The organic EL display panel includes: a substrate; and an organic electroluminescent element disposed on the substrate, the organic electroluminescent element including, in the given order: an anode; a light-emitting layer; and a cathode, the light-emitting layer including multiple light-emitting portions, the multiple light-emitting portions each providing a luminescent color different from the luminescent color of the adjacent light-emitting portion, the multiple light-emitting portions each containing a luminescent dopant material, the concentration of the luminescent dopant material in each light-emitting portion changing in the thickness direction of the light-emitting portion and being at a local maximum in the vicinity of a first interface on the anode side and in the vicinity of a second interface on the cathode side, the local maximum in each light-emitting portion being 20% by weight or higher of the total weight of the light-emitting portion.

A light emitting device including a first electrode, a light emitting portion on the first electrode, the light emitting portion including a plurality of light emitting units and at least one interconnecting layer between ones of the light emitting units that are adjacent to each other, and a second electrode on the light emitting portion. The at least one interconnecting layer includes a p-type charge generation layer doped with a p-type dopant and an n-type charge generation layer doped with an n-type dopant. At least one of the p-type charge generation layer and the n-type charge generation layer has a concentration gradient of the p-type dopant or the n-type dopant.

A light-emitting element with high emission efficiency. The light-emitting element includes a first organic compound, a second organic compound, and a guest material. The LUMO level of the first organic compound is lower than the LUMO level of the second organic compound. The HOMO level of the first organic compound is lower than the HOMO level of the second organic compound. The HOMO level of the guest material is higher than the HOMO level of the second organic compound. The energy difference between the LUMO level of the guest material and the HOMO level of the guest material is larger than the energy difference between the LUMO level of the first organic compound and the HOMO level of the second organic compound. The guest material has a function of converting triplet excitation energy into light emission. The first organic compound and the second organic compound form an exciplex.

An organic light-emitting device, including: an anode and a cathode opposite each other, a first stack and a second stack between the anode and the cathode, and a charge generation layer between the first stack and the second stack, the charge generation layer including an n-type charge generation layer and a p-type charge generation layer, wherein the p-type charge generation layer includes one first organic material, wherein the n-type charge generation layer includes a second organic material and an n-type dopant, wherein the n-type charge generation layer is divided into a first region contacting the first stack, a second region contacting the p-type charge generation layer, and a third region between the first region and the second region, and wherein a dopant content of the n-type dopant is stepwise increased in an order of: the first region, the third region, and the second region.

An organic light-emitting device includes a lower electrode, an upper electrode, and an organic layer disposed between these electrodes. The organic layer is a laminate of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer. The light-emitting layer includes a host and a first dopant. The hole transport layer includes a hole transporting material, and the electron transport layer includes an electron transporting material. The hole transporting material and the electron transporting material have functional groups. The first dopant in the light-emitting layer has a functional group, and is concentrated on the side of the light-emitting layer in contact with the hole transport layer or the electron transport layer.

The present application discloses an organic light emitting diode base substrate including a support substrate and a light outcoupling layer on the support substrate for enhancing light outcoupling efficiency of an organic light emitting display substrate, the light outcoupling layer having a corrugated surface on a side of the light outcoupling layer distal to the support substrate. The light outcoupling layer including a polymer material having a gradient distribution in a direction from the corrugated surface to the support substrate.

A vertical fin field effect transistor including a doped region in a substrate, wherein the doped region has the same crystal orientation as the substrate, a first portion of a vertical fin on the doped region, wherein the first portion of the vertical fin has the same crystal orientation as the substrate and a first portion width, a second portion of the vertical fin on the first portion of the vertical fin, wherein the second portion of the vertical fin has the same crystal orientation as the first portion of the vertical fin, and the second portion of the vertical fin has a second portion width less than the first portion width, a gate structure on the second portion of the vertical fin, and a source/drain region on the top of the second portion of the vertical fin.

A vertical fin field effect transistor including a doped region in a substrate, wherein the doped region has the same crystal orientation as the substrate, a first portion of a vertical fin on the doped region, wherein the first portion of the vertical fin has the same crystal orientation as the substrate and a first portion width, a second portion of the vertical fin on the first portion of the vertical fin, wherein the second portion of the vertical fin has the same crystal orientation as the first portion of the vertical fin, and the second portion of the vertical fin has a second portion width less than the first portion width, a gate structure on the second portion of the vertical fin, and a source/drain region on the top of the second portion of the vertical fin.

A vertical fin field effect transistor including a doped region in a substrate, wherein the doped region has the same crystal orientation as the substrate, a first portion of a vertical fin on the doped region, wherein the first portion of the vertical fin has the same crystal orientation as the substrate and a first portion width, a second portion of the vertical fin on the first portion of the vertical fin, wherein the second portion of the vertical fin has the same crystal orientation as the first portion of the vertical fin, and the second portion of the vertical fin has a second portion width less than the first portion width, a gate structure on the second portion of the vertical fin, and a source/drain region on the top of the second portion of the vertical fin.

The present invention provides an organic emitting diode including a first electrode; a second electrode facing the first electrode; an emitting material layer between the first and second electrodes; and an intervening layer between the emitting material layer and the second electrode and including a base material and an electron injection material, wherein the intervening layer contacts the second electrode.