The disclosure discloses a perovskite film layer, a device and a preparation method for effectively improving the efficiency of perovskite optoelectronics. The perovskite film layer consists of a layer with discontinuous, irregularly distributed perovskite crystal grains and an organic insulating layer with a low refractive index embedded between the perovskite crystal grains. The perovskite crystal grains form a plurality of convex portions, and the organic insulating layer forms a plurality of concave portions between the convex portions. By adding an excess of an alkylammonium salt and/or an organic molecule with a specific functional group to perovskite precursor solution, a concave-convex film layer structure is spontaneously formed, and an upper charge transport layer and an electrode form pleated concave-convex structures. Such a special perovskite thin film structure formed by a simple solution method can effectively improve the light-outcoupling efficiency and enhance the performance of the perovskite light-emitting device.

The disclosed photoconverter is related to the technology of thin-film hybrid semiconductor photoconverters. Thin-film hybrid photoconverters with heterojunctions and layers is modified with Ti.sub.3C.sub.2T.sub.x MXenes for use in visible sunlight spectrum and UV-IR regions (380 to 780 nm). The device with absorber layer of metal-organic APbX.sub.3 perovskites was fabricated in n-i-p and p-i-n configurations, including structures with carbon electrodes, and stabilized characteristics were stabilized by introduction of thin Ti.sub.3C.sub.2T.sub.x MXene layers (5-50 nm) at the junction and contact interfaces, i.e., APbX.sub.3 perovskite absorber layer/MXene, electron transport layer/MXene, cathode electrode/MXene, as well as by doping of carbon electrode for reduction of the work function by incorporating of MXenes into the bulk of material with appropriate weight percentage for providing ohmic contact with higher efficiency of charge collection.

A solar cell system and a flexible solar panel are disclosed herein. The solar cell system includes a glass housing, a set of rows of solar cells each defining a front side and a rear side and arranged within the glass housing. The solar cell system can also include a reflective element disposed in the glass housing and facing the rear side of the set of rows of solar cells and a first terminal coupled to a first end of the set of rows of solar cells, traversing through and sealed against the first end of the glass housing. The solar cell system can be configured with other solar cell systems into the flexible solar panel that is deployable in a wide range of potential applications.

A light-emitting layer for a halide perovskite light-emitting device, a method for manufacturing the same and a perovskite light-emitting device using the same are disclosed. The light-emitting layer can be manufactured by forming a first nanoparticle thin film by coating, on a member, a solution comprising halide perovskite nanoparticles having a halide perovskite nanocrystalline structure. Thereby, a nanoparticle light emitter has therein a halide perovskite having a crystal structure in which FCC and BCC are combined; and can show high color purity. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.

The present invention relates to a method for manufacturing: a perovskite solar cell in which the laminated shape and the composition of a perovskite absorbing layer are controlled; and a tandem solar cell comprising the perovskite solar cell, and the perovskite absorbing layer is formed through a method for manufacturing a solar cell, comprising the steps of: forming, on a substrate, an inorganic seed layer conformal with the substrate by using a BO source, an A-doped BO source or an AxOy source and the BO source; and supplying organic halides onto the seed layer, and thus a perovskite thin film having a complex composition conformal with the substrate can be formed such that an effect of enabling light absorption to increase can be achieved.

The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I]; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I] selected from Cu.sup.+, Ag.sup.+ and Au.sup.+; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X].

A photosensor includes a first electrode, a second electrode that opposes the first electrode, and a photoelectric conversion layer that is disposed between the first electrode and the second electrode and converts incident light into electric charges. At least one electrode selected from the group consisting of the first electrode and the second electrode is light-transmissive. The photoelectric conversion layer contains a perovskite compound. The fluorescence spectrum of the perovskite compound has a first peak at a first wavelength and a second peak at a second wavelength that is longer than the first wavelength. The photoelectric conversion layer is in ohmic contact with each of the first electrode and the second electrode.

The present disclosure provides a display panel, a method for manufacturing the same, and a display device. The display panel includes a power supply, and includes a display area and a non-display area. A solar cell is disposed in the non-display area and is configured to convert external light into electric energy when the external light is irradiated on the solar cell, and charge the power supply with the converted electric energy.

Two-dimensional halide perovskites are provided. The perovskites have two-dimensional Dion-Jacobson phases and are composed of a plurality of inorganic perovskite layers separated by 3-(aminomethyl)piperidinium (3AMP) and/or 4-(aminomethyl)piperidinium (4AMP) spacer cations. The halide perovskites may have a single perovskitizer cation or mixed perovskitizer cations. Also provided are radiation-absorbing materials comprising the perovskites and photovoltaic cells comprising the radiation-absorbing materials as photoactive materials.

A semiconductor device includes a substrate, a first electrode located on the substrate, a metal halide perovskite layer located on the first electrode, a second electrode located on the metal halide perovskite layer, and passivation molecules that passivate the metal halide perovskite layer. The metal halide perovskite layer has (1) a top surface defect located in a top surface and (2) an inter-grain defect located at an interface between two adjacent grains, and the passivation molecules passivate at least one of the top surface defect and the inter-grain defect.