Amorphous two-dimensional graphene-like carbon films provide benefits to a variety of applications due to advantageous electrical, mechanical, and chemical properties. Methods are provided to efficiently and cheaply create high-quality amorphous two-dimensional carbon films with embedded graphene-like nanocrystallites using coal as a precursor. These methods employ solution-phase deposition of coal-derived graphene-containing quantum dots followed by relatively low-temperature annealing/crosslinking of the quantum dots to form a single two-dimensional layer of carbon that includes a plurality of randomly-oriented discrete graphene domains connected to each other via amorphous carbon regions. Multi-layer films can be easily created by repeating the deposition and annealing processes. Two-dimensional carbon films formed in this manner exhibit improved properties when compared to crystalline graphene sheets and have properties especially suited to use as the storage medium of memristors. Further processing can result in large free-standing two-dimensional graphene-like carbon thin films that can be used as membranes or for other applications.

A graphene nanostructure has a nanographene, a π conjugated functional group bonded to the nanographene via a pyrazine skeleton, and at least one Br group and/or at least one CN group introduced into the π conjugated functional group. A graphene nanostructure preferably has an average size of 1 nm or larger to 100 nm or smaller, a band gap of 0.01 eV or higher to 1.2 eV or lower, and/or a HOMO level of −6.0 eV or higher to −4.0 eV or lower. As the π conjugated functional group into which the Br group(s) and/or the CN group(s) are/is introduced, a 4-bromobenzene group, a 4,5-dibromobenzene group, a 5-bromopyridine group, a 5-bromopyrazine group, a benzonitrile group, a phthalonitrile group, or a 2,3-dicyanopyrazine group is desirable.

A conductor includes a substrate, a first conductive layer disposed on the substrate and including two or more islands including graphene, and a second conductive layer disposed on the first conductive layer and including a conductive metal nanowire, wherein at least one of an upper surface and a lower surface of the islands including graphene includes a P-type dopant.

The invention relates to compounds that can be used in an organic electronic device as an active compound, in particular for use in electronic devices. The invention further relates to a process for preparing the compounds according to the invention, and to electronic devices comprising the same.

The present invention relates to a method for forming nano-gaps in graphene. The method may include applying a voltage across a region of graphene such that a nano-gap which extends across the entire width of the graphene is formed, wherein the region across which the voltage is applied may include a point which is the narrowest in the region.

The invention provides reversible bio sensitized photoelectric conversion and H.sub.2 to electricity conversion devices which use one or more of a proton pumping photoactive biological layers to generate a proton gradient that is harnessed to produce electrical energy. It is also provided a photoelectric conversion element that incorporates the device of the present invention.

The present disclosure provides a flexible transparent electrode, a flexible display panel, related manufacture methods, and a display device. The flexible transparent electrode includes a graphene body and metal nanowires. At least part of the metal nanowires is inserted into the graphene body to form an interpenetrating body structure.

Through selective incorporation of high carrier mobility graphene monolayers into low cost, NIR-sensitive SiGe detector layer structures, a device combining beneficial features from both technologies can be achieved. The SiGe in such hybrid SiGe/graphene detector devices serves as the NIR absorbing layer, or as the quantum dot material in certain device iterations. The bandgap of this SiGe layer where absorption of photons and photogeneration of carriers mainly takes place may be tuned by varying the concentrations of Ge in the SixGe1-x material. This bandgap and the thickness of this layer largely impact the degree and spectral characteristics of absorption properties, and thus the quantum efficiency or responsivity of the device. The main function and utility of the graphene monolayers, which are nearly transparent to incident light, is to facilitate the extraction and transport of electron and hole carriers from the SiGe absorbing layer through the device.

A flexible device (1) includes an insulating substrate (2), a source electrode (3), a drain electrode (4), and an extended gate electrode (5) formed on a surface of the insulating substrate (2) at intervals, a channel (6) arranged at an interval between the source electrode (3) and the drain electrode (4), and a gate dielectric (7) formed so as to cover all of the channel (6) and a part of the extended gate electrode (5), in which the insulating substrate (2) is a flexible thin film having light transmissivity, the extended gate electrode (5) is a carbon material thin film having biocompatibility and light transmissivity, the channel (6) is an organic semiconductor thin film, and the gate dielectric (7) is an ionic liquid or an ionic gel.

Provided is a display device. The display device includes a light emitting element layer including a plurality of light emitting elements, and a light control layer on the light emitting element layer and overlapping the light emitting element layer on a plane. At least one of the light emitting elements and the light control layer includes an amorphous carbon light emitter.