The present invention provides a QD material, a preparation method, and a semiconductor device. The QD material includes a number of N QD structural units arranged sequentially along a radial direction of the QD material, where N?1. Each QD structural unit has a gradient alloy composition structure with an energy level width increasing along the radial direction from the center to the surface of the QD material. Moreover, the energy level widths of adjacent QD structural units are continuous. The present invention provides a QD material having a gradient alloy composition along the radial direction from the center to the surface. The disclosed QD material not only achieves higher QD light-emitting efficiency, but also meets the comprehensive requirements of semiconductor devices and corresponding display technologies on QD materials. Therefore, the disclosed QD material is a desired QD light-emitting material suitable for semiconductor devices and display technologies.

An organic light-emitting display panel including: an array substrate, an organic light-emitting element placed on the array substrate and comprising light-emitting pixels, and an encapsulation layer placed on a side of the organic light-emitting element away from the array substrate; the encapsulation layer comprises a first inorganic encapsulation layer having a thickness 10 nm?100 nm, a first interlayer bonding layer, and a first organic encapsulation layer along a direction away from the array substrate; refractive indexes of the first inorganic encapsulation layer, the first interlayer bonding layer, and the first organic encapsulation layer are n1, n2 and n3, respectively; the refractive index n2 decreases in gradient along a direction from the first inorganic encapsulation layer toward the first organic encapsulation layer, maximum and minimum refractive indexes of the first interlayer bonding layer are n21 and n22, respectively; n21>n1, n22<n3.

The present disclosure provides a quantum dot electroluminescent device, which includes: a substrate; an anode disposed on the substrate; a hole transmission layer disposed on the anode; a quantum dot luminescent layer disposed on the hole transmission layer; an electron transmission layer disposed on the quantum dot luminescent layer; and a cathode disposed on the electron transmission layer, wherein the hole transmission layer is a P-type doped hole transmission layer and/or the electron transmission layer is a N-type doped electron transmission layer. The present disclosure further provides a method of manufacturing the quantum dot electroluminescent device. The present disclosure causes degrees of curvature of interfacial energy bands to be different by forming a gradient doping effect in a multi-layer hole transmission layer, so as to form a gradient energy level, that is, the HOMO energy level deepens in order from the anode to the quantum dot luminescent layer, thereby reducing the energy barrier of the holes being injected from the anode to the quantum dot luminescent layer to improve the luminescent efficiency of the device.

The present disclosure provides a method for manufacturing a flexible base plate of an OLED display panel, comprising following steps: a step S10 of providing a glass substrate; a step S20 of forming a first polyimide layer on the surface of the glass substrate; and a step S30 of forming a buffer layer on a surface of the first polyimide layer; wherein the step S30 comprises: a step S301 of forming a silicon oxide layer on a surface of the first polyimide layer; and a step S302 of using ion implantation to implant a plurality of titanium ions into the silicon oxide layer for forming a mixed layer of titanium dioxide and silicon oxide.

A method of manufacturing a light emitting device includes providing a substrate, forming a plurality of photosensitive bumps over the substrate, forming a photosensitive layer over the plurality of photosensitive bumps, forming a buffer layer between the photosensitive layer and the plurality of photosensitive bumps, patterning the photosensitive layer to form a recess through the photosensitive layer to expose a surface, disposing an organic emissive layer on the surface, forming a metal containing layer over the organic emissive layer, and removing the patterned photosensitive layer.

The invention relates to a method for producing an organic light-emitting diode (1) comprising the following steps: providing a carrier (3) for the organic light-emitting diode (1), applying a solution (S) comprising a plurality of different emitter materials (E) to the carrier (1), wherein said emitter materials (E) are each formed by a certain type of organic molecule and have electrical charges that differ from each other, applying an electrical field (F), so that the solution is located in the electrical field (F), and drying the solution (S) into a plurality of emitter layers (20) in an organic layer stack (2), while the electrical field is applied, so that the emitter materials (E) are accommodated separately from each other, each in a certain emitter layer (20) of the organic stack (2).

The present invention provides a QD material, a preparation method, and a semiconductor device. The QD material includes at least one QD structural unit arranged sequentially along a radial direction of the QD material. Each QD structural unit has a gradient alloy composition structure with a changing energy level width along the radial direction or a homogeneous alloy composition structure with a constant energy level width along the radial direction. The disclosed QD material not only achieves higher light-emission efficiency of QD material, but also meets the comprehensive requirements of semiconductor devices and the corresponding display technologies on QD materials. Therefore, the disclosed QD material is a desired QD light-emitting material suitable for semiconductor devices and display technologies.

An electrically conductive film suited to use as a transparent anode, a method of forming the film, and an electronic device comprising the film are disclosed. The device includes a conductive polymer electrode defining first and second surfaces and having an electrical conductivity gradient between the first and second surfaces. A second electrode is spaced from the second surface by at least one organic material layer, such as a light emitting layer.

The present application discloses an organic light emitting diode base substrate including a support substrate and a light outcoupling layer on the support substrate for enhancing light outcoupling efficiency of an organic light emitting display substrate, the light outcoupling layer having a corrugated surface on a side of the light outcoupling layer distal to the support substrate. The light outcoupling layer including a polymer material having a gradient distribution in a direction from the corrugated surface to the support substrate.

A light-emitting element includes: a first electrode; a second electrode; a light-emitting layer positioned between the first electrode and the second electrode, and containing quantum dots and a first hole transport material; and a hole transport layer positioned between the first electrode and the light emitting layer, and containing a second hole transport material solubility of which to a solvent in which the quantum dots are soluble is lower than solubility of the first hole transport material. A difference in ionization potential between the second hole transport material and the first hole transport material is smaller than a difference in ionization potential between the second hole transport material and the quantum dots.