A light-emitting element includes a first electrode, a second electrode, a light-emitting layer, a hole injection layer provided between the first electrode and the light-emitting layer, and a hole transport layer provided between the hole injection layer and the light-emitting layer, wherein an insulator layer is provided between the hole injection layer and the hole transport layer. The hole injection layer, the insulator layer, and the hole transport layer each include a compound including one or more types of a cation and one or more types of an anion, the anion includes a group 15 or group 16 element of the periodic table, and an average oxidation number of cations in the insulator layer is greater than an average oxidation number of cations in the hole transport layer and less than an average oxidation number of cations in the hole injection layer.

A novel light-emitting device that is highly convenient, useful, or reliable is provided. A light-emitting device including a second electrode over a first electrode with an EL layer sandwiched therebetween is provided. The EL layer includes a light-emitting layer and an oxidation-resistant layer over the light-emitting layer. The EL layer includes a side surface. The light-emitting device includes a block layer in contact with a top surface and the side surface of the EL layer. The second electrode is in contact with the side surface of the EL layer through the block layer. The oxidation-resistant layer includes any one or a plurality of oxides of metals belonging to Group 4 to Group 8 of the periodic table and an organic compound having an electron-withdrawing group.

Provided is a display device and a manufacturing method thereof. More specifically, the present invention relates to a display device including a nickel oxide thin film co-doped with a copper monovalent cation and a copper divalent cation, and a manufacturing method thereof. The present invention provides a display device including a substrate, a first electrode layer disposed on the substrate, a first common layer disposed on the substrate, a light emitting layer disposed on the first common layer, a second common layer disposed on the light emitting layer, and a second electrode layer disposed on the second common layer, wherein the first common layer includes a nickel oxide thin film co-doped with a first metal cation and a second metal cation, and the oxidation number of the first metal cation and the oxidation number the second metal cation are different from each other.

A manufacturing method of an OLED anode and display device are provided, which the former method comprises the steps: forming an anode-film layer, a material is an ITO, on a substrate; forming a photoresist-film layer on the anode-film layer; patterning the photoresist-film layer to acquire a photoresist-mask pattern, which comprises: an area of photoresist full-retention, photoresist half-retention, and a photoresist full-removal, wherein the photoresist area of half-retention is located between the full-retention and the full-removal; etching the anode film layer to acquire an anode pattern; removing the photoresist half-retention area; perform a plasma treatment to a portion of the anode pattern outside the photoresist full-retention area by adopting a first gas, comprising at least one of O.sub.2, N.sub.2O, CF.sub.4, Ar; removing the photoresist-mask pattern. The disclosure increases the small thickness portion of brightness to compensate for the display unevenness caused by the thickness difference and improve the display quality.

Provided is a display device and a manufacturing method thereof. More specifically, the present invention relates to a display device including a nickel oxide thin film co-doped with a copper monovalent cation and a copper divalent cation, and a manufacturing method thereof. The present invention provides a display device including a substrate, a first electrode layer disposed on the substrate, a first common layer disposed on the substrate, a light emitting layer disposed on the first common layer, a second common layer disposed on the light emitting layer, and a second electrode layer disposed on the second common layer, wherein the first common layer includes a nickel oxide thin film co-doped with a first metal cation and a second metal cation, and the oxidation number of the first metal cation and the oxidation number the second metal cation are different from each other.

A manufacturing method of an OLED anode and display device are provided, which the former method comprises the steps: forming an anode-film layer, a material is an ITO, on a substrate; forming a photoresist-film layer on the anode-film layer; patterning the photoresist-film layer to acquire a photoresist-mask pattern, which comprises: an area of photoresist full-retention, photoresist half-retention, and a photoresist full-removal, wherein the photoresist area of half-retention is located between the full-retention and the full-removal; etching the anode film layer to acquire an anode pattern; removing the photoresist half-retention area; perform a plasma treatment to a portion of the anode pattern outside the photoresist full-retention area by adopting a first gas, comprising at least one of O.sub.2, N.sub.2O, CF.sub.4, Ar; removing the photoresist-mask pattern. The disclosure increases the small thickness portion of brightness to compensate for the display unevenness caused by the thickness difference and improve the display quality.

The present invention relates to an organic electroluminescent device comprising an anode, a cathode, an emission layer, an undoped electron transport layer comprising a first matrix compound, and an electron injection layer comprising a second matrix compound and an alkali organic complex and/or alkali halide, wherein the undoped electron transport layer and the electron injection layer are arranged between the emission layer and the cathode, wherein the reduction potential of the first matrix compound is less negative than, the reduction potential of 9,10-di(naphthalen-2-yl)anthracene and more negative than the reduction potential of 4,4-bis(4,6-diphenyl-1,3,5-triazin-2-yl)biphenyl, wherein the reduction potential in both cases is measured against Fc/Fc.sup.+ in tetrahydrofurane; and the dipole moment of the first matrix compound is selected ?0 Debye and ?2.5 Debye and the dipole moment of the second matrix compound is selected >2.5 and <10 Debye.

Disclosed are a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. The semiconductor layer overlaps the gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer. The semiconductor layer includes a first semiconductor layer including a first organic semiconductor material and a second semiconductor layer including a second organic semiconductor material. The second semiconductor layer is farther spaced apart from the gate electrode than the first semiconductor layer. A HOMO energy level of the second organic semiconductor material is different from a HOMO energy level of the first organic semiconductor material. A method of manufacturing the thin film transistor is disclosed.

Provided are processes for preparing an electrically doped semiconducting material that includes a [3]-radialene p-dopant. Also provided are processes for preparing an electronic device containing a layer that includes a [3]-radialene p-dopant. The processes may include (i) loading an evaporation source with a [3]-radialene p-dopant and (ii) evaporating the [3]-radialene p-dopant at an elevated temperature and at a reduced pressure. The [3]-radialene p-dopant may be selected from compounds having a structure according to formula (I) herein.

Provided is an organic light emitting element including: an anode; a cathode; and an organic compound layer formed between the anode and the cathode and including a hole injection layer, a hole transport layer, and an emission layer, in which: the emission layer includes a host and a dopant; the hole transport layer includes a hole transport material having multiple aromatic hydrocarbon skeletons and a single bond for linking the aromatic hydrocarbon skeletons; the hole transport material has a triplet level T.sub.1 of 1.8 eV or more; the hole transport material has a hole mobility of 110.sup.5 cm.sup.2/Vs or more; and the hole transport layer and the emission layer satisfy relationships represented by the following expression (1):

|reduction potential of hole transport material||reduction potential of host|>0.1 V(1)

and the following expression (2):

|HOMO level of hole transport materialHOMO level of host|<0.1 eV(2).