Patent classifications
H10K71/311
Reduced-pressure drying apparatus
A reduced-pressure drying apparatus, for drying solution on a substrate in a chamber in a depressurized state, includes a solvent collecting unit that is a net-shaped plate configured to temporarily collect a solvent in the solution vaporized from the substrate. The solvent collecting unit is provided to face the substrate in the chamber, and the net-shaped plate has an opening ratio of 60% to 80% and a thermal capacity of 850 J/K or less per 1 m.sup.2.
APPARATUS FOR MANUFACTURING ORGANIC MATERIAL AND METHOD OF MANUFACTURING ORGANIC MATERIAL USING THE APPARATUS
An apparatus for manufacturing an organic material includes an outer tube including an internal accommodating space, and at least one loading inner tube and at least one collecting inner tube disposed in the accommodation space, the loading inner tube including a mesh boat disposed in a first direction in which the loading inner tube extends.
Carbon nanotube-graphene hybrid transparent conductor and field effect transistor
A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. The nanotube-graphene hybrid film includes a substrate; nanotube film deposited over the substrate to produce a layer of nanotube film; and graphene deposited over the layer of nanotube film to produce a nanotube-graphene hybrid film.
Electronically pure single chirality semiconducting single-walled carbon nanotube for large scale electronic devices
An electronically pure carbon nanotube ink, includes a population of semiconducting carbon nanotubes suspended in a liquid, the ink being essentially free of metallic impurities and organic material, and characterized in that when incorporated as a carbon nanotube network in a metal/carbon nanotube network/metal double diode, a nonlinear current-bias curve is obtained on application of a potential from 0.01 V to 100 V. The ink can be used to prepare air-stable n-type thin film transistors having performances similar to current thin film transistors used in flat panel displays amorphous silicon devices and high performance p-type thin film transistors with high- dielectrics.
Method for removing permeates from sheet material
The invention relates to a method for absorbing permeates from a sheet material I, as used, for example, in organic electronic structures, this method being easy to carry out. Such a method includes, according to the invention, directly or indirectly bringing sheet material I into planar contact with a sheet material II, which contains at least one getter material and is capable of absorbing at least one permeate from sheet material I, there being no adhesive connection between sheet material I and sheet material II.
QLED manufacturing method
The present application discloses a QLED manufacturing method including: providing a substrate provided with an electron transport layer; depositing a solution on a surface of the electron transport layer, standing until the electron transport layer is infiltrated, and then performing a drying operation, wherein the solution includes a main solvent and a solute dissolved in the main solvent, a polarity of the solute is greater than a polarity of the main solvent, and the solution is not able to dissolve the electron transport material in the electron transport layer; preparing other film layers on the electron transport layer processed by the mixed solvent to prepare the QLED, such that the QLED at least includes: an anode and a cathode arranged oppositely, a quantum dot light emitting layer arranged between the anode and the cathode, and the electron transport layer between the quantum dot light emitting layer and the cathode.
Metal complexes for use as emitters in organic electroluminescence devices
The present invention relates to metal complexes and electronic devices, in particular organic electroluminescent devices containing said metal complexes.
QLED AND PREPARATION METHOD THEREOF
The present application discloses a QLED and a preparation method thereof. The QLED comprises an anode and a cathode being oppositely arranged, a quantum dot luminescent layer arranged between the anode and cathode, and an ETL arranged between the quantum dot luminescent layer and the cathode. Where the ETL includes a first ETL, and the first ETL is a zinc oxide film with a surface hydroxyl content being greater than or equal to 0.6. Or alternatively, the ETL contains zinc oxide, and the surface of at least some of the zinc oxide contains amino ligands and/or carboxyl ligands with 8-18 carbon atoms. The QLED provided in the present application improves an external quantum efficiency of the QLED device effectively.
Apparatus for manufacturing organic material and method of manufacturing organic material using the apparatus
An apparatus for manufacturing an organic material includes an outer tube including an internal accommodating space, and at least one loading inner tube and at least one collecting inner tube disposed in the accommodation space, the loading inner tube including a mesh boat disposed in a first direction in which the loading inner tube extends.
Compound for organic electronic element, organic electronic element using the same, and an electronic device thereof
The present invention provides a novel compound that can improve the luminous efficiency, stability and life span of the element, an organic electronic element using the same, and an electronic device thereof.