An organic semiconductor mixture and an organic optoelectronic device containing the same are provided. A n-type organic semiconductor compound in the organic semiconductor mixture has a novel chemical structure so that the mixture has good thermal stability and property difference during batch production is also minimized. The organic semiconductor mixture is applied to organic optoelectronic devices such as organic photovoltaic devices for providing good energy conversion efficiency while in use.

The present specification relates to a copolymer including a first unit represented by Chemical Formula 1; and a second unit represented by Chemical Formula 2, and an organic solar cell including the same.

The present invention provides compounds comprising at least one unit of formula (1) or (1′) as well as a process for the preparation of the compounds, intermediates of this process, electronic devices comprising the compounds, and the use of the compounds as semiconducting materials. ##STR00001##

The invention relates to novel organic semiconducting compounds containing a polycyclic unit, to methods for their preparation and educts or intermediates used therein, to compositions, polymer blends and formulations containing them, to the use of the compounds, compositions and polymer blends as organic semiconductors in, or for the preparation of, organic electronic (OE) devices, especially organic photovoltaic (OPV) devices, perovskite-based solar cell (PSC) devices, organic photodetectors (OPD), organic field effect transistors (OFET) and organic light emitting diodes (OLED), and to OE, OPV, PSC, OPD, OFET and OLED devices comprising these compounds, compositions or polymer blends.

Heat resistance is improved.

A photoelectric conversion element 10 includes an anode 12, a cathode 16, and an active layer 14 provided between the anode and the cathode, in which the active layer contains at least one p-type semiconductor material and at least two n-type semiconductor materials, and a dispersive energy Hansen solubility parameter δD(P) of the at least one p-type semiconductor material and a first dispersive energy Hansen solubility parameter δD(Ni) and a second dispersive energy Hansen solubility parameter δD(Nii) of the at least two n-type semiconductor materials satisfy the following requirements (i) and (ii):

2.1 MPa.sup.0.5<|δD(P)−δD(Ni)|+|δD(Ni)−δD(Nii)|<4.0 MPa.sup.0.5  Requirement (i):

0.8 MPa.sup.0.5<|δD(P)−δD(Ni)| and 0.2 MPa.sup.0.5<|δD(Ni)−δD(Nii)|  Requirement (ii):

An ink for a display device, the ink includes: an organic material, wherein the organic material has a molecular weight greater than about 500 and less than about 1,000,000, and the organic material in the ink has a concentration and the molecular weight of the organic material satisfy:
y>−3.518*1n(x)+45.59,
wherein y is the concentration of the organic material, and x is the molecular weight of the organic material.

The present disclosure is drawn to bendable displays for electronic devices. In one example, a first display region including a glass panel that is rigid, the glass panel including a first interlocking edge. A second display region can include a plastic panel that is bendable, the plastic panel including a second interlocking edge that is shaped to inversely correspond with the first interlocking edge. An interlock zone where the first interlocking edge can be joined with the second interlocking edge such that the first display region and the second display region form a continuous display panel that is bendable at a location along the second display region.

Described herein are methods, compositions and articles of manufacture involving neutral conjugated polymers including methods for synthesis of neutral conjugated water-soluble polymers with linkers along the polymer main chain structure and terminal end capping units. Such polymers may serve in the fabrication of novel optoelectronic devices and in the development of highly efficient biosensors. The invention further relates to the application of these polymers in assay methods.

A quantum dot (QD) composite material includes at least two structural units arranged sequentially along a radial direction. The QD composite material includes a type A3 QD structural unit and a type A4 QD structural unit. The type A3 QD structural units has a gradient alloy composition structure with an energy level width increasing along the radial direction toward a surface, and the type A4 QD structural unit has a homogeneous alloy composition structure. An inner part of the QD composite material includes one or more QD structural units having a gradient alloy composition structure, and energy levels in adjacent QD structural units having gradient alloy composition structures are continuous. The QD composite material includes one or more QD structural units having a homogeneous alloy composition structure in a region close to the surface.

A polymer material includes a segment of an alternating copolymer of a structural unit of a specific structure and has a glass transition temperature of greater than or equal to about 50° C. and less than or equal to about 250° C. The polymer material is capable of improving luminescence life-span of an electroluminescence device, particularly a quantum dot light emitting device.