A perovskite radiovoltaic-photovoltaic battery having a first electrode, a first charge transport layer, a perovskite layer, a second charge transport layer, and a second electrode in sequence, wherein the first electrode is a transparent electrode, the first charge transport layer is an electron transport layer and the second charge transport layer is a hole transport layer, or the first charge transport layer is a hole transport layer and the second charge transport layer is an electron transport layer, and the second electrode is a radiating electrode formed by compounding an electrical conductor material with a radioactive source.

A perovskite solar cell includes following components provided successively from bottom to top: a transparent conductive glass substrate, a first transport layer, a perovskite layer, a second transport layer, a conductive electrode, and a back plate glass. The perovskite solar cell further includes an encapsulating adhesive. The transparent conductive glass substrate, the back plate glass, and the encapsulating adhesive form an enclosed space. The enclosed space contains a mixture of an inert gas and a methylamine gas, where a volume ratio of the inert gas to the methylamine gas is in a range from 9:1 to 5:5.

A perovskite solar cell includes following components provided successively from bottom to top: a transparent conductive glass substrate, a first transport layer, a perovskite layer, a second transport layer, a conductive electrode, and a back plate glass. The perovskite solar cell further includes an encapsulating adhesive. The transparent conductive glass substrate, the back plate glass, and the encapsulating adhesive form an enclosed space. The enclosed space contains a mixture of an inert gas and a methylamine gas, where a volume ratio of the inert gas to the methylamine gas is in a range from 9:1 to 5:5.

A light-emitting layer for a halide perovskite light-emitting device, a method for manufacturing the same and a perovskite light-emitting device using the same are disclosed. The light-emitting layer can be manufactured by forming a first nanoparticle thin film by coating, on a member, a solution comprising halide perovskite nanoparticles having a halide perovskite nanocrystalline structure. Thereby, a nanoparticle light emitter has therein a halide perovskite having a crystal structure in which FCC and BCC are combined; and can show high color purity. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.

Disclosed are vapor transport deposition systems and methods for alternating sequential vapor transport deposition of multi-component perovskite thin-films. The systems include multiple vaporizing sources that are mechanically or digitally controlled for high throughput deposition. Alternating sequential deposition provides faster sequential deposition, and allows for reduced material degradation due to different vapor temperatures.

Photovoltaic devices, and methods of fabricating photovoltaic devices. The photovoltaic devices may include a first electrode, at least one quantum dot layer, at least one semiconductor layer, and a second electrode. The first electrode may include a layer including Cr and one or more silver contacts.

The present invention refers to a three terminal tandem solar generation unit (1) comprising: —a first absorbing layer (7) made of a perovskite type compound, —a second absorbing layer (11, 11′), —a first and a second interdigitated front contacts (5a, 5b) arranged on the front side of the first absorbing layer (7), the first front contact (5a) having a first polarity and the second front contact (5b) having a second polarity, —a back contact (17, 17′) having the first or the second polarity arranged on the back side of the second absorbing layer (11, 11′), —an interface layer (9, 90, 9′, 90′) arranged between the first (7) and the second (11, 11′) absorbing layers comprising a first semiconductor sub-layer (9a, 90a, 9a′, 90a′) doped according to the first polarity and a second sub-layer (9b, 90b, 9b′, 90b′) doped according to the second polarity and configured for enabling carriers associated with a polarity different than the polarity of the back contact (17, 17′) to be transferred from the second absorbing layer (11, 11′) to the first absorbing layer (7) to be collected by the front contact (5a, 5b) having a polarity different than the polarity of the back contact (17, 17′).

A tandem cell and a manufacturing method thereof are provided in the present disclosure, so as to improve hole transmission performance of the tandem cell. The tandem cell includes a bottom cell, a hole transporting layer formed on the bottom cell, a perovskite absorbing layer formed on the hole transporting layer, and a transparent conducting layer formed above the perovskite absorbing layer. A material of the hole transporting layer includes a semiconductor material with a p-type delafossite structure, and a valence band top energy level of the hole transporting layer sequentially decreases in a direction away from the bottom cell, which has dual functions of carrier transport and carrier recombination, so as to simplify a cell structure and optimize the photoelectric conversion efficiency. The tandem cell and the manufacturing method thereof according to the present disclosure are used for manufacturing the tandem cell.

A tandem cell and a manufacturing method thereof are provided in the present disclosure, so as to improve hole transmission performance of the tandem cell. The tandem cell includes a bottom cell, a hole transporting layer formed on the bottom cell, a perovskite absorbing layer formed on the hole transporting layer, and a transparent conducting layer formed above the perovskite absorbing layer. A material of the hole transporting layer includes a semiconductor material with a p-type delafossite structure, and a valence band top energy level of the hole transporting layer sequentially decreases in a direction away from the bottom cell, which has dual functions of carrier transport and carrier recombination, so as to simplify a cell structure and optimize the photoelectric conversion efficiency. The tandem cell and the manufacturing method thereof according to the present disclosure are used for manufacturing the tandem cell.

An optoelectronic device includes a semiconductor substrate, wherein a first transport layer is formed on a first partial region of the semiconductor substrate; a first insulation layer is formed on a second partial region around the first partial region; the first transport layer is formed on the first insulation layer; an interface layer is formed on the first transport layer; a light-emitting material layer containing perovskite material is formed on the interface layer; a second insulation layer is formed on the light-emitting material layer in the second partial region and on the light-emitting material layer near a second partial region side in the first partial region, so that the characteristic size of a single light-emitting pixel or effective working region is adjustable.