.sup.2 ring represents an aromatic hydrocarbon ring; A.sup.1-G.sup.1-A.sup.2 represents an anionic bidentate ligand; A.sup.1 and A.sup.2 represent a nitrogen atom; and G.sup.1 represents a single bond.

Provided is a treatment method of an emitting layer raw material in an OLED, comprising steps of: (1) providing the emitting layer raw material, and the emitting layer raw material comprising a host and a dopant, and in a vacuum glove box with protective gas, adding the host, the dopant and anhydrous ethanol into a polytetrafluoroethylene lining to be mixed uniformly, and putting the lining in a high pressure autoclave to be treated at a temperature of 40 to 60 celsius degrees for 18 to 36 hours to obtain a treatment liquid; (2) centrifuging the treatment liquid to collect a precipitate, and drying the collected precipitate to obtain the emitting layer raw material after treatment. The resulting treated emitting layer raw material achieves sufficient mixing and dispersion of the host and the dopant, and does not affect the subsequent use of vacuum evaporation method to form an emitting layer.

Visibly transparent photovoltaic devices are disclosed, such as those are transparent to visible light but absorb near-infrared light and/or ultraviolet light. The photovoltaic devices make use of transparent electrodes and near-infrared absorbing visibly transparent photoactive compounds, optical materials, and/or buffer materials.

Visibly transparent photovoltaic devices are disclosed, such as those are transparent to visible light but absorb near-infrared light and/or ultraviolet light. The photovoltaic devices make use of transparent electrodes and near-infrared absorbing visibly transparent photoactive compounds, optical materials, and/or buffer materials.

Visibly transparent photovoltaic devices are disclosed, such as those are transparent to visible light but absorb near-infrared light and/or ultraviolet light. The photovoltaic devices make use of transparent electrodes and near-infrared absorbing and/or ultraviolet absorbing visibly transparent photoactive compounds, which may be useful as photoactive materials, optical materials, and/or buffer materials.

Visibly transparent photovoltaic devices are disclosed, such as those are transparent to visible light but absorb near-infrared light and/or ultraviolet light. The photovoltaic devices make use of transparent electrodes and near-infrared absorbing visibly transparent photoactive compounds, optical materials, and/or buffer materials.

Provided are compounds having a first ligand L.sub.A of ##STR00001##
that are useful in OLEDs as emitters.

Provided is a method of purifying a phosphorescent dopant, the method including reacting the phosphorescent dopant with Ag.sub.2O.

A novel light-emitting element or a highly reliable light-emitting element is provided. The light-emitting element includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes at least a light-emitting layer. The light-emitting layer includes at least a first organic compound and a second organic compound. The energy for liberating halogen from a halogen-substituted product of the first organic compound in a radical anion state and in a triplet excited state is less than or equal to 1.00 eV. The amount of halogen-substituted product in the second organic compound is not increased with an increase in driving time of the light-emitting element.

A method for producing the photoelectric conversion element includes, in carbon nanotubes including semiconducting carbon nanotubes having different chiralities from each other and metallic carbon nanotubes, changing a chirality distribution in the semiconducting carbon nanotubes, separating the carbon nanotubes into the semiconducting carbon nanotubes and the metallic carbon nanotubes after changing the chirality distribution, covering the semiconducting carbon nanotubes with a polymer after performing separating, and forming a photoelectric conversion film including the semiconducting carbon nanotubes between a pair of electrodes after performing covering with the polymer.