A technology called RINSE (Removal of Incubated Nanotubes through Selective Exfoliation) is demonstrated. RINSE removes carbon nanotube (CNT) aggregates in CNFETs without compromising CNFET performance. In RINSE, CNTs are deposited on a substrate, coated with a thin adhesive layer, and sonicated. The adhesive layer is strong enough to keep the individual CNTs on the substrate, but not the larger CNT aggregates. When combined with a CNFET CMOS process as disclosed here, record CNFET CMOS yield and uniformity can be realized.

A deep-red light thermally activated delayed fluorescent material and a synthesizing method thereof, and an electroluminescent device are described. The deep-red light thermally activated delayed fluorescent material is a target compound reacted and synthesized by an electron donor and an electron acceptor. The target compound is a D-A molecular structure or a D-A-D molecular structure, wherein the electron acceptor is a planar electron acceptor with an ultra-low triplet state energy level, and a triplet state energy level of the target compound ranges from 1.0 to 2.0 eV. The synthesized deep-red light thermally activated delayed fluorescent material provides high electroluminescent performance, the synthesis efficiency thereof is improved, and the preparation of the highly efficient organic electroluminescent device is realized.

A material of a light emitting layer, a manufacturing method thereof, and an electroluminescent device are disclosed. The material of the light emitting layer includes a spiral nanotube structure and luminescent particles. The manufacturing method of the material of the light emitting layer includes steps of manufacturing the spiral nanotube structure and steps of manufacturing a guest-host structure. The manufacturing method is easily achieved, and a compatibility of the material is high.

A technique comprising: producing an unencapsulated stack of layers defining one or more electronic devices including an organic semiconductor element; and then subjecting the unencapsulated stack of layers to a water removal treatment in a vacuum oven in the presence of an external water adsorbent; wherein the water removal treatment comprises heating the unencapsulated stack of layers in the vacuum oven for a time period longer than a control time period at which a spike in oven pressure attributable to the release of water from the stack of layers would occur with heating under the same treatment conditions but without the water absorbing material.

The present invention discloses an isodiketopyrrolopyrrole dye and use thereof. A series of pure organic dye based on isodiketopyrrolopyrrole are synthesized in the present invention, using 4,4′-dihexyloxytriphenylamine as an electron donor, isodiketopyrrolopyrrole as a π-bridge, and cyanoacetic acid as an electron acceptor and an anchoring group, and with a alkyl chain introduced on an isodiketopyrrolopyrrole group. The types of dyes have a relatively good light-harvesting performance as well as a relatively large steric hindrance, and they are not easy to gather while being absorbed on a semiconducting film. The pure organic dye with isodiketopyrrolopyrrole as an electronic π-bridge, which is used in a dye-sensitized solar cell, has a good ability of inhibiting the recombination of electrons, and the dye-sensitized solar cells have a high photoelectric conversion efficiency.

An electronically pure carbon nanotube ink, includes a population of semiconducting carbon nanotubes suspended in a liquid, the ink being essentially free of metallic impurities and organic material, and characterized in that when incorporated as a carbon nanotube network in a metal/carbon nanotube network/metal double diode, a nonlinear current-bias curve is obtained on application of a potential from 0.01 V to 100 V. The ink can be used to prepare air-stable n-type thin film transistors having performances similar to current thin film transistors used in flat panel displays amorphous silicon devices and high performance p-type thin film transistors with high-κ dielectrics.

A novel sublimation purification method is provided. Moreover, a novel sublimation purification apparatus is provided. A purification method using a purification apparatus including a purification portion where a substance is purified by vaporization, a temperature adjustment means, a gas supply means, and a gas discharge means is provided. In the purification method, the inside of the purification portion is made to have a first pressure with use of the gas discharge means, a temperature gradient is generated in the purification portion with use of the temperature adjustment means such that the substance is purified, the pressure in the purification portion is then set at a second pressure with use of the gas supply means, and the purification portion is cooled with use of the temperature adjustment means. The second pressure is higher than the first pressure and the second pressure is higher than or equal to an atmospheric pressure.

A thermally activated delayed fluorescence (TADF) material, a synthesizing method thereof, and an electroluminescent device is provided. The TADF is a target compound synthesized from an electron donator and an electron acceptor. The target compound has a D.sub.n-A molecular structure, wherein n denotes 1, 2, or 3, D is the electron donator, and A is the electron acceptor.

Provided are a method for manufacturing an electronic device capable of efficiently utilizing a material and a method for removing impurities using the same. The method for manufacturing an electronic device comprises the steps of: placing a transfer film on a plurality of functional layers which are positioned apart from each other on a source substrate; bringing a first transfer target into close contact with the lower surface of the transfer film by applying pressure to a portion of the transfer film that corresponds to the first transfer target from among the plurality of functional layers by using a probe; separating the transfer film from the source substrate in a state in which the first transfer target is in close contact with the lower surface; placing the transfer film on a target substrate in the state in which the first transfer target is in close contact with the lower surface; placing the first transfer target on the target substrate by applying pressure to a portion of the transfer film that corresponds to the first transfer target; and separating the transfer film from the target substrate in a state in which the first transfer target is positioned on the target surface.

The present invention relates to formulations comprising at least one organic semiconductor and at least one organic solvent, characterized in that the formulation contains less than 10,000 particles per liter formulation having an average size in the range from 0.1 to 20 μm, to their use for the preparation of electronic devices, to methods for preparing electronic devices using the formulations of the present invention, and to electronic devices prepared from such methods and formulations.