Metal oxide particles have p-type semiconductivity. The metal oxide particles have a volume-based particle size distribution having a first local maximum value and a second local maximum value. The first local maximum value is in a range of 0.1 μm or more and less than 5 μm, and the second local maximum value is in a range of 5 μm or more and less than 50 μm. A ratio of the second local maximum value to the first local maximum value is 0.5 or more and less than 2.0. 99% by volume or more of the metal oxide particles have a particle diameter in a range of from 0.1 to 50 μm.

Metal oxide particles have p-type semiconductivity. The metal oxide particles have a volume-based particle size distribution having a first local maximum value and a second local maximum value. The first local maximum value is in a range of 0.1 μm or more and less than 5 μm, and the second local maximum value is in a range of 5 μm or more and less than 50 μm. A ratio of the second local maximum value to the first local maximum value is 0.5 or more and less than 2.0. 99% by volume or more of the metal oxide particles have a particle diameter in a range of from 0.1 to 50 μm.

A method of forming microelectronic systems on a flexible substrate includes depositing a plurality of layers on one side of the flexible substrate. Each of the plurality of layers is deposited from one of a plurality of sources. A vertical projection of a perimeter of each one of the plurality of sources does not intersect the flexible substrate. The flexible substrate is in motion during the depositing the plurality of layers via a roll to roll feed and retrieval system.

The present invention provides a silicon-based micro display screen and method for manufacturing the same. The method includes following steps: providing a silicon substrate, defining a number of sub-pixel regions on the silicon substrate, and sequentially and respectively preparing an anode layer, an OLED layer, a cathode layer and a first protective layer in each sub-pixel region on the silicon substrate; plasma bombarding and removing the exposed OLED layer; forming a second protective layer on sides of the etched cathode layer, the protective layer and the OLED layer; sequentially performing other sub-pixels; and processing and forming a silicon-based micro-display screen based on the results of the above steps. In present invention, the etching and coating processes are carried out in a vacuum environment to prevent the OLED layer from being invaded by water vapor and oxygen, and prolong the service life of the silicon-based micro display screen.

The present invention provides a silicon-based micro display screen and method for manufacturing the same. The method includes following steps: providing a silicon substrate, defining a number of sub-pixel regions on the silicon substrate, and sequentially and respectively preparing an anode layer, an OLED layer, a cathode layer and a first protective layer in each sub-pixel region on the silicon substrate; plasma bombarding and removing the exposed OLED layer; forming a second protective layer on sides of the etched cathode layer, the protective layer and the OLED layer; sequentially performing other sub-pixels; and processing and forming a silicon-based micro-display screen based on the results of the above steps. In present invention, the etching and coating processes are carried out in a vacuum environment to prevent the OLED layer from being invaded by water vapor and oxygen, and prolong the service life of the silicon-based micro display screen.

A display substrate includes: a base substrate; a metal light-shielding layer disposed on the base substrate; a plurality of pixel units disposed on the base substrate; a plurality of first thin film transistors disposed on the metal light-shielding layer and configured to drive the pixel units; a plurality of photodiodes disposed on the metal light-shielding layer and configured to convert light emitted from the pixel units into photocurrents, each of the photodiodes including a first electrode; a plurality of second thin film transistors disposed on the metal light-shielding layer and configured to receive the photocurrents, so that light emission of the pixel units are compensated according to the photocurrents. Output terminals of the first thin film transistors are electrically connected to the metal light-shielding layer, and a gate of the first thin film transistor is electrically connected to the first electrode. Further disclosed are a display panel and a display substrate manufacturing method.

A display substrate includes: a base substrate; a metal light-shielding layer disposed on the base substrate; a plurality of pixel units disposed on the base substrate; a plurality of first thin film transistors disposed on the metal light-shielding layer and configured to drive the pixel units; a plurality of photodiodes disposed on the metal light-shielding layer and configured to convert light emitted from the pixel units into photocurrents, each of the photodiodes including a first electrode; a plurality of second thin film transistors disposed on the metal light-shielding layer and configured to receive the photocurrents, so that light emission of the pixel units are compensated according to the photocurrents. Output terminals of the first thin film transistors are electrically connected to the metal light-shielding layer, and a gate of the first thin film transistor is electrically connected to the first electrode. Further disclosed are a display panel and a display substrate manufacturing method.

Provided are a conductive laminate having low electric resistance and high transmittance over a long period of time, various optical elements provided with the conductive laminate, and a method for manufacturing the conductive laminate. In the conductive laminate 1 according to the present technology, a first transparent material layer 3, a metal layer 4 mainly composed of silver, and a second transparent material layer 5 are laminated on at least one surface of the transparent substrate 2 in this order from the transparent substrate 2 side. The first transparent material layer 3 is composed of a composite metal oxide containing at least zinc and tin and containing 10 atomic % or more and 90 atomic % or less of tin. The second transparent material layer 5 is composed of a metal oxide containing zinc and having a tin content of 10 atom % or less.

Provided are a conductive laminate having low electric resistance and high transmittance over a long period of time, various optical elements provided with the conductive laminate, and a method for manufacturing the conductive laminate. In the conductive laminate 1 according to the present technology, a first transparent material layer 3, a metal layer 4 mainly composed of silver, and a second transparent material layer 5 are laminated on at least one surface of the transparent substrate 2 in this order from the transparent substrate 2 side. The first transparent material layer 3 is composed of a composite metal oxide containing at least zinc and tin and containing 10 atomic % or more and 90 atomic % or less of tin. The second transparent material layer 5 is composed of a metal oxide containing zinc and having a tin content of 10 atom % or less.

A method for making a strain sensor is provided. The method includes growing an iron (Fe) thin seed layer with patterns on a top surface of a silicon oxide isolation layer formed on a top surface of a silicon wafer; synthesizing a plurality of vertically aligned carbon nanotubes (VACNTs) on top surfaces of the iron (Fe) thin seed layer to form electrodes of the strain sensor;

forming a first polydimethylsiloxane (PDMS) layer disposed on and between adjacent VACNTs of the plurality of VACNTs; peeling the first PDMS layer and the plurality of VACNTs embedded in the first PDMS layer off from the top surface of the silicon oxide isolation layer; and forming a second PDMS layer on a bottom surface of the plurality of VACNTs embedded in the first PDMS layer.