A tandem cell is provided in the present disclosure, which relates to the technical field of photovoltaics, so as to form a functional layer with high film ordering on a bottom cell, thereby improving photoelectric conversion efficiency of the tandem cell. The tandem cell includes: a bottom cell with a textured surface; a hole transport layer formed on the textured surface of the bottom cell; a second ordered induction layer and a perovskite absorption layer formed on the hole transport layer, the second ordered induction layer being located between the hole transport layer and the perovskite absorption layer; and a transparent conductive layer formed on the perovskite absorption layer. An inducing material contained in the second ordered induction layer is organic ammonium salt or inorganic lead compound. The tandem cell according to the present disclosure is a tandem cell with a perovskite solar cell as a top cell.

A tandem cell is provided in the present disclosure, which relates to the technical field of photovoltaics, so as to form a functional layer with high film ordering on a bottom cell, thereby improving photoelectric conversion efficiency of the tandem cell. The tandem cell includes: a bottom cell with a textured surface; a hole transport layer formed on the textured surface of the bottom cell; a second ordered induction layer and a perovskite absorption layer formed on the hole transport layer, the second ordered induction layer being located between the hole transport layer and the perovskite absorption layer; and a transparent conductive layer formed on the perovskite absorption layer. An inducing material contained in the second ordered induction layer is organic ammonium salt or inorganic lead compound. The tandem cell according to the present disclosure is a tandem cell with a perovskite solar cell as a top cell.

An integrated optoelectronic device includes a substrate which supports a passive waveguide for index-confining, in two transverse directions, and guiding, along a longitudinal direction, at least one optical mode. The devices further include a first charge transport layer for transporting charge carriers of a first conductivity type, a second charge transport layer for transporting charge carriers of a second conductivity type, opposite to the first conductivity type, and an active layer comprising a particulate film of solution-processable semiconductor nanocrystals. The active layer is arranged relative to the charge transport layers to form a diode junction. The active layer and the first and the second charge transport layer are further formed on the substrate such that they each overlap at least a portion of the waveguide in a cross-section perpendicular to the longitudinal direction. The active layer is evanescently coupled to the waveguide.

An integrated optoelectronic device includes a substrate which supports a passive waveguide for index-confining, in two transverse directions, and guiding, along a longitudinal direction, at least one optical mode. The devices further include a first charge transport layer for transporting charge carriers of a first conductivity type, a second charge transport layer for transporting charge carriers of a second conductivity type, opposite to the first conductivity type, and an active layer comprising a particulate film of solution-processable semiconductor nanocrystals. The active layer is arranged relative to the charge transport layers to form a diode junction. The active layer and the first and the second charge transport layer are further formed on the substrate such that they each overlap at least a portion of the waveguide in a cross-section perpendicular to the longitudinal direction. The active layer is evanescently coupled to the waveguide.

The present disclosure relates to an organic light-emitting diode. The organic light-emitting diode includes a substrate, an anode layer, an organic functional layer, a cathode layer, and a cover layer that are sequentially stacked from bottom to top.

The present disclosure relates to an organic light-emitting diode. The organic light-emitting diode includes a substrate, an anode layer, an organic functional layer, a cathode layer, and a cover layer that are sequentially stacked from bottom to top.

An organic hole transport material according to an embodiment of the present disclosure is an organic hole transport material doped with an acid-base adduct, in which the acid-base adduct is formed by an acid-base reaction involving an acid and a base, and the acid contains hydrogen ions (H.sup.+) and has the formula H.sup.+X.sup.−, where H.sup.+ corresponds to a hydrogen ion, and X.sup.− corresponds to an anion and corresponds to TFSI.sup.−.

An organic hole transport material according to an embodiment of the present disclosure is an organic hole transport material doped with an acid-base adduct, in which the acid-base adduct is formed by an acid-base reaction involving an acid and a base, and the acid contains hydrogen ions (H.sup.+) and has the formula H.sup.+X.sup.−, where H.sup.+ corresponds to a hydrogen ion, and X.sup.− corresponds to an anion and corresponds to TFSI.sup.−.

A core-shell particle which includes a core-shell structure includes an inorganic nanoparticle having a light wavelength conversion ability and a coating layer formed on a surface of the inorganic nanoparticle and formed of an inorganic perovskite type substance.

The present application provides a method for preparing a perovskite film, and a related perovskite film, solar cell and solar cell device thereof. The preparation method may include the steps of (1) providing a target material comprising the following elements: lead, a halogen, and one or more alkali metals; (2) sputtering using the target material in step (1), where a process gas is a noble gas, optionally, argon, so as to obtain a film; (3) subjecting the film obtained in step (2) to a chemical bath treatment, wherein the chemical bath is a solution of AX, A is selected from one or more of formamidine or methylamine, and X is a halogen; and (4) sputtering on the film obtained in step (3) using a tin metal, where a process gas comprises a noble gas, optionally, a mixture of argon and a halogen gas, so as to obtain the perovskite film.