An apparatus and method perform supersonic cold-spraying to deposit N and P-type thermoelectric semiconductor, and other polycrystalline materials on other materials of varying complex shapes. The process developed has been demonstrated for bismuth and antimony telluride formulations as well as Tetrahedrite type copper sulfosalt materials. Both thick and thin layer thermoelectric semiconductor material is deposited over small or large areas to flat and highly complex shaped surfaces and will therefore help create a far greater application set for thermoelectric generator (TEG) systems. This process when combined with other manufacturing processes allows the total additive manufacturing of complete thermoelectric generator based waste heat recovery systems. The processes also directly apply to both thermoelectric cooler (TEC) systems, thermopile devices, and other polycrystalline functional material applications.

An alloy is provided that consists essentially of
(Ti.sub.xTa.sub.yV.sub.zA.sub.cNb.sub.1-x-y-z-c)(Fe.sub.1-dMn.sub.d).sub.a(Sb.sub.1-eSn.sub.e).sub.b,
wherein 0.06≤x≤0.24, 0.01≤y≤0.06, 0/08≤z≤0.4, 0.9≤(a, b)≤1.1, 0≤c≤0.05, 0≤d≤0.05 and 0≤e≤0.1 and A is one or more of the elements in the group consisting of Zr, Hf, Sc, Y, La, and up to 5 atom % impurities.

There is provided a far infrared (FIR) sensor device including a substrate, a thermopile structure and a heat absorption layer. The thermopile structure is arranged on the substrate. The heat absorption layer covers upon the thermopile structure, wherein the heat absorption layer has a hollow space which is formed by etching a metal layer in the heat absorption layer.

A heat conversion apparatus according to one embodiment of the present invention comprises: a duct through which cooling fluid passes; a first thermoelectric module disposed on a first surface of the duct; a second thermoelectric module disposed on a second surface, which is disposed in parallel to the first surface, of the duct; and a gas guide member disposed above a third surface disposed between the first surface and the second surface of the duct so as to be spaced from the third surface, wherein the gas guide member includes one end thereof coming in contact with the first thermoelectric module, the other end thereof coming in contact with the second thermoelectric module, and an extended part for connecting the one end and the other end, and the gas guide member can have a form in which the distance thereof from the third surface gradually increases toward the center between the one end and the other end.

Embodiments relate to systems designed for thermal transfer augmentation and thermionic energy harvesting. Thermionic energy harvesters are configured to supply electricity for applications such as electronics, communications, and other electrical devices. Thermal transfer may be used for a variety of heating/cooling and power generation/heat recovery systems, such as, refrigeration, air conditioning, electronics cooling, industrial temperature control, waste heat recovery, off-grid and mobile refrigeration, and cold storage.

Integrated thermal sensor having a housing delimiting an internal space. A support region extends through the internal space; a plurality of thermocouple elements are carried by the support region and are electrically coupled to each other. Each thermocouple element is formed by a first and a second thermoelectrically active region of a first and, respectively, a second thermoelectrically active material, the first thermoelectrically active material having a first Seeback coefficient, the second thermoelectrically active material having a second Seeback coefficient, other than the first Seeback coefficient. At least one of the first and second thermoelectrically active regions is a silicon-based material. The first and second thermoelectrically active regions of each thermocouple element are formed by respective elongated regions extending at a mutual distance into the internal space of the housing, from and transversely to the support region.

According to an example aspect of the present invention, there is provided a detector comprising an optically absorbing membrane suspended over a cavity between the membrane and a substrate, the substrate comprised in the detector, and a thermoelectric transducer attaching the optically absorbing membrane over the cavity, wherein the optically absorbing membrane forms a contacting element between n-type and p-type thermoelectric elements of the thermoelectric transducer.

A thermoelectric device and a manufacturing method thereof according to one embodiment of the present invention are disclosed. The thermoelectric device includes a plurality of upper electrodes and a plurality of lower electrodes, and an N-type thermoelectric material and a P-type thermoelectric material which are electrically connected, alternately arranged between the upper electrodes and the lower electrodes, and obliquely disposed on the lower electrode.

A thermoelectric device and a manufacturing method thereof according to one embodiment of the present invention are disclosed. The thermoelectric device includes a plurality of upper electrodes and a plurality of lower electrodes, and an N-type thermoelectric material and a P-type thermoelectric material which are electrically connected, alternately arranged between the upper electrodes and the lower electrodes, and obliquely disposed on the lower electrode.

A thermoelectric material element includes: a thermoelectric material portion composed of a thermoelectric material that includes a first crystal phase and a second crystal phase during an operation, the second crystal phase being different from the first crystal phase; a first electrode disposed in contact with the thermoelectric material portion; and a second electrode disposed in contact with the thermoelectric material portion and disposed to be separated from the first electrode. During the operation, the thermoelectric material portion includes a first temperature region having a first temperature, and a second temperature region having a second temperature lower than the first temperature of the first temperature region. A ratio of the first crystal phase to the second crystal phase in the first temperature region is larger than a ratio of the first crystal phase to the second crystal phase in the second temperature region.