A conjugated polymer comprising a first repeat unit substituted with at least three ionic groups.

A crosslinked self-assembled monolayer (SAM), comprising surface groups containing a nitrogen-heterocycle, was formed on an oxygen plasma-treated silicon oxide or hafnium oxide top surface of a substrate. The SAM is covalently bound to the underlying oxide layer. The SAM was patterned by direct write methods using ultraviolet (UV) light of wavelength 193 nm or an electron beam, forming a line-space pattern comprising non-exposed SAM features. The non-exposed SAM features non-covalently bound DNA-wrapped carbon nanotubes (DNA-CNT) deposited from aqueous solution with a selective placement efficiency of about 90%. Good alignment of carbon nanotubes to the long axis of the SAM features was also observed. The resulting patterned biopolymer features were used to prepare a CNT based field effect transistor.

A method and device for carrying out a chemical reaction, by supplying to the chemical reaction energy from an electron- and, optionally, photon-containing energy wave that is induced in one or more aggregated molecular ensembles, wherein the emission of which is stimulated from the ensembles. Emission is stimulated from the ensembles by a wide variety of energy inputs, and energy derived from this electron and/or photon energy wave is advantageously used as an energy source to assist chemical reduction reactions.

The present disclosure discloses a method of patterning a quantum dot layer, a method of manufacturing a quantum dot light emitting device, and a quantum dot light emitting device. The patterning method includes the steps of: forming on a substrate a layer of film comprising a photosensitive material; irradiating a first preset region of the layer of film with light having a preset wavelength; forming a first quantum dot layer, wherein the photosensitive material in the first preset region of the layer of film is combined with a first quantum dot in the first quantum dot layer; and removing a first quantum dot in the first quantum dot layer that is not combined with the photosensitive material.

The present invention relates to a method comprising the steps of: culturing benthic pennate diatoms in an industrial biofilm process, wherein in said industrial biofilm process said benthic pennate diatoms are growing on at least one surface in a water-comprising compartment and wherein said benthic pennate diatoms forms a biofilm on said at least one surface; harvesting said benthic pennate diatoms from said at least one surface; and extracting said frustules by separating said frustules from organic biomass comprised in said benthic pennate diatoms.

In a first aspect of the present disclosure, there is provided a nonvolatile memory device comprising: two electrodes; and a protein switching layer interposed between the two electrodes and including an amino acid, wherein then a voltage is applied to one of the electrodes, the amino acid chelates with an active electrode material to form a conductive filament, wherein the formation of the conductive filament allows a resistance state of the device to vary.

In one aspect, a method for placing carbon nanotubes on a dielectric includes: using DSA of a block copolymer to create a pattern in the placement guide layer on the dielectric which includes multiple trenches in the placement guide layer, wherein there is a first charge on sidewall and top surfaces of the trenches and a second charge on bottom surfaces of the trenches, and wherein the first charge is different from the second charge; and depositing a carbon nanotube solution onto the dielectric, wherein self-assembly of the deposited carbon nanotubes within the trenches occurs based on i) attractive forces between the first charge on the surfaces of the carbon nanotubes and the second charge on the bottom surfaces of the trenches and ii) repulsive forces between the first charge on the surfaces of the carbon nanotubes and the first charge on sidewall and top surfaces of the trenches.

The present disclosure relates to an organic light emitting device including: a first electrode; a second electrode provided to face the first electrode; and an electron transport layer, an emitting layer and a hole transport layer provided between the first electrode and the second electrode, and the emitting layer contains doped protein quantum dots.

An optoelectronic device comprises a nanocomposite comprising a carbon nanostructure having a surface and a biomolecule adsorbed on the surface and forming a heterojunction at the interface of the carbon nanostructure and the biomolecule, the carbon nanostructure and the biomolecule each characterized by respective conduction band edges and valence band edges. The device further comprises first and second electrodes in electrical communication with the nanocomposite. The conduction band edge offset, the valence band edge offset, or both, across the heterojunction is greater in energy than the binding energy of an exciton generated in the carbon nanostructure or the biomolecule upon the absorption of light such that the exciton dissociates at the heterojunction to an electron, which is injected into one of the carbon nanostructure and the biomolecule, and a hole, which is injected into the other of the carbon nanostructure and the biomolecule.

A carbon nanotube thin film transistor and a manufacturing method thereof are provided in the embodiments of the present disclosure. The carbon nanotube thin film transistor includes: a base substrate; a gate electrode, a semiconductor layer, a source electrode and a drain electrode, which are disposed on the base substrate, the semiconductor layer includes a poly(3-hexylthiophene) layer and a mixing layer of semiconducting carbon nanotube and poly(3-hexylthiophene) which are stacked. The semiconducting carbon nanotube thin film transistor has a high purity, thus the metallic carbon nanotubes are substantially cleared out and the electrical property of the thin film transistor is ensured, so that the manufactured carbon nanotube thin film transistor has good electrical properties.