The present invention provides a compound, an organic electroluminescence material, an organic electroluminescence element and an electronic device. When the compound is used as the material of the organic functional layers, it makes the element have a lower driving voltage, a higher current efficiency and a longer service life.

The present disclosure relates to an organic electroluminescent compound, and an organic electroluminescent device comprising the same. By comprising the organic electroluminescent compound according to the present disclosure, it is possible to provide an organic electroluminescent device having improved current efficiency and/or lifetime properties.

A compound for an organic optoelectronic device, an organic optoelectronic device including the same, and a display device, the compound being represented by Chemical Formula I:

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The present disclosure relates to a plurality of host materials comprising at least one first host compound and at least one second host compound, and an organic electroluminescent device comprising the same. By comprising a specific combination of compounds according to the present disclosure as host materials, an organic electroluminescent device having a low driving voltage, high luminous efficiency, and long lifespan characteristics can be provided.

A light emitting element includes a first electrode, a hole transport region disposed on the first electrode, an emission layer disposed on the hole transport region, an electron transport region disposed on the emission layer, and a second electrode disposed on the electron transport region, wherein the hole transport region includes a first hole transport layer disposed adjacent to the first electrode and including a first amine compound having a first refractive index, a second hole transport layer disposed between the first hole transport layer and the emission layer, and including a second amine compound having a second refractive index greater than the first refractive index, and a third hole transport layer disposed between the second hole transport layer and the emission layer, and including a third amine compound having a third refractive index less than the second refractive index, thereby having high luminous efficiency.

A light emitting element according to an embodiment includes a first electrode, a second electrode disposed on the first electrode, an emission layer disposed between the first electrode and the second electrode, and a double buffer layer including a first layer disposed on the emission layer and a second layer disposed on the first layer. The first layer includes a first compound, the second layer includes a second compound which is different from the first compound, and the first compound and the second compound are each independently represented by Formula 1 or Formula 2, thereby contributing to increased efficiency and increased life of a light emitting element.

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Provided is a light emitting device including a first electrode, a second electrode, and at least one functional layer disposed between the first electrode and the second electrode, and the at least one functional layer may include an amine compound represented by Formula E, thereby exhibiting high luminous efficiency and improved service life characteristics.

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An organic light emitting diode includes a first electrode; a second electrode facing the first electrode; and a first emitting material layer including a first compound and a second compound and positioned between the first and second electrodes. The emission spectrum of the first compound and the absorption spectrum of the second compound has a relatively large overlapping ratio. An organic light emitting device includes the organic light emitting diode and can be a display device or a lighting device.

The present invention is a structure of a photodiode, which comprises a substrate; a first electrode is arranged on the substrate; a first transport layer is arranged on the first electrode; a photoactive layer is arranged on the first transport layer, the photoactive layer includes a P-type semiconductor layer and an N-type semiconductor layer. The P-type semiconductor layer and the N-type semiconductor layer have a composition ratio between 1:0.5 and 1:1.5. The photoactive layer has a thickness ranging from 1 μm to 15 m, the photoactive layer has a first energy gap value, and a second electrode is disposed on the photoactive layer.

A light emitting device of an embodiment includes a first electrode, a second electrode oppositely disposed to the first electrode, and an emission layer disposed between the first electrode and the second electrode. The emission layer includes a first host represented by Formula H-1, a second host represented by Formula H-2, and a first dopant represented by Formula 1, wherein Formulas H-1, H-2, and 1 are explained in the specification. The light emitting device shows improved emission efficiency properties.