An organic photovoltaic device comprises a substrate, a reflector positioned over the substrate, a first electrode positioned over at least a first portion of the reflector, a polaritonic antenna layer positioned over a second portion of the reflector different from the first portion, electrically connected to the first electrode, and at least one unit reaction cell positioned over at least part of the first electrode, the at least one unit reaction cell comprising a heterojunction layer comprising a donor material and an acceptor material, positioned over the first electrode, and a second electrode positioned over the heterojunction, wherein the polaritonic antenna and the reflector are configured to convert incoming photonic energy to polaritons. A method of fabricating an organic photovoltaic device is also disclosed.

There is provided an imaging device and an electronic apparatus including an imaging device, where the imaging device includes: a first electrode; a second electrode; a photoelectric conversion layer disposed between the first electrode and the second electrode and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material, where the second organic semiconductor material comprises a subphthalocyanine material, and where the second organic semiconductor material has a highest occupied molecular orbital level ranging from −6 eV to −6.7 eV.

Disclosed herein is a composition and a method for energy harvesting and the autonomous detection of structural failure. This method can be used to monitor, for example, the structural integrity of unmanned aircraft systems.

An imaging apparatus includes a first electrode, a second electrode, and a photoelectric conversion layer located between the first electrode and the second electrode. The photoelectric conversion layer contains a first material, a second material, and a third material. The first material is a fullerene or a fullerene derivative. The second material is a donor-like organic semiconductor material. The average absorption coefficient in the visible light wavelength range of the third material is less than the average absorption coefficient in the visible light wavelength range of the first material.

A thin-film transistor and a manufacturing method thereof are provided, and the manufacturing method includes: forming a source electrode, a drain electrode and a planarization layer on a substrate, and patterning the planarization layer to form a first portion disposed between the source electrode and the drain electrode, a second portion disposed at a side of the source drain, and a third portion disposed at a side of the drain electrode. Upper surfaces of all the first portion, the second portion, and the third surface are flush with top portions of both the source electrode and the drain electrode.

Fullerene derivative blends are described herein. The blends are useful in electronic applications such as, e.g., organic photovoltaic devices.

An inverted polymer photovoltaic cell (or solar cell) includes an anode; a first anodic interlayer (buffer layer) based on PEDOT:PSS [poly(3,4-ethylenedioxythiophene):polystyrene sulfonate]; an active layer having at least one photoactive organic polymer as an electron donor and at least one electron acceptor organic compound; a cathodic interlayer (buffer layer); and a cathode. A second anodic interlayer (buffer layer) includes at least one heteropolyacid and, optionally, at least one amino compound is placed between the first anodic interlayer (buffer layer) and the active layer.

The inverted polymer photovoltaic cell (or solar cell) shows good values of photoelectric conversion efficiency (power conversion efficiency—PCE) (η) and, in particular, a good level of adhesion between the different layers, more specifically between the active layer and the first anodic interlayer (buffer layer).

A nanocarbon ink contains nanocarbons, a solvent, and a polyoxyethylene alkyl ether represented by the following expression: C.sub.nH.sub.2n(OCH.sub.2CH.sub.2).sub.mOH where, n=12 to 18 and m=20 to 100.

A photoelectric conversion element having a high photoelectric conversion efficiency in a visible light region (particularly, a wavelength range of 450 to 650 nm) even after being subjected to heat treatment (annealing) is provided. In addition, an imaging element, an optical sensor, and a compound are provided.

The photoelectric conversion element includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film, and the photoelectric conversion film contains a compound represented by Formula (1).

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An organic electroluminescent device having an anode, wherein the anode comprises at least one first layer, the first layer being made of partially reduced graphene oxides.