According to one embodiment, a hybrid cooling system includes a cold plate that is arranged to mount on an IT component that is mounted on a piece of IT equipment, the cold plate is arranged to receive coolant via a supply line and to return warmed coolant via a return line, the warmed coolant is produced by the cold plate when the cold plate is in contact with the IT component and heat generated by the IT component is transferred into the coolant by the cold plate; a TEC element that is arranged to couple to the IT component; and a heat sink that includes a base that is arranged to couple to the TEC element and one or more fins, the TEC element is configured to transfer at least a portion of the heat generated by the IT component into the one or more fins of the heat sink.

According to one embodiment, a hybrid cooling system includes a cold plate that is arranged to mount on an IT component that is mounted on a piece of IT equipment, the cold plate is arranged to receive coolant via a supply line and to return warmed coolant via a return line, the warmed coolant is produced by the cold plate when the cold plate is in contact with the IT component and heat generated by the IT component is transferred into the coolant by the cold plate; a TEC element that is arranged to couple to the IT component; and a heat sink that includes a base that is arranged to couple to the TEC element and one or more fins, the TEC element is configured to transfer at least a portion of the heat generated by the IT component into the one or more fins of the heat sink.

A method of manufacturing a semiconductor structure includes forming a first dielectric layer surrounding an optical component. The method further includes forming a thermal control mechanism adjacent to the optical component and at least partially surrounded by the first dielectric layer. Forming the thermal control mechanism includes forming a first thermoelectric member having a first conductivity type, forming a second thermoelectric member having a second conductivity type opposite to the first conductivity type, wherein the second thermoelectric member is opposite to the first thermoelectric member; and forming a conductive structure over and electrically connected to the thermal control mechanism. The method further includes forming a second dielectric layer over the first dielectric layer and surrounding the conductive structure.

A method of manufacturing a semiconductor structure includes forming a first dielectric layer surrounding an optical component. The method further includes forming a thermal control mechanism adjacent to the optical component and at least partially surrounded by the first dielectric layer. Forming the thermal control mechanism includes forming a first thermoelectric member having a first conductivity type, forming a second thermoelectric member having a second conductivity type opposite to the first conductivity type, wherein the second thermoelectric member is opposite to the first thermoelectric member; and forming a conductive structure over and electrically connected to the thermal control mechanism. The method further includes forming a second dielectric layer over the first dielectric layer and surrounding the conductive structure.

A thermal display module configured to create a thermal pattern discerned by a visually impaired user to determine his or her surroundings. The thermal display module includes a plurality of thermoelectric modules, each of which are configured to cool or heat a pixel plate in close proximity to a user's skin. The cooling or heating of each of the thermoelectric modules create the thermal pattern discernable by the user.

A thermoelectric watch including a thermoelectric generator; a voltage booster connected to the thermoelectric generator; an energy management circuit connected to the voltage booster and configured to control the charging of at least one energy storage element, the energy management circuit including an output configured to change from a first logic state to a second logic state when the thermoelectric generator starts generating electrical energy, and to change from the second logic state to the first logic state when the thermoelectric generator finishes generating electrical energy.

A handheld device has a projector that projects a pattern of light onto an object, a first camera that captures the projected pattern of light in first images, a second camera that captures the projected pattern of light in second images, a registration camera that captures a succession of third images, one or more processors that determines three-dimensional (3D) coordinates of points on the object based at least in part on the projected pattern, the first images, and the second images, the one or more processors being further operable to register the determined 3D coordinates based at least in part on common features extracted from the succession of third images, and a mobile computing device operably connected to the handheld device and cooperating with the one or more processors, the mobile computing device operable to display the registered 3D coordinates of points.

A thermoelectric element according to an embodiment of the present invention comprises: a first metallic substrate; a first resin layer which is disposed on the first metallic substrate and comes in direct contact with the first metallic substrate; a plurality of first electrodes disposed on the first resin layer; a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs disposed on the plurality of first electrodes; a plurality of second electrodes disposed on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs; a second resin layer disposed on the plurality of second electrodes; and a second metallic substrate disposed on the second resin layer, wherein a surface of the first metallic substrate that faces the first resin layer comprises a first region and a second region disposed inside the first region, wherein a surface roughness of the second region is greater than a surface roughness of the first region, wherein the first resin layer is disposed on the second region.

A ZrCoBi-based p-type half-Heusler material can have a formula: ZrCoBi.sub.1-x-ySn.sub.xSb.sub.y, where x can vary between 0.01 and 0.25, and y can vary between 0 and 0.2. An average dimensionless figure-of-merit (ZT) for the material can be greater than or equal to about 0.80 as calculated by an integration method for temperatures between 300 and 973 K. A ZrCoBi-based n-type half-Heusler material can have a formula: ZrCo.sub.1-xNi.sub.xBi.sub.1-ySb.sub.y, where x can vary between 0.01 and 0.25, and y can vary between 0 and 0.3. The material has an average dimensionless figure-of-merit (ZT) is greater than or equal to about 0.65 as calculated by an integration method for temperatures between 300 and 973 K.

Provided by the present invention is a magnesium-antimony-based (Mg—Sb-based) thermoelement, a preparation method and application thereof. The Mg—Sb-based thermoelement comprises: a substrate layer of a Mg—Sb-based thermoelectric material positioned in the center of the thermoelement, transitional layers that are attached to the two surfaces of the substrate layer, and two electrode layer that are respectively attached to the surfaces of the two transitional layers; the transitional layers are made of a magnesium-copper alloy and/or magnesium-aluminum alloy, and the electrode layer is made of copper. The transitional layer and the electrode layer which are developed in the present invention and which are suitable for a Mg—Sb-based thermoelectric material have great significance and prospects in application. The electrode layer enable the Mg—Sb-based thermoelectric material to have an opportunity to enter the market and realize commercialization. Compared with the existing bismuth telluride thermoelectric devices in the market, the thermoelectric device prepared has lower costs, may simultaneously save the rare element tellurium, and is beneficial in saving energy and protecting the environmental.