The invention discloses color conversion film which, upon ex-citation by blue light, emits green and red light. The films comprise at least one red light emitting layer, one green light emitting layer and sandwiched in between at least one separation layer.

A perovskite optical element includes a light guiding unit and a luminescent layer. The light guiding unit is configured to conduct light and serves as a resonant cavity. The luminescent layer is a thin film made of perovskite material and clads the light guiding unit. The luminescent layer is configured to be excited by an excitation module to emit light. The light is conducted and output by the light guiding unit. A manufacturing method of a perovskite optical element includes preparing a dip coating solution; dipping a single crystal optical fiber in the dip coating solution for one hour, removing the single crystal optical fiber out of the dip coating solution, and drying the single crystal optical fiber; and placing the single crystal optical fiber into a tube furnace, heating the crystal optical fiber, and introducing synthetic molecules into the tube furnace.

Described herein are solar cells, comprising: an active layer comprising a perovskite composition, wherein the perovskite composition comprises lead; and, a lead-absorbing material. In certain embodiments, the lead-absorbing material is an ion exchange material. The lead absorbing material helps prevent lead leakage in damaged solar cells and solar modules under severe weather conditions.

Described herein are solar cells, comprising: an active layer comprising a perovskite composition, wherein the perovskite composition comprises lead; and, a lead-absorbing material. In certain embodiments, the lead-absorbing material is an ion exchange material. The lead absorbing material helps prevent lead leakage in damaged solar cells and solar modules under severe weather conditions.

Provided is a perovskite film including crystal grains with a crystalline structure of [A][B][X].sub.3.n[C], wherein [A], [B], [X], [C] and n are as defined in the specification.

The present disclosure further provides a precursor composition of perovskite film, method for producing of perovskite film, and semiconductor element including such films, as described above. With the optimal lattice arrangement, the perovskite film shows the effects of small surface roughness, and the semiconductor element thereof can thus achieve high efficiency and stability even with large area of film formation, thereby indeed having prospect of the application.

Methods of encapsulating perovskites, such as metal halide perovskites, that may include depositing a nitride or an oxide on a film that includes a perovskite. Composite materials that include a perovskite layer and a layer of a nitride or an oxide. Devices, such as electronic devices, that include composite materials.

A perovskite radiovoltaic-photovoltaic battery having a first electrode, a first charge transport layer, a perovskite layer, a second charge transport layer, and a second electrode in sequence, wherein the first electrode is a transparent electrode, the first charge transport layer is an electron transport layer and the second charge transport layer is a hole transport layer, or the first charge transport layer is a hole transport layer and the second charge transport layer is an electron transport layer, and the second electrode is a radiating electrode formed by compounding an electrical conductor material with a radioactive source.

A perovskite radiovoltaic-photovoltaic battery having a first electrode, a first charge transport layer, a perovskite layer, a second charge transport layer, and a second electrode in sequence, wherein the first electrode is a transparent electrode, the first charge transport layer is an electron transport layer and the second charge transport layer is a hole transport layer, or the first charge transport layer is a hole transport layer and the second charge transport layer is an electron transport layer, and the second electrode is a radiating electrode formed by compounding an electrical conductor material with a radioactive source.

A method for preparing a perovskite cell with multiple hole transport layers is described. The method includes a process of forming the multiple hole transport layers, where the process of forming the multiple hole transport layers includes the following steps: (1) sputtering a nickel oxide target material in a first atmosphere to form a first hole transport layer, where the first atmosphere contains argon and oxygen, and a volume ratio of the argon to the oxygen is approximately 0:1 to 1.5: 1; (2) performing annealing treatment on the first hole transport layer; and (3) sputtering the nickel oxide target material onto the first hole transport layer subjected to the annealing treatment in a second atmosphere to form a second hole transport layer, where the second atmosphere contains argon-containing gas and oxygen. A perovskite cell (100) with multiple hole transport layers prepared by using the above method is described.

Ge-centered octahedral perovskites have heretofore not been achievable due to collapse of the perovskite structure into non-octahedral units due to a lack of B site support from the small-radius Ge atom, which breaks Goldschmidt’s rules for constructing octahedral perovskites. To overcome this shortcoming, a strategy was developed to form a strong cage with the A sites in which the octahedron is forced to remain intact. Strong intermolecular interaction between the organic A site cations were used to stabilize the symmetric Ge octahedral perovskite beyond the Goldschmidt’s rules. The molecules used based on Y-PMA (Y: F, Cl, Br, I) that facilitated strong halogen bonding to form the cage around the octahedral. Octahedral Ge perovskites exhibit a direct bandgap in contrast to the indirect bandgap of non-octahedral Ge perovskites are demonstrated. In addition, the octahedral Ge perovskite exhibited a dramatic increase in the carrier mobility. A photodetector made with the stabilized octahedral perovskite material exhibited a vastly better responsivity than non-octahedral Ge perovskites.