Patent classifications
H10K71/80
METHODS FOR FABRICATING OLEDs
Systems and methods for fabricating an OLED are provided, which include dispensing a substrate material onto a substrate carrier, the substrate carrier being rotated by one or more drums, curing the substrate material to form a substrate, depositing at least one OLED onto the substrate, and separating the substrate from the substrate carrier.
Flexible electronic devices
The present disclosure is related to display panels, especially to flexible electronic devices. By means of adding an inorganic membrane with surface roughness between a bonding layer and a PI film, in order to effectively improve the dimensional stability of plastic substrate and the water/oxygen barrier property of flexible substrate during the PI film fabrication and the follow-up process, improving the yield of good products and prolonging the working life thereof.
METHOD OF MANUFACTURING A FIELD EFFECT TRANSISTOR USING CARBON NANOTUBES AND A FIELD EFFECT TRANSISTOR
In a method of forming a gate-all-around field effect transistor (GAA FET), a fin structure including CNTs embedded in a semiconductor layer is formed, a sacrificial gate structure is formed over the fin structure, the semiconductor layer is doped at a source/drain region of the fin structure, an isolation insulating layer is formed, a source/drain opening is formed by patterning the isolation insulating layer, and a source/drain contact layer is formed over the doped source/drain region of the fin structure.
Display panel and method of fabricating the same
A display panel includes a thin film transistor substrate and a display layer disposed on the thin film transistor substrate and having a display. The thin film transistor substrate may include a base substrate, a stress relief layer disposed on the base substrate and including at least one stress relief pattern, and a driver layer disposed on the stress relief layer and including at least one thin film transistor coupled to the display.
AZOBENZENE DERIVATIVE, PREPARATION METHOD THEREOF, AZOPHENYL LIGHT CONTROL REVERSIBLE ADHESIVE AND METHOD OF USING THE SAME
An azobenzene derivative, a preparation method of the azobenzene derivative, an azophenyl light control reversible adhesive, and a method of using the azophenyl light control reversible adhesive are disclosed. The azobenzene derivative has a molecular structure as P1 or P2. In the abovementioned preparation method, the azobenzene derivative P1 or P2 is obtained from an esterification reaction of an azophenyl group, 3,4,5-tripentyloxybenzoic acid or 3,4,5-tri(dodecyloxy)benzoic acid, and 2,2′-dihydroxy-1,1′-binaphthol. The melting point of the azobenzene derivative P1 or P2 is modified commonly by alkyl chains and binaphthol to be slightly higher than room temperature.
DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY DEVICE
A manufacturing substrate, on which a lamination is formed, is disposed on a first substrate. The lamination includes a first sheet substrate having flexibility and adhered to the first substrate, an organic layer that emits light such that brightness is controlled in each of a plurality of pixels forming an image in a display area, and a sealing layer. A light blocking area that does not overlap the display area in a plan view is formed on the first substrate, and after the first substrate is irradiated with light on a side that opposite to the sheet substrate, the first substrate is delaminated from the first sheet substrate.
ELECTROLUMINESCENCE DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME
Provided is a method for manufacturing a display device. The method includes: forming a first electrode; forming an insulating film covering an edge portion of the first electrode; forming an EL layer over the first electrode and the insulating film; forming a second electrode over the EL layer; forming, over the second electrode, a first layer including an inorganic compound; forming, over the first layer, a second layer including an organic compound so as to overlap with the insulating film and the EL layer; thinning the second layer so that the first layer is exposed in a region overlapping with the insulating film; and forming, over the second layer, a third layer including an inorganic compound.
MANUFACTURING METHOD OF DISPLAY DEVICE, AND DISPLAY DEVICE
A manufacturing method of a display device includes locating a base member on a support substrate; and removing a part of the support substrate by preventing a first surface portion having a predetermined region in a border plane between the support substrate and the base member from being irradiated with laser light through the support substrate, whereas irradiating a second surface portion, other than the predetermined region, in the border plane between the support substrate and the base member with the laser light through the support substrate.
STRETCHABLE SUBSTRATE, ELECTRONIC APPARATUS HAVING THE STRETCHABLE SUBSTRATE, AND METHOD OF MANUFACTURING THE ELECTRONIC APPARATUS
Provided is a stretchable substrate, an electronic apparatus, and a method of manufacturing the electronic apparatus. The stretchable substrate includes a base part, first parts extruded from the base part, and second parts disposed between two adjacent first parts. The second parts have top surfaces positioned lower than the top surfaces of the first parts, and have wrinkles with random distribution.
Multiple carbon nanotube transfer and its applications for making high-performance carbon nanotube field-effect transistor (CNFET), transparent electrodes, and three-dimensional integration of CNFETs
A wafer-scale multiple carbon nanotube transfer process is provided. According to one embodiment of the invention, plasma exposure processes are performed at various stages of the fabrication process of a carbon nanotube device or article to improve feasibility and yield for successive transfers of nanotubes. In one such carbon nanotube transfer process, a carrier material is partially etched by a plasma process before removing the carrier material through, for example, a wet etch. By applying the subject plasma exposure processes, fabrication of ultra-high-density nanotubes and ultra-high-density nanotube grids or fabrics is facilitated. The ultra-high-density nanotubes and ultra-high-density nanotube grids or fabrics fabricated utilizing embodiments of the invention can be used, for example, to make high-performance carbon nanotube field effect transistors (CNFETs) and low cost, highly-transparent, and low-resistivity electrodes for solar cell and flat panel display applications. Further, three-dimensional CNFETs can be provided by utilizing the subject plasma exposure processes.