A method for forming a PN junction in graphene includes: forming a graphene layer, and forming a DNA molecule layer on a partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the graphene layer with a predetermined doping property upon adsorption on the graphene layer. The DNA molecule has a nucleotide sequence structure designed for doping of graphene so that doped graphene has a specific semiconductor property. The DNA molecule is coated on the surface of the graphene layer of which the partial region is exposed by micro patterning, and thereby, PN junctions of various structures may be formed by a region coated with the DNA molecule and a non-coated region in the graphene layer.

A method for forming a nanostructure array and a field effect transistor device on a substrate are provided. The method for forming the nanostructure array includes: providing a template solution comprising template nanostructures; depositing at least one template nanostructure onto the substrate by contacting the template solution with the substrate; and forming on the substrate at least one fixation structure each intersecting with all or a portion of the at least one template nanostructure to fix all or a portion of the at least one template nanostructure on the substrate.

A transfer stamp comprising a nano-film layer is formed on a substantially transparent polymeric substrate, wherein the substantially transparent polymeric substrate comprises an indirect adhesion layer adhered to the nano-film. The nano-film layer of the transfer stamp is applied to a surface of a target substrate; the nano-film layer is positioned between the indirect adhesion layer and the target substrate.

The present disclosure provides an organic light-emitting diode (OLED) display device, a manufacturing method thereof, and a display apparatus containing the OLED display device. A pattern of an anode layer is formed over a base substrate. A graphene oxide layer is formed over the pattern of the anode layer by an electroplating process. The graphene oxide layer is used as an auxiliary layer or is used as at least one of a hole injection layer and a hole transport layer in the OLED display device. Since the graphene oxide material has high work function, the hole injection barrier may be reduced and to the hole injection and hole transport capability of the OLED display device may be enhanced to improve light emitting performance of the OLED display device.

A light-emitting device includes a first electrode; a second electrode that overlaps the first electrode in a plan view; an emission layer disposed between the first electrode and the second electrode; a hole transport region disposed between the first electrode and the emission layer; and an electron transport region disposed between the emission layer and the second electrode, and at least one of the hole transport region or the electron transport region includes a recess portion.

Photovoltaic devices having photoactive layers coupled to buffer layers are disclosed. Such devices may be transparent to visible light but absorb near-infrared light and/or ultraviolet light. The photovoltaic devices may include a p-phenylene layer that acts as a buffer layer. The photovoltaic devices may include one or more photoactive layers. The one or more photoactive layers may include a single planar heterojunction, a single bulk heterojunction (BHJ), or multiple stacked BHJs that have complementary absorption characteristics, among other possibilities.

An electroluminescent (EL) device and a method of manufacturing same, and an electronic device. The EL device includes a first electrode, a second electrode, and a functional structural layer disposed between the first electrode and the second electrode. The functional structural layer includes a doping material and a graphene oxide material, and the doping material includes a plurality of conjugated ions.

A heterostructure comprising at least one carbon nanomembrane on top of at least one carbon layer, a method of manufacture of the heterostructure, and an electronic device, a sensor and a diagnostic device comprising the heterostructure. The heterostructure comprises at least one carbon nanomembrane on top of at least one carbon layer, wherein the at least one carbon nanomembrane has a thickness of 0.5 to 5 nm and the heterostructure has a thickness of 1 to 10 nm.

A stacked structure includes: an insulating substrate; a graphene film that is formed on the insulating substrate; and a protective film that is formed on the graphene film and is made of a transition metal oxide, which is, for example, Cr.sub.2O.sub.3. Thereby, at the time of transfer of the graphene, polymeric materials such as a resist are prevented from directly coming into contact with the graphene and nonessential carrier doping on the graphene caused by a polymeric residue of the resist is suppressed.

Provided are devices and methods to detect the presence of volatile organic compounds related to the presence of a disease state in a biological sample. The devices may include a detection moiety such as a polynucleotide in electronic communication with a semiconductor such as graphene or a carbon nanotube.