A substrate with conductive film includes a base material; and a film of a conductive metal oxide arranged on an upper part of the base material. The film includes, by a top plan view, a first region and a second region, the second region is configured of a same material as the first region, and an electric resistance of the second region is higher than an electric resistance of the first region. The second region includes a part configured by a plurality of cellular sections surrounded by a plurality of fine cracks. In the part, each fine crack has a width of 1 nm to 50 nm, and each cellular section has a largest measure of less than 10 μm.

An organic light-emitting diode display device having an organic light-emitting diode having an anode electrode, an organic emission layer, and a cathode electrode is provided. The organic light-emitting diode display device includes a low potential source line configured to supply a low potential source voltage; and at least one auxiliary cathode electrode configured to connect the low potential source line to the cathode electrode. The at least one auxiliary cathode electrode includes a first electrode layer connected to the low potential source line, and a second electrode layer connected to the first electrode layer at a plurality of first positions and connected to the cathode electrode at a plurality of second positions different from the plurality of first positions.

A transfer stamp comprising a nano-film layer is formed on a substantially transparent polymeric substrate, wherein the substantially transparent polymeric substrate comprises an indirect adhesion layer adhered to the nano-film. The nano-film layer of the transfer stamp is applied to a surface of a target substrate; the nano-film layer is positioned between the indirect adhesion layer and the target substrate.

The present disclosure provides a light-emitting device, a manufacturing method thereof, and a display device. The light-emitting device includes an anode, a cathode, a light-emitting layer between the anode and the cathode, and a hole transport layer between the anode and the light-emitting layer. The hole transport layer includes a first compound and a second compound, and an absolute value of an energy level of the highest occupied molecular orbital of the second compound is greater than or equal to 5 eV and less than or equal to 6.5 eV.

The present disclosure provides a light-emitting device, a manufacturing method thereof, and a display device. The light-emitting device includes an anode, a cathode, a light-emitting layer between the anode and the cathode, and a hole transport layer between the anode and the light-emitting layer. The hole transport layer includes a first compound and a second compound, and an absolute value of an energy level of the highest occupied molecular orbital of the second compound is greater than or equal to 5 eV and less than or equal to 6.5 eV.

A method for manufacturing a display device is provided. The method includes a step of forming a first layer over a first substrate, a terminal electrode over the first layer, a display element over the first layer, and a peeling layer overlapping with the terminal electrode, a step of forming a second layer over a second substrate, a step of attaching the first substrate to the second substrate with a bonding layer therebetween, a step of separating the first substrate from the first layer, a step of attaching a third substrate to the first layer, a step of separating the second substrate from the second layer together with part of the bonding layer, and a step of attaching a fourth substrate to the second layer. At least one of the first layer and the second layer includes an organic film.

An embodiment of the present disclosure provides an organic light emitting diode array substrate, an organic light emitting diode display and a method for manufacturing the same. Specifically, the organic light emitting diode array substrate comprises a substrate; a reflecting layer provided on the substrate; a photoresist layer provided on the reflecting layer, and a pixel electrode layer provided on the photoresist layer.

A field effect transistor (FET) structure includes a substrate, an internal gate, an insulation layer, a semiconductor strip, a gate dielectric insulator, and a gate conductor. The internal gate includes a floor portion located on the substrate and a wall portion extending from the floor portion. The insulation layer is located on the floor portion of the internal gate. The semiconductor strip is located on the wall portion and a portion of the insulation layer, and the semiconductor strip includes source/drain regions and a channel region adjacent to the source/drain regions. The gate dielectric insulator is located on the channel region. The gate conductor is located on the gate dielectric insulator.

An example provides a method for forming an apparatus including a substrate imprinted with a pattern for forming isolated device regions. A method may include imprinting an unpatterned area of a substrate with a pattern to form a patterned substrate having a plurality of recessed regions at a first level and a plurality of elevated regions at a second level, and depositing a first layer of conductive material over the patterned substrate with a plurality of breaks to form a plurality of bottom electrodes. The method may include depositing a layer of an active stack, with a second layer of conductive material, over the plurality of bottom electrodes to form a plurality of devices on the plurality of recessed regions isolated from each other by the plurality of elevated regions.

The present disclosure provides an organic light-emitting diode (OLED) display device, a manufacturing method thereof, and a display apparatus containing the OLED display device. A pattern of an anode layer is formed over a base substrate. A graphene oxide layer is formed over the pattern of the anode layer by an electroplating process. The graphene oxide layer is used as an auxiliary layer or is used as at least one of a hole injection layer and a hole transport layer in the OLED display device. Since the graphene oxide material has high work function, the hole injection barrier may be reduced and to the hole injection and hole transport capability of the OLED display device may be enhanced to improve light emitting performance of the OLED display device.