The present disclosure generally relates to multi-switch storage cells (MSSCs), three-dimensional MSSC arrays, and three-dimensional MSSC memory. Multi-switch storage cells include a cell select device, multiple resistive change elements, and an intracell wiring electrically connecting the multiple resistive change elements together and to the cell select device. MSSC arrays are designed (architected) and operated to prevent inter-cell (sneak path) currents between multi-switch storage cells, which prevents stored data disturb from adjacent cells and adjacent cell data pattern sensitivity. Additionally, READ and WRITE operations may be performed on one of the multiple resistive change elements in a multi-switch storage cell without disturbing the stored data in the remaining resistive change elements. However, controlled parasitic currents may flow in the remaining resistive change elements within the cell. Isolating each multi-switch storage cell in a three-dimensional MSSC array, enables in-memory computing for applications such as data processing for machine learning and artificial intelligence.

Methods for determining desired doping conditions for a semiconducting single-walled carbon nanotube (s-SWCNT) are provided. One exemplary method includes doping each of a plurality of s-SWCNT networks under a respective set of doping conditions; determining a thermoelectric (TE) power factor as a function of a fractional bleach of an absorption spectrum for the plurality of s-SWCNT networks doped under the respective sets of doping conditions; and using the function to identify one of the TE power factors within a range of the fractional bleach of the absorption spectrum. The identified TE power factor corresponds to the desired doping conditions.

Polymer comprising an indacen-4-one derivative, said polymer having general formula (IX), (X) or (XI): ##STR00001##
in which: W and W.sub.1, Z and Y, R.sub.1 and R.sub.2, are as described; D represents an electron-donor group; A represents an electron-acceptor group; n is an integer ranging from 10 to 500.

A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

Deterioration of an external quantum efficiency due to a heat treatment is suppressed.

A photoelectric conversion element 10 includes an anode 12, a cathode 16, and an active layer 14 provided between the anode and the cathode, in which the active layer contains at least one p-type semiconductor material and at least two n-type semiconductor materials, the at least one p-type semiconductor material is a polymer compound having a structural unit represented by the following Formula (I):

##STR00001##

in Formula (I), Ar.sup.1, Ar.sup.2, and Z are as defined in the specification, and the at least two n-type semiconductor materials contain one or more non-fullerene compounds.

Photovoltaic devices having photoactive layers coupled to buffer layers are disclosed. Such devices may be transparent to visible light but absorb near-infrared light and/or ultraviolet light. The photovoltaic devices may include a p-phenylene layer that acts as a buffer layer. The photovoltaic devices may include one or more photoactive layers. The one or more photoactive layers may include a single planar heterojunction, a single bulk heterojunction (BHJ), or multiple stacked BHJs that have complementary absorption characteristics, among other possibilities.

A photoelectric converter includes a first electrode containing a transparent conductive material, a second electrode, and a multilayer body that is positioned between the first electrode and the second electrode, and that has a photoelectric conversion function. The multilayer body includes a first layer and a second layer positioned between the first layer and the second electrode. The first layer absorbs light in a first wavelength band of 360 nm or longer and transmits light in a second wavelength band, the second wavelength band including wavelengths longer than wavelengths included in the first wavelength band. The second layer absorbs the light in the second wavelength band. The multilayer body substantially does not have sensitivity for photoelectric conversion in the first wavelength band and has sensitivity for photoelectric conversion in the second wavelength band.

An imaging device includes a photoelectric conversion element that includes a first electrode, a second electrode facing the first electrode, and a photoelectric conversion layer located between the first electrode and the second electrode; and a charge detection circuit that reads a charge generated in the photoelectric conversion element. The photoelectric conversion layer is a bulk heterojunction layer that contains a phthalocyanine derivative or a naphthalocyanine derivative and a fullerene polymer. In the fullerene polymer, a fullerene or a fullerene derivative is crosslinked by a crosslinking structure represented by general formula (1) below. In general formula (1), X is a bifunctional functional group.

NCH.sub.2XCH.sub.2N  (1)

Disclosed are an n-type semiconductor including compound represented by Chemical Formula 1 or Chemical Formula 2, an image sensor, and an electronic device.

##STR00001##

In Chemical Formula 1 and Chemical Formula 2, each substituent is as defined in the detailed description.

The present disclosure relates to a device that includes a perovskite layer; and a first layer that includes a molecule having a structure according to formula (I)

##STR00001##

Wherein the perovskite layer and the first layer are in physical contact, n is between 1 and 10, inclusively, R.sub.1 includes at least one of hydrogen, a first alkyl group, a first alkoxy group, and/or a first halogen, R.sub.2 includes at least one of hydrogen, a second alkyl group, a second alkoxy group, and/or a second halogen, R.sub.1 is bonded to aromatic ring (A) at carbon atom (1), carbon atom (2), carbon atom (3), or carbon atom (4), R.sub.2 is bonded to aromatic ring (B) at carbon atom (5), carbon atom (6), carbon atom (7), or carbon atom (8), and R.sub.1 and R.sub.2 are the same or different.