A method for producing a micro system, said method comprising: providing a substrate (2) made of aluminum oxide; producing a thin film (6) on the substrate (2) by depositing lead zirconate titanate onto the substrate (2) with a thermal deposition method such that the lead zirconate titanate in the thin film (6) is self-polarized and is present predominantly in the rhombohedral phase; and cooling down the substrate (2) together with the thin film (6).

A long wavelength infrared sensor includes a first magnetoresistive unit; a second magnetoresistive unit; and a light absorption layer that absorbs light and emits heat, wherein the first magnetoresistive unit includes a first magnetoresistive element and a second magnetoresistive element electrically connected to each other, the second magnetoresistive unit includes a third magnetoresistive element and a fourth magnetoresistive element electrically connected to each other, the first and third magnetoresistive elements each have an antiparallel state of magnetization direction, the second and fourth magnetoresistive elements each have a parallel state of magnetization direction, and the first magnetoresistive element is electrically connected to the third magnetoresistive element by way of the second magnetoresistive element.

A long wavelength infrared sensor includes a first magnetoresistive unit; a second magnetoresistive unit; and a light absorption layer that absorbs light and emits heat, wherein the first magnetoresistive unit includes a first magnetoresistive element and a second magnetoresistive element electrically connected to each other, the second magnetoresistive unit includes a third magnetoresistive element and a fourth magnetoresistive element electrically connected to each other, the first and third magnetoresistive elements each have an antiparallel state of magnetization direction, the second and fourth magnetoresistive elements each have a parallel state of magnetization direction, and the first magnetoresistive element is electrically connected to the third magnetoresistive element by way of the second magnetoresistive element.

A magnetic-thin-film-equipped substrate includes a substrate and a magnetic thin film. A difference obtainable by subtracting a first internal stress of the magnetic thin film from a second internal stress of the magnetic thin film is 50 MPa or more. The first internal stress is an internal stress of the magnetic thin film in a first direction along a surface of the magnetic thin film extending in parallel with the substrate. The second internal stress is the internal stress of the magnetic thin film in a second direction parallel to the surface and perpendicular to the first direction.

A magnetic-thin-film-equipped substrate includes a substrate and a magnetic thin film. A difference obtainable by subtracting a first internal stress of the magnetic thin film from a second internal stress of the magnetic thin film is 50 MPa or more. The first internal stress is an internal stress of the magnetic thin film in a first direction along a surface of the magnetic thin film extending in parallel with the substrate. The second internal stress is the internal stress of the magnetic thin film in a second direction parallel to the surface and perpendicular to the first direction.

A magnetic cooling device includes a magnetocaloric element, the magnetocaloric element being a paramagnetic garnet ceramic. The density of the paramagnetic garnet ceramic is preferably greater than or equal to 90%. The garnet ceramic is preferably a gadolinium gallium garnet ceramic or an ytterbium gallium garnet ceramic.

A magnetic cooling device includes a magnetocaloric element, the magnetocaloric element being a paramagnetic garnet ceramic. The density of the paramagnetic garnet ceramic is preferably greater than or equal to 90%. The garnet ceramic is preferably a gadolinium gallium garnet ceramic or an ytterbium gallium garnet ceramic.

A thermoelectric conversion element is made of a material that is able to be magnetized in any direction at zero magnetic field and configured to exhibit an anomalous Nernst effect. A thermoelectric conversion device includes a substrate and a plurality of thermoelectric conversion elements on the substrate. Each of the plurality of thermoelectric conversion elements having a shape extending in one direction, is made of a material that is able to be magnetized in any direction at zero magnetic field, and is configured to exhibit an anomalous Nernst effect. The plurality of thermoelectric conversion elements are arranged in parallel to one another in a direction perpendicular to the one direction and electrically connected in series.

A thermoelectric conversion element is made of a material that is able to be magnetized in any direction at zero magnetic field and configured to exhibit an anomalous Nernst effect. A thermoelectric conversion device includes a substrate and a plurality of thermoelectric conversion elements on the substrate. Each of the plurality of thermoelectric conversion elements having a shape extending in one direction, is made of a material that is able to be magnetized in any direction at zero magnetic field, and is configured to exhibit an anomalous Nernst effect. The plurality of thermoelectric conversion elements are arranged in parallel to one another in a direction perpendicular to the one direction and electrically connected in series.

Provided is a thermoelectric conversion element having a high Anomalous Nernst Effect at a lower cost. A thermoelectric conversion element (1) includes a magnetic alloy material containing aluminum, cobalt, and samarium, and a power generation layer (10), in which in the power generation layer (10), a content of aluminum in the magnetic alloy material is in a range of 1 atomic percent to 40 atomic percent, a content of samarium in the magnetic alloy material is in a range of 12 atomic percent to 40 atomic percent, and a content of cobalt in the magnetic alloy material is in a range of 57 atomic percent to 82 atomic percent.