Some embodiments include apparatus and methods for using a switch to couple an inductor to an energy harvester for a time interval to allow charging of the inductor during the time interval, and using a circuit to generate control information for power management. A value of the control information is based on a value of the time interval.

A humidity sensor system (10) includes a monolithically integrated semiconductor device (12). The monolithically integrated semiconductor device (12) includes an optical waveguide (14), a thermo-electric cooling device (16), a temperature measurement probe (18), and control circuitry (26) operable to cause the thermo-electric cooling device (16) to adjust a temperature of the monolithically integrated semiconductor device (12). The optical waveguide (14) is operable to receive an input optical signal from a light source (20) and to provide an output optical signal for sensing by a light detector (22). The humidity sensor system (10) further includes processing circuitry operable to receive output signals from the light detector (22) and from the temperature measurement probe (18) and operable to determine a relative humidity based on the output signals from the light detector (22) and the temperature measurement probe (18).

A device for manipulating the temperature of a surface may include a heat transfer surface including active portions and a passive portion. The passive portion may include an inner passive portion disposed between each of the active portions and/or may include an outer passive portion that may surround each of the active portions. The active portions may form 40-90% of a total surface area of the heat transfer surface, where total surface area includes active portions and an inner passive portion. The passive portion(s) may have a thermal conductivity less than the active portion. A processor may be in electrical communication with thermoelectric modules defining or forming the active portions to generate a heat flux through the heat transfer surface. The heat flux through the active portions may be between 500 and 15,000 W/m.sup.2 during nominal operation of the device.

An apparatus and method for temperature control, and plasma equipment. The apparatus for temperature control includes a temperature control component and a control component, the control component is electrically connected to the temperature control component and is configured to obtain an actual temperature of a top electrode in plasma equipment in real time, the temperature control component includes at least one semiconductor cooling device located on a surface of the top electrode, and a plurality of semiconductor cooling fins are configured as a plurality of annular heating blocks, and the control component is configured to control each heating region for cooling or heating.

A structure and a method for mounting thermocouple on an intermetallic compounds such as TiAl by suppressing occurrence of cracks are provided. A thermocouple mounting structure is provided with a substrate, a coating formed on the substrate and a foil joined on the coating, and sandwiches a thermocouple between the substrate and the foil. A thermocouple mounting method includes forming a coating on a substrate and welding a foil on the coating, and the welding includes arranging a thermocouple so that the substrate and the foil sandwiches the thermocouple. Occurrence of cracks in the substrate formed with intermetallic compounds can be suppressed by providing a thermal spray coating between the substrate and the foil.

A thermocouple assembly for surface temperature measurement, comprising a sheathed thermocouple sensor cable, a positioning pad, receiving and/or securing a thermocouple sensor end at a desired measuring point, an insulation body, and a shielding, wherein the positioning pad is mechanically connected to the shielding. Additionally methods for the installation of a thermocouple assembly are also provided.

An imager pixel comprising a micro-platform supported by phononic nanowires, the nanowires providing an extreme-level of thermal isolation from a surrounding substrate. The micro-platform in embodiments comprises thermal sensors sensitive to heat from absorbed incident longwave/shortwave photonic irradiation. In embodiments, the pixel photonic sensing structure comprises both a thermal sensor together with a separate photodiode/phototransistor/photogate for sensing RGB and NIR wavelengths. Some embodiments comprise a micro-platform with an integral Peltier thermoelectric element permitting in situ refrigeration to cryogenic temperatures.

A thermoelectric assembly includes a thermoelectric module having a hot side and a cold side, a first heat exchanger coupled to the hot side of the thermoelectric module, a second heat exchanger coupled to the cold side of the thermoelectric module, a gasket positioned between the first heat exchanger and the second heat exchanger and defining an opening for receiving the thermoelectric module, and a plastic barrier film. The gasket includes an inner perimeter adjacent to the thermoelectric module and an outer perimeter distal to the thermoelectric module. The plastic barrier film is coupled to at least a portion of the outer perimeter of the gasket to substantially inhibit an ingress of moisture to the gasket and the thermoelectric module. Other example thermoelectric assemblies are also disclosed.

A method may be provided of manufacturing a thermoelectric leg. The method may include preparing a first metal substrate including a first metal, and forming a first plated layer including a second metal on the first metal substrate. The method may also include disposing a layer including tellurium (Te) on the first plated layer, and forming a portion of the first plated layer as a first bonding layer by reacting the second metal and the Te. The method also includes disposing a thermoelectric material layer including bismuth (Bi) and Te on an upper surface of the first bonding layer, and disposing a second metal substrate, on which a second bonding layer and a second plated layer are formed, on the thermoelectric material layer, and sintering.

A temperature sensor includes a block body, a first thermocouple, and a second thermocouple. The first thermocouple includes a first strand, a second strand, a first insulator surrounding the first strand and the second strand, and a first metal sheath surrounding the first insulator. The second thermocouple includes a third strand, a fourth strand, a second insulator surrounding the third strand and the fourth strand, and a second metal sheath surrounding the second insulator. An end portion of each of the first thermocouple and the second thermocouple is buried in the block body.