The disclosure discloses a lampshade and a lamp. The lampshade includes a lampshade body and a transparent display device arranged on the lampshade body; wherein at least a part of the lampshade body forms a light emitting area; and the transparent display device includes a transparent display panel arranged in the light emitting area, and a control mainboard configured to control the transparent display panel to display an image.

Provided is a display apparatus comprising a substrate including emission areas and a sensing area, organic light-emitting diodes corresponding to the emission areas, and a photo detector disposed on the substrate and overlapping the sensing area, wherein each organic light-emitting diode includes a pixel electrode, a lower emission layer disposed on the pixel electrode, an upper emission layer disposed on the lower emission layer, and an opposite electrode disposed on the upper emission layer, and the photo detector includes a pixel electrode, an active layer disposed on the pixel electrode, and an opposite electrode disposed on the active layer.

A lighting device includes a substrate including a display area and a non-display area and an organic light emitting layer disposed in the display area. A first electrode is disposed on the organic light emitting layer and a second electrode is disposed below the organic light emitting layer. A phase change material layer is disposed below the second electrode and a plurality of third electrodes is disposed between the substrate and the phase change material layer. Therefore, a pattern having various colors of light and various shapes may be implemented based on a shape of the plurality of third electrodes, a phase change of the phase change material layer, and a color of light emitted from the organic light emitting layer.

An organic light-emitting device having low-driving voltage, improved efficiency, and long lifespan includes: a first electrode; a second electrode facing the first electrode; a first layer between the first electrode and the second electrode, the first layer including a first compound; a second layer between the first layer and the second electrode, the second layer including a second compound; and a third layer between the second layer and the second electrode, the third layer including a third compound; wherein the first compound does not include a nitrogen-containing heterocyclic group comprising *?N* as a ring forming moiety, and wherein the first compound, the second compound, and the third compound each independently include at least one group selected from groups represented by Formulae A to C:

##STR00001##

A hybrid light emitting device, a display panel, and a display device are disclosed. The hybrid light emitting device comprises a first electrode, a light emitting material composite layer, a hybrid connecting composite layer, a first light emitting layer, and a second electrode which are stacked in this order. The first electrode and second electrode are configured to provide a first carrier and a second carrier during operation, respectively. The hybrid connecting composite layer comprises at least two hybrid connecting layers. In a direction from the first electrode to the second electrode, the at least two hybrid connecting layers increase in term of the first carrier mobility and decrease in term of the second carrier mobility.

The embodiments of the present disclosure relate to display technology and provide a pixel driving circuit and an associated driving method, a display panel and a display apparatus, capable of avoiding influence of a drifting threshold voltage of a driving transistor on a driving current of an active light emitting device. The pixel driving circuit comprises a compensating unit, a data writing unit, a driving unit, a first energy storage unit, a second energy storage unit and a display unit. The embodiments of the present disclosure are applicable to display manufacture.

A compound is represented by the following formula (1). In the formula (1), Ar is a substituted or unsubstituted aryl group including 6 to 30 ring carbon atoms, R.sup.a are independently a substituted or unsubstituted alkyl group including 1 to 15 carbon atoms, or a substituted or unsubstituted cycloalkyl group including 3 to 15 carbon atoms, R.sup.b1 to R.sup.b4 are independently a halogen atom, a cyano group, a substituted or unsubstituted alkyl group including 1 to 15 carbon atoms, or the like, R.sup.c1 to R.sup.c10 are independently a hydrogen atom, a halogen atom, a cyano group, a substituted or unsubstituted alkyl group including 1 to 15 carbon atoms, or the like, * is a bonding position at which one of R.sup.c1 to R.sup.c10 is bonded to either nitrogen atom, x is an integer from 0 to 3, y is an integer from 0 to 4, and z are independently an integer from 0 to 5.

##STR00001##

The invention relates to an optoelectronic component, the optoelectronic component comprises a light-emitting layer stack, and an electrothermal protection element, which is connected to the layer stack in the component and has a temperature-dependent resistor.

The disclosure provides a compound, a composition, and an organic electronic device. The compound is represented by formula (1):

##STR00001##

Ar.sub.1 is selected from an aromatic group containing 6 to 18 ring atoms and a heteroaromatic group containing 6 to 13 ring atoms; Ar.sub.2 is selected from an aromatic group containing 6 to 14 ring atoms and a heteroaromatic group containing 13 to 19 ring atoms; L.sub.1 and L.sub.2 are each independently selected from a single bond and a group containing 6 ring atoms; R.sub.1 and R.sub.2 are each independently selected from -D, a C.sub.4 alkyl group, an aromatic group containing 6 to 10 ring atoms, and a heteroaromatic group containing 12 ring atoms; m1 is 0, 2, or 8, and m2 is 0 or 1.

The invention provides a manufacturing method for TFT backplane, through forming an oxygen-containing a-Si layer on the buffer layer and an oxygen-free a-Si layer on the oxygen-containing a-Si layer so that when using a boron induced SPC to crystallize the a-Si thin film, the contact interface between the a-Si thin film and the buffer layer is the oxygen-containing a-Si layer; because the nucleation is not easy to occur in oxygen-containing a-Si layer during high temperature crystallization, the nucleation only occurs top-down in the boron doped layer on the upper surface of the a-Si thin film for good die quality and thin film uniformity to achieve improve crystalline quality and uniformity. The TFT backplane provided by the invention is made with simple process, wherein the crystalline quality and uniformity of the polysilicon layer is preferable, and can enhance the TFT performance and the driving effect.