H10K85/10

DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

A display device including a plurality of pixels disposed on a substrate, each pixel including a plurality of sub-pixels; a first electrode disposed in each sub-pixel and connected to transistors for driving the plurality of sub-pixels to emit light; and a bank including a plurality of bank holes, each bank hole exposing a portion of the first electrode and defining emission light-areas of the sub-pixels. Further, each sub-pixel includes a sub-pixel pattern disposed on a bottom surface of the bank hole and contacting exposed surfaces of the first electrode, and extending continuously on sidewalls of the bank hole and along top outside edge surfaces of the bank. Also, a thickness of the sub-pixel pattern decreases step-by-step as the sub-pixel pattern extends along the top outside edge surfaces of the bank in a direction toward an adjacent sub-pixel.

HIGHLY EFFICIENT INVERTED POLYMER SOLAR CELLS USING AN INDIUM GALLIUM ZINC OXIDE INTERFACIAL LAYER
20230209846 · 2023-06-29 ·

Organic polymer semiconductor-based polymer solar cells (PSCs) have attracted considerable research interest due to having excellent electrical, structural, optical, mechanical, and chemical properties. In the past 20 years, considerable efforts have been made to develop PSCs. Generally, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is used as a hole transport layer (HTL) of the PSC to enhance hole extraction efficiency, but highly acidic PEDOT:PSS destroys an indium tin oxide (ITO) electrode and an active layer and thus reduces the lifetime of the device. To avoid this problem, some attempts have been made to develop inverted PSCs having different electron transport layers (ETLs). However, such a device has limited power conversion efficiency (PCE) due to low electron mobility of the ETL. Therefore, attempts have been made to enhance the PCE of inverted PSCs using indium gallium zinc oxide (IGZO) having optimized indium (In), gallium (Ga), and zinc (Zn) contents. Accordingly, inverted PSCs that have ZnO or IGZO (having varying In:Ga:Zn molar ratios) as an ETL and have an ITO/ETL/PTB7:PC.sub.71BM/MoO.sub.3/Al structure have been constructed. The PCE of the inverted PSC can be increased from 6.22% to 8.72% using IGZO having an optimized weight ratio of In, Ga, and Zn.

Organic solar cell

The present specification relates to an organic solar cell including a first electrode; a second electrode; and one or more organic material layers including a photoactive layer, wherein the photoactive layer includes an electron donor and an electron acceptor, the electron donor includes a polymer including a first unit represented by Chemical Formula 1; a second unit represented by Chemical Formula 2; and a third unit represented by Chemical Formula 3, and the electron acceptor includes a non-fullerene-based compound.

Fused dithieno benzothiadiazole polymers for organic photovoltaics

A composition comprising ##STR00001##
In this composition Ar1 is independently selected from the group consisting of: ##STR00002##
and Ar2 is selected from ##STR00003##
Additionally in this composition, R.sub.1, R.sub.5, R.sub.6, R.sub.7, R.sub.8, R.sub.9, R.sub.11, and R.sub.12 are independently selected from F, Cl, H, unsubstituted or substituted branched alkyls with 1 to 60 carbon atoms, and unsubstituted or substituted linear alkyls with 1 to 60 carbon atoms; and the compositional ratio of x/y ranges from about 1/99 to about 99/1, and n ranges from 1 to 1,000,000.

ORGANIC SEMICONDUCTING COMPOUNDS

The invention relates to novel organic semiconducting compounds containing an asymmetrically dihalogenated electron-deficient unit, to methods for their preparation and educts or intermediates used therein, to compositions, polymer blends and formulations containing them, to the use of the compounds, compositions and polymer blends as organic semiconductors in, or for the preparation of, organic electronic (OE) devices, especially organic photovoltaic (OPV) devices, perovskite-based solar cell (PSC) devices, organic photodetectors (OPD), organic field effect transistors (OFET) and organic light emitting diodes (OLED), and to OE, OPV, PSC, OPD, OFET and OLED devices comprising these compounds, compositions or polymer blends.

METAL COMPLEX, COMPOSITION AND LIGHT EMITTING ELEMENT
20230192737 · 2023-06-22 ·

A metal complex represented by the formula (1) is useful for production of a light emitting device excellent in light emission efficiency:

##STR00001##

M represents a rhodium, palladium, iridium, or a platinum atom; n.sup.1 represents 1, 2 or 3; n.sup.2 represents 0, 1 or 2; R.sup.1 to R.sup.6 represent a hydrogen atom, an alkyl group, or an aryl group; Ring R.sup.B1 and Ring R.sup.B2 represent an aromatic hydrocarbon ring or an aromatic hetero ring; one of Y.sup.a and Y.sup.b is a single bond, and the other is a group represented by the formula (C-1):

##STR00002##

R.sup.C represents a carbon atom, a silicon atom, a germanium atom, a tin atom or a lead atom; Ring R.sup.C1 and Ring R.sup.C2 represent an aromatic hydrocarbon ring or an aromatic hetero ring; and A.sup.1-G.sup.1-A.sup.2 represents an anionic bidentate ligand.

COMPOSITION FOR HOLE COLLECTING LAYER OF ORGANIC PHOTOELECTRIC CONVERSION ELEMENT
20230200203 · 2023-06-22 · ·

Provided is a composition for a hole collecting layer of an organic photoelectric conversion element, the composition containing a solvent and an electron transporting substance comprising a polythiophene derivative that includes a repeating unit represented by formula (1) or formula (1′).

##STR00001##

(In formula (1) and formula (1′), R.sup.1 denotes an alkyl group having 1-6 carbon atoms or a fluorine atom. In formula (1), M denotes a hydrogen atom, an alkali metal selected from the group consisting of Li, Na and K, NH(R.sup.2).sub.3 or HNC.sub.5H.sub.5. R.sup.2 groups are each independently a hydrogen atom or an optionally substituted alkyl group having 1-6 carbon atoms.)

LIGHT-EMITTING LAYER FOR PEROVSKITE LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING SAME, AND PEROVSKITE LIGHT-EMITTING DEVICE USING SAME
20170358759 · 2017-12-14 ·

Provided are: a light-emitting layer for a perovskite light-emitting device; a method for manufacturing the same; and a perovskite light-emitting device using the same. The method of the present invention for manufacturing a light-emitting layer for an organic and inorganic hybrid perovskite light-emitting device comprises a step of forming a first nanoparticle thin film by coating, on a member for coating a light-emitting layer, a solution comprising organic and inorganic perovskite nanoparticles including an organic and inorganic perovskite nanocrystalline structure. Thereby, a nanoparticle light emitter has therein an organic and inorganic hybrid perovskite having a crystalline structure in which FCC and BCC are combined; forms a lamella structure in which an organic plane and an inorganic plane are alternatively stacked; and can show high color purity since excitons are confined to the inorganic plane. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.

MULTI-LAYER DEVICE INCLUDING A LIGHT-TRANSMISSIVE ELECTRODE LAYER COMPRISING A POROUS MESH OR POROUS SPHERES
20230197310 · 2023-06-22 ·

A multi-laver device and its method of manufacture are disclosed. The multi-layer device comprises a first electrode layer, a first repair layer, a functional layer, and a second electrode layer. The first repair layer comprises a conductive hydrogel film or conductive hydrogel beads, the conductive hydrogel film or the conductive hydrogel beads comprising conductive filler particles dispersed in a cross-linked polymer. The repair layer protects the multi-layer device from electrical short circuits. A multilayer device is also disclosed including a light-transmissive electrode layer comprising a porous mesh or porous spheres.

Electroactive materials

There is disclosed a compound Formula I ##STR00001##
In Formula I: Z is CR.sup.4R.sup.5, C═CR.sup.4R.sup.5, SiR.sup.4R.sup.5, GeR.sup.4R.sup.5, NR.sup.4a, PR.sup.4a, P(O)R.sup.4a, O, S, SO, SO.sub.2, Se; SeO, SeO.sub.2, Te, TeO, or TeO.sub.2; R.sup.1-R.sup.3 are the same or different at each occurrence and are D, aryl, heteroaryl, alkyl, amino, silyl, germyl, deuterated aryl, deuterated heteroaryl, deuterated alkyl, deuterated amino, deuterated silyl, or deuterated germyl, where two groups selected from R.sup.1, R.sup.2, and R.sup.3 can be joined together to form a fused ring; R.sup.4-R.sup.5 are the same or different at each occurrence and are H, D, aryl, heteroaryl, alkyl, amino, silyl, germyl, deuterated aryl, deuterated heteroaryl, deuterated alkyl, deuterated amino, deuterated silyl, or deuterated germyl; R.sup.4ais alkyl, silyl, germyl, aryl, or a deuterated analog thereof; a is an integer from 0-4; b and c are the same or different and are an integer from 0-3.