The present invention provides an improved hole transport material, manufacturing method and an electroluminescent device having a central core made of tetramethyldihydrophenazine. A structural formula of the hole transport material is: ##STR00001##
The present invention adjusts the structure of donor units to change a capability of providing electrons thereof, designs a hole transport material of a high mobility and reasonable wires, and the material improves the compounding efficiency.

A method for producing an organic non-fullerene electron transport compound includes mixing naphthalene-1,4,5,8-tetracarboxylic dianhydride and an amine compound in dimethylformamide. The method also includes heating the mixture to a temperature greater than or equal to 70° and less than or equal to 160° C. for an amount of time greater than or equal to 1 hour and less than or equal to 24 hours. The method further includes isolating an organic non-fullerene electron transport compound reaction product.

The present invention relates to formulations comprising at least one organic semiconductor and at least one organic solvent, characterized in that the formulation contains less than 10,000 particles per liter formulation having an average size in the range from 0.1 to 20 μm, to their use for the preparation of electronic devices, to methods for preparing electronic devices using the formulations of the present invention, and to electronic devices prepared from such methods and formulations.

Provided is a method of purifying a phosphorescent dopant, the method including reacting the phosphorescent dopant with Ag.sub.2O.

A technology called RINSE (Removal of Incubated Nanotubes through Selective Exfoliation) is demonstrated. RINSE removes carbon nanotube (CNT) aggregates in CNFETs without compromising CNFET performance. In RINSE, CNTs are deposited on a substrate, coated with a thin adhesive layer, and sonicated. The adhesive layer is strong enough to keep the individual CNTs on the substrate, but not the larger CNT aggregates. When combined with a CNFET CMOS process as disclosed here, record CNFET CMOS yield and uniformity can be realized.

A solar cell, a preparation method for a solar cell, and a photovoltaic module, relating to the technical field of solar energy photovoltaics. The solar cell includes a crystalline silicon cell unit, and a down-conversion luminescence layer and a perovskite layer sequentially located on the light-facing surface of the crystalline silicon cell unit. The band gap of the perovskite layer becomes gradually smaller in the direction from the light-facing surface to the back surface. The band gap at the back surface of the perovskite layer is greater than or equal to the band gap of an absorption layer of the crystalline silicon cell unit. Because the band gap gradually decreases from large to small, the perovskite layer features a wide absorption spectrum, a long charge carrier free path, higher luminous efficiency, thus being able to broaden the spectral absorption range of the solar cell, and improve energy use and conversion efficiency. The complex processing of multi-layer battery superposition is avoided, the multiple film layer structure is simplified, losses in transmission of charge carriers between film layer interfaces and series structures are avoided, the conversion efficiency of the solar cell is further improved, and the processing difficulty is reduced, facilitating industrial production.

Visibly transparent photovoltaic devices are disclosed, such as those are transparent to visible light but absorb near-infrared light and/or ultraviolet light. The photovoltaic devices make use of transparent electrodes and near-infrared absorbing visibly transparent photoactive compounds, optical materials, and/or buffer materials.

Embodiments of the present invention relate to: an organic material for an organic electric element, which can improve the driving voltage, luminous efficiency, and service life characteristics of the organic electric element; a method for producing the organic material for an organic electric element; and an organic electric element using same.

A material of a light emitting layer, a manufacturing method thereof, and an electroluminescent device are disclosed. The material of the light emitting layer includes a spiral nanotube structure and luminescent particles. The manufacturing method of the material of the light emitting layer includes steps of manufacturing the spiral nanotube structure and steps of manufacturing a guest-host structure. The manufacturing method is easily achieved, and a compatibility of the material is high.

A deep-red light thermally activated delayed fluorescent material and a synthesizing method thereof, and an electroluminescent device are described. The deep-red light thermally activated delayed fluorescent material is a target compound reacted and synthesized by an electron donor and an electron acceptor. The target compound is a D-A molecular structure or a D-A-D molecular structure, wherein the electron acceptor is a planar electron acceptor with an ultra-low triplet state energy level, and a triplet state energy level of the target compound ranges from 1.0 to 2.0 eV. The synthesized deep-red light thermally activated delayed fluorescent material provides high electroluminescent performance, the synthesis efficiency thereof is improved, and the preparation of the highly efficient organic electroluminescent device is realized.