An infrared sensor comprises a base substrate including a recess, a bolometer infrared ray receiver, and a Peltier device. The bolometer infrared ray receiver comprises a resistance variable layer, a bolometer first beam, and a bolometer second beam. The Peltier device comprises a Peltier first beam formed of a p-type semiconductor material and a Peltier second beam formed of an n-type semiconductor material. The Peltier device is in contact with a back surface of the bolometer infrared ray receiver. One end of each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam is connected to the base substrate. The bolometer infrared ray receiver and the Peltier device are suspended above the base substrate. Each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam has a phononic crystal structure including a plurality of through holes arranged regularly.

A passive thermal oscillator combines a thermoelectric device and a passive analog electrical circuit to produce a time-oscillating temperature difference. The oscillator makes use of a temperature difference imposed across a thermoelectric device to produce a Seebeck voltage to periodically trigger electrical current to pass through a switch. The periodic electrical current causes periodic Peltier cooling producing a time-oscillating temperature difference across the thermoelectric device. There is no requirement for additional external energy input because the thermal energy generates a voltage that is used as the driving force. The operation is purely passive. So long as there is a temperature difference across the thermoelectric device, then the passive thermal oscillator oscillates. The passive thermal oscillator can integrate multiple energy conversion device technologies to operate cooperatively. The cooperation of multiple energy conversion technologies yields a much higher overall system efficiency than just the conversion of thermal energy into electrical energy.

Method for manufacturing a device comprising a stack including a first layer comprising electrical conductors electrically insulated from each other, a second electrically conducting layer, a third layer of pyroelectric material, said third layer being arranged between the first layer and the second layer, said method comprising, a) producing said stack on a substrate, the material of the third layer not being pyroelectric at this stage, b) producing a polarisation layer made of epoxy glue in electrical contact with the electrical conductors in the first layer, c) applying polarisation voltage to said third layer such that its material becomes pyroelectric, d) exposing the polarisation layer in its second state by ultraviolet radiation so as to make it at least partly electrically insulating.

A passive thermal oscillator combines a thermoelectric device and a passive analog electrical circuit to produce a time-oscillating temperature difference. The oscillator makes use of a temperature difference imposed across a thermoelectric device to produce a Seebeck voltage to periodically trigger electrical current to pass through a switch. The periodic electrical current causes periodic Peltier cooling producing a time-oscillating temperature difference across the thermoelectric device. There is no requirement for additional external energy input because the thermal energy generates a voltage that is used as the driving force. The operation is purely passive. So long as there is a temperature difference across the thermoelectric device, then the passive thermal oscillator oscillates. The passive thermal oscillator can integrate multiple energy conversion device technologies to operate cooperatively. The cooperation of multiple energy conversion technologies yields a much higher overall system efficiency than just the conversion of thermal energy into electrical energy.

The present invention provides an infrared pixel structure and a hybrid imaging device which use comb-shaped top plates and bottom plates to form capacitors. The upper electrode has a non-fixed end such that the infrared sensitive element in the upper electrode generates thermal stress and deforms when absorbing the infrared light, which changes the capacitance of the capacitors formed by the top plates and the bottom plates to achieve infrared detection and increase the device sensitivity. Furthermore, the infrared pixel structure can be used in an infrared light and visible light hybrid imaging device to achieve visible light imaging and infrared imaging in a same silicon substrate, so as to increase the imaging quality.

A light detection device includes: a Fabry-Perot interference filter provided with a light transmission region; a light detector configured to detect light transmitted through the light transmission region; a package having an opening and accommodating the Fabry-Perot interference filter and the light detector; and a light transmitting unit arranged on an inner surface of the package so as to close an opening, the light transmitting unit including a band pass filter configured to transmit light incident on the light transmission region. When viewed from a direction parallel to the line, an outer edge of the Fabry-Perot interference filter is positioned outside an outer edge of the opening, and an outer edge of the light transmitting unit is positioned outside the outer edge of the Fabry-Perot interference filter.

A method of making an electrocaloric article is disclosed. The method includes mounting a supported electrocaloric film to a frame. The supported electrocaloric film includes an electrocaloric film and a first support film disposed on a first side of the electrocaloric film. An active area of the electrocaloric film is provided, which is not covered by the first support film on the first side of the electrocaloric film. Electrical connections are provided to electrodes disposed on opposing sides of the electrocaloric film in the active area.

A method of making an electrocaloric article is disclosed. The method includes mounting a supported electrocaloric film to a frame. The supported electrocaloric film includes an electrocaloric film and a first support film disposed on a first side of the electrocaloric film. An active area of the electrocaloric film is provided, which is not covered by the first support film on the first side of the electrocaloric film. Electrical connections are provided to electrodes disposed on opposing sides of the electrocaloric film in the active area.

A light detection device includes: a Fabry-Perot interference filter provided with a light transmission region; a light detector configured to detect light transmitted through the light transmission region; a package having an opening and accommodating the Fabry-Perot interference filter and the light detector; and a light transmitting unit arranged on an inner surface of the package so as to close an opening, the light transmitting unit including a band pass filter configured to transmit light incident on the light transmission region. When viewed from a direction parallel to the line, an outer edge of the Fabry-Perot interference filter is positioned outside an outer edge of the opening, and an outer edge of the light transmitting unit is positioned outside the outer edge of the Fabry-Perot interference filter.

Connection with a wiring structure can be reliably achieved, whereby a semiconductor sensor device and a semiconductor sensor device manufacturing method with increased reliability are provided. A semiconductor sensor device in which a multiple of signal lines and a sensor detection portion are disposed includes a conductive film, disposed on a substrate, that configures the signal lines and whose upper face is exposed by an aperture portion of a width smaller than a width of the signal lines, a conductive member formed on the conductive film and electrically connected to the conductive film via the aperture portion, and a wiring structure, formed on an upper face of the conductive member, of an air bridge structure that connects the signal lines or the signal lines and the sensor detection portion, wherein an upper surface of the conductive member is in contact with the wiring structure, and a side face is exposed.