Provided are a photoelectric conversion element that can generate power with high efficiency and has high durability, and a method for manufacturing the same.

A photoelectric conversion element according to an embodiment includes a first electrode, an active layer having a perovskite structure containing a halogen ion, and a second electrode having light transmissivity, in which a Warburg coefficient of the active layer measured by an AC impedance spectroscopy method is specified. The element can be manufactured by applying a solution containing a precursor of the perovskite structure and then performing appropriate annealing treatment or gas blowing.

Provided are a photoelectric conversion element that can generate power with high efficiency and has high durability, and a method for manufacturing the same.

A photoelectric conversion element according to an embodiment includes a first electrode, an active layer having a perovskite structure containing a halogen ion, and a second electrode having light transmissivity, in which a Warburg coefficient of the active layer measured by an AC impedance spectroscopy method is specified. The element can be manufactured by applying a solution containing a precursor of the perovskite structure and then performing appropriate annealing treatment or gas blowing.

Methods of making luminescent perovskite-polymer composites are provided and structures using the same. Perovskite-polymer composites made by the method described herein are provided. The perovskite-polymer composite is useful in many applications including downconverters for backlight units (BLU) of liquid crystal displays (LCDs), as well as for and could be used for light emitting devices, lasers or as active absorber or passive luminescent concentrators for solar photovoltaic applications.

A composition for use in a preparation of a nickel oxide layer that includes Ni(NO.sub.3).sub.2.nH.sub.2O, wherein n is 0, 4, 6 or 9, at least one metal acetate, and a solvent combination that includes a diol, an alcohol amine, and water.

A photoelectric conversion device includes a photoelectric conversion element formed of a polar material and including no p-n junction, and first and second electrodes provided on the photoelectric conversion element and arranged at an interval. Space-inversion symmetry of a structure of the photoelectric conversion element is broken. The first and second electrodes are each formed of a metal material that generates no substantial potential barrier preventing majority carriers for the photoelectric conversion element from moving from the electrode to the photoelectric conversion element. Light incidence on the photoelectric conversion element without voltage application between the first and second electrodes causes electromotive force to be generated between first and second electrodes, and enables electric current to be continuously taken out from the first and second electrodes.

Disclosed herein is a polymeric film, the film comprising a polymeric matrix material, a plurality of perovskite nanocrystals and/or aggregates of perovskite nanocrystals dispersed throughout the polymeric matrix material. There is also disclosed a perovskite polymer resin composition, a perovskite-polymer resin composition, a perovskite ink and a method of forming a luminescent film using any one of the compositions or ink. Preferably, the perovskite material is a lead halide perovskite containing a cation selected from Cs, an alkylammonium ion, or a formamidinium ion. The polymeric matrix is preferably formed from monomers comprising a vinyl or an acrylate group.

The present invention relates to devices comprising metal halide perovskites and organic passivating agents. In particular, the invention relates to photovoltaic and optoelectronic devices comprising passivated metal halide perovskites. The device according to the invention comprises: (a) a metal halide perovskite; and (b) a passivating agent which is an organic compound; wherein molecules of the passivating agent are chemically bonded to anions or cations in the metal halide perovskite. The invention also provides a process for producing a photovoltaic device, which photovoltaic device comprises: (a) a metal halide perovskite; and (b) a passivating agent which is an organic compound; wherein molecules of the passivating agent are chemically bonded to anions or cations in the metal halide perovskite, wherein the process comprises treating a metal halide perovskite with a passivating agent, which passivating agent is an organic compound and is suitable for chemically bonding to anions or cations in the metal halide perovskite.

A light-emitting element includes a first electrode, a second electrode, a light-emitting layer provided between the first electrode and the second electrode and including a material having a perovskite structure, and a blocking layer provided in at least one of a position between the first electrode and the light-emitting layer or a position between the second electrode and the light-emitting layer, and configured to suppress migration of charges from the light-emitting layer.

A light-emitting element includes a first electrode, a second electrode, a light-emitting layer provided between the first electrode and the second electrode and including a material having a perovskite structure, and a blocking layer provided in at least one of a position between the first electrode and the light-emitting layer or a position between the second electrode and the light-emitting layer, and configured to suppress migration of charges from the light-emitting layer.

Discussed is a tandem solar cell manufacturing method including etching a crystalline silicon substrate, whereby a solar cell can be obtained which does not have a pyramid-shaped defect on a surface of the substrate, inhibits the generation of a shunt through the substrate having excellent surface roughness properties, and can secure fill factor properties, the solar cell being capable of being obtained through the tandem solar cell manufacturing method. The method includes preparing a crystalline silicon substrate; performing an isotropic etching process of the substrate; and removing a saw damage on a surface of the substrate by performing an anisotropic etching process of the isotropically etched substrate.