In some embodiments, a piezoelectric biosensor is provided. The piezoelectric biosensor includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A sensing reservoir is disposed over the piezoelectric structure and exposed to an ambient environment, where the sensing reservoir is configured to collect a fluid comprising a number of bio-entities.

A piezoelectric device includes a first piezoelectric substrate, a second piezoelectric substrate and an adhesive layer. First conductor patterns are provided on a front surface of the first piezoelectric substrate. A first piezoelectric element is defined by the first conductor patterns. Second conductor patterns are provided on a front surface of the second piezoelectric substrate. A second piezoelectric element is provided of these patterns. The adhesive layer adheres a rear surface of the first piezoelectric substrate and a rear surface of the second piezoelectric substrate to each other. The adhesive layer adheres the first and second substrates to each other such that a compressive stress is applied to the first and second piezoelectric substrates in a bonded state.

A method of manufacture for an acoustic resonator device. The method includes forming a nucleation layer characterized by nucleation growth parameters overlying a substrate and forming a strained piezoelectric layer overlying the nucleation layer. The strained piezoelectric layer is characterized by a strain condition and piezoelectric layer parameters. The process of forming the strained piezoelectric layer can include an epitaxial growth process configured by nucleation growth parameters and piezoelectric layer parameters to modulate the strain condition in the strained piezoelectric layer. By modulating the strain condition, the piezoelectric properties of the resulting piezoelectric layer can be adjusted and improved for specific applications.

A method of manufacture for an acoustic resonator device. The method includes forming a nucleation layer characterized by nucleation growth parameters overlying a substrate and forming a strained piezoelectric layer overlying the nucleation layer. The strained piezoelectric layer is characterized by a strain condition and piezoelectric layer parameters. The process of forming the strained piezoelectric layer can include an epitaxial growth process configured by nucleation growth parameters and piezoelectric layer parameters to modulate the strain condition in the strained piezoelectric layer. By modulating the strain condition, the piezoelectric properties of the resulting piezoelectric layer can be adjusted and improved for specific applications.

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

A fluidic device includes a base structure including at least one bulk acoustic wave (BAW) resonator structure having a fluidic passage containing at least one functionalized active region overlaid with functionalization material suitable to bind an analyte. One or more of a wall structure, a cover structure, or a portion of the base structure defining the fluidic passage includes additional functionalization material to form at least one absorber configured to bind at least one analyte. The dynamic measurement range of a BAW resonator structure is increased when the at least one absorber is placed upstream of the at least one functionalized active region.

A method of manufacture for an acoustic resonator device. The method includes forming a nucleation layer characterized by nucleation growth parameters overlying a substrate and forming a strained piezoelectric layer overlying the nucleation layer. The strained piezoelectric layer is characterized by a strain condition and piezoelectric layer parameters. The process of forming the strained piezoelectric layer can include an epitaxial growth process configured by nucleation growth parameters and piezoelectric layer parameters to modulate the strain condition in the strained piezoelectric layer. By modulating the strain condition, the piezoelectric properties of the resulting piezoelectric layer can be adjusted and improved for specific applications.

A composite substrate according to the present invention includes a support substrate having a diameter of 2 inches or more, and a piezoelectric substrate having a thickness of 20 m or less and bonded to the support substrate to transmit light. The piezoelectric substrate has a thickness distribution shaped like a fringe. A waveform having an amplitude within a range of 5 to 100 nm in a thickness direction and a pitch within a range of 0.5 to 20 mm in a width direction appears in the thickness distribution of the piezoelectric substrate in a cross section of the composite substrate taken along a line orthogonal to the fringe, and the pitch of the waveform correlates with a width of the fringe. In the piezoelectric substrate, the fringe may include either parallel fringes or spiral or concentric fringes.

A wafer-level chip-scale package includes a body, a conductive via passing through the body, a contact bump formed at a lower portion of the body and in electrical connection with a lower end of the conductive via, a piezoelectric substrate directly bonded to an upper end of the conductive via, and a cavity defined between a portion of the body and the piezoelectric substrate.

A differential pressure sensor chip (2) includes: first and second pressure introduction holes (21_1 and 21_2); first and second diaphragms (23_1 and 23_2) formed to cover the first and second pressure introduction holes; first and second depressions (24_1 and 24_2) each in a form of a depression respectively provided to face the first and second pressure introduction holes with the first and second diaphragms interposed therebetween; a first communication channel (25) that makes a chamber between the first depression and the first diaphragm and a chamber between the second depression and the second diaphragm communicate to each other; a pressure-transmission-material introduction passage (26) an end of which is an opening and another end of which is joined to the first communication channel; a pressure transmission material (27) that fills the first communication channel, the two chambers, and the pressure-transmission-material introduction passage; and a sealing member (7) formed of a metal formed to seal a depression on a metal layer (9) formed on a surface of the opening of the pressure-transmission-material introduction passage.