The present disclosure provides a polyoxomolybdate material and a preparation method and use thereof, a solar cell, and an organic light-emitting diode (OLED), and belongs to the technical field of optoelectronic devices. An organic solar cell (OSC) with the polyoxomolybdate material of the present disclosure as an electrode interface material has an open-circuit voltage of 0.810 V to 0.860 V, a short-circuit current density of 24.50 mA/cm.sup.2 to 26.10 mA/cm.sup.2, a fill factor of 68.7% to 78.8%, and a power conversion efficiency (PCE) of 14.21% to 17.42%. An OLED with the polyoxomolybdate material of the present disclosure has a turn-on voltage of 2.3 V to 3.5 V, a maximum brightness of 14,330 cd/m.sup.2 to 43,430 cd/m.sup.2, a current efficiency of 7.00 cd/A to 15.00 cd/A, and a power efficiency of 3.50 lm/W to 13.00 lm/W, and exhibits prominent LED performance.

A solar cell includes a first electrode, a first electron transport layer, a second electron transport layer, a photoelectric conversion layer, and a second electrode. The first electron transport layer includes carbon and a porous electron transport material.

The present invention relates to a perovskite optoelectronic device and a manufacturing method therefor. The present invention allows manufacture of a perovskite optoelectronic device with high efficiency at a low cost, as well as improving the electrical conductivity of a carbon nanotube electrode, by laying graphene oxide over conventional carbon nanotubes and may also be applied to a flexible device.

An image sensor includes a plurality of pixels including a blue pixel, a green pixel, and a red pixel. At least a portion of the plurality of pixels includes a first photo-sensing device including a first perovskite which absorbs at least a portion of light in a visible light wavelength spectrum, and a second photo-sensing device which is stacked with the first photo-sensing device and senses at least a portion of light in an infrared wavelength spectrum.

A solar cell according to the present embodiment may have a tandem structure comprising a photovoltaic part, wherein the photovoltaic part comprises: a first photovoltaic part comprising: a photovoltaic layer composed of a perovskite compound; and a second photovoltaic part comprising a semiconductor substrate. Here, in the second photovoltaic part, a first semiconductor layer and a second semiconductor layer, which are formed separately from the semiconductor substrate on one side or the other side of the semiconductor substrate, may have different structures from each other.

The disclosure provides a precursor solution, a perovskite solar cell and a preparation method thereof. The solute of the precursor solution includes a metal halide, the solvent of the precursor solution is an organic solvent, and the precursor solution contains nanobubbles, which have a diameter not more than 1000 nm, and the zeta potential of the precursor solution does not exceed −20 mV. The method of preparing the precursor solution includes: (1) preparing an organic solvent containing nanobubbles; (2) dissolving a solute in the organic solvent containing nanobubbles. The precursor solution of the disclosure has a very low zeta potential, and the nanobubbles can exist stably in the organic solvent(s) for up to one month. When comparing with traditional methods for preparing the precursor solution of the perovskite cells, the method for preparing the precursor solution of the disclosure can effectively improve the stability, reproducibility and solubility of the metal halide in the organic solvent(s).

The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

A perovskite optical element includes a light guiding unit and a luminescent layer. The light guiding unit is configured to conduct light and serves as a resonant cavity. The luminescent layer is a thin film made of perovskite material and clads the light guiding unit. The luminescent layer is configured to be excited by an excitation module to emit light. The light is conducted and output by the light guiding unit. A manufacturing method of a perovskite optical element includes preparing a dip coating solution; dipping a single crystal optical fiber in the dip coating solution for one hour, removing the single crystal optical fiber out of the dip coating solution, and drying the single crystal optical fiber; and placing the single crystal optical fiber into a tube furnace, heating the crystal optical fiber, and introducing synthetic molecules into the tube furnace.

The present invention provides quantum dot (QD)-in-matrix materials for use in blue light emitting diodes, wherein the QD-in-matrix material comprises a plurality of quantum dots embedded in a doped lead perovskite matrix.

A photoelectric conversion element module (1) includes a plurality of photoelectric conversion elements (15) formed on a light-transmitting base plate (3). The photoelectric conversion elements (15) each include a transparent conductive film (4), a first charge transport layer (5), a power-generating layer (6), and a second charge transport layer (7) stacked in order from a side corresponding to the light-transmitting base plate (3). The second charge transport layer (7) is formed of a porous film that contains a carbon material. Among two of the photoelectric conversion elements (15) that are adjacent to each other, the second charge transport layer (7) of one photoelectric conversion element and the transparent conductive film (4) of the other photoelectric conversion element are electrically connected via a first conductive adhesive layer (9), a current-collecting electrode (11), and a second conductive adhesive layer (14).