Systems and methods include an electrical switch that establishes a first electrical conducting path between terminals of an electrical measurement apparatus through one or more electrical leads and an electrically-conductive sample in a first state, and a second electrical conducting path between the terminals through the one or more electrical leads while bypassing the sample in a second state. A voltage V.sub.S+L is measured across all of the sample and the one or more electrical leads in the first state, while a voltage V.sub.L is measured across the one or more electrical leads while bypassing the sample in the second state. Calculations according to the equation V.sub.S=V.sub.S+L−V.sub.L are performed to determine a precision DC voltage measurement of a voltage across the sample V.sub.S in the absence of Seebeck voltage offsets contributed by the one or more electrical leads.

Differential thermoelectric devices are provided for monitoring a change of areal thermal energy dissipation rate and surface temperature profile. The devices include a through electrode connecting to different sets of thermoelectric elements at different regions of the device. A sensing circuitry is electrically connected to the thermoelectric elements to measure a voltage output.

A thermoelectric material including a thermoelectric element including thermoelectric inorganic material represented by Chemical Formula 1; and a conduction path in contact with a surface of the thermoelectric element, wherein the conduction path is formed of a conductive material having electrical conductivity of greater than or equal to about 1,000 Siemens per centimeter
Bi.sub.xSb.sub.(2-x)Te.sub.(3-y-z)Se.sub.yS.sub.z   Chemical Formula 1 wherein 0<x≤2, 0≤y≤3, 0≤z≤3, and 0≤y+z≤3.

A thermoelectric generator consists of circuits arranged in parallel rows, in which thermocouples in adjacent rows are facing each other by the same-named junctions, forming alternating narrow zones of hot and cold junctions. At least one of the layers is a layer of thermal energy thermocouples, the repeatability of the rows of circuits of which is two times less than the repeatability of the rows of circuits of thermocouples generating electricity. Hot and cold zones between the rows of thermocouple circuits of all layers of thermocouples generating electricity and hot and cold junctions of the rows of thermocouple circuits of thermal energy are superimposed, respectively, by tight contact on each other by junctions and substrates, ensuring internal heat exchange between them. In addition, the generator is provided with an external heat supply circuit to the hot zone area and a heat removal circuit from the cold zone area.

A thermoelectric conversion material has a composition represented by the chemical formula Li.sub.3-aBi.sub.1-bSi.sub.b, in which the range of values a and b is: 0≤a≤0.0001, and −a+0.0003≤b≤0.023; 0.0001≤a<0.0003, and −a+0.0003≤b≤exp[−0.046×(ln(a)).sup.2−1.03×ln(a)−9.51]; or 0.0003≤a≤0.085, and 0<b≤exp[−0.046×(ln(a)).sup.2−1.03×ln(a)−9.51], and in which the thermoelectric conversion material has a BiF.sub.3-type crystal structure and has a p-type polarity.

A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body comprises magnesium silicide or an alloy containing magnesium silicide, and the average grain size of the crystal grains constituting the polycrystalline body is 1 μm or less, and the electrical conductivity is 10,000 S/m or higher.

A thermoelectric generator transmitter includes: a hollow exterior frame having open ends; a heat-receiving plate covering one of the open ends of the exterior frame; a columnar member standing on the heat-receiving plate; a thermoelectric generation module arranged for facilitating heat transfer between the columnar member and the thermoelectric generation module; a radiator plate covering a part of the other one of the open ends of the exterior frame, the part corresponding to a location of the thermoelectric generation module; a processor drivable by electricity generated by the thermoelectric generation module and capable of outputting a detection signal detected by a sensor to an external device; and a terminal that receives the detection signal of the sensor from the external device. An inside of the exterior frame is divided into a location of the thermoelectric generation module and the processor and a location of the terminal.

Connection with a wiring structure can be reliably achieved, whereby a semiconductor sensor device and a semiconductor sensor device manufacturing method with increased reliability are provided. A semiconductor sensor device in which a multiple of signal lines and a sensor detection portion are disposed includes a conductive film, disposed on a substrate, that configures the signal lines and whose upper face is exposed by an aperture portion of a width smaller than a width of the signal lines, a conductive member formed on the conductive film and electrically connected to the conductive film via the aperture portion, and a wiring structure, formed on an upper face of the conductive member, of an air bridge structure that connects the signal lines or the signal lines and the sensor detection portion, wherein an upper surface of the conductive member is in contact with the wiring structure, and a side face is exposed.

Described herein are devices incorporating Casimir cavities, which modify the quantum vacuum mode distribution within the cavities. The Casimir cavities can create energy differences within layers or device to drive energy from or to a portion of a layer disposed adjacent to or contiguous with the Casimir cavity by modifying the quantum vacuum mode distribution incident on one portion of the layer to be different from the quantum vacuum mode distribution incident on another portion of the layer. Additionally, Casimir cavities in which the cavity layer comprises a conductor that can be used to carry a flow of electrical power induced by the presence of the Casimir cavity.

A self-regulated solar power delivery system for data center. The ambient temperature outside of the data center is monitored. When the temperature exceeds a preset threshold, a controller activates switches to connect a PV system to a DC/DC converter and the DC/DC converter to a plurality of thermoelectric coolers (TECs). When the temperature drops below a second threshold, the controller disconnects the PV system. In this manner, when additional cooling is needed the most, i.e., during hot ambient temperature, the PV system also generates the most energy and can be used to energize TECs which enhance heat transportation from the processors. The PV system may also be used to activate a liquid cooling pump or other cooling devices to enhance heat removal from the servers.