This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory for storing data, and the semiconductor memory may include a substrate; an interlayer dielectric layer over the substrate and patterned to include a contact hole; a lower contact structure formed over the substrate in the contact hole; and a variable resistance element formed over and electrically coupled to the lower contact structure, wherein the lower contact structure may include: a spacer formed on sidewalls of the contact hole in the interlayer dielectric layer and having a substantially uniform thickness along a direction perpendicular to a surface of the substrate; a contact plug filling a portion of the contact hole; and a contact pad formed over the contact plug and filling a remaining portion of the contact hole.

In some embodiments, in response to the user selecting a first node in the tree to be pinned, the system displays a first detail panel for the first node, wherein the first detail panel displays state information for the first node, wherein the state information is frozen at the time of pinning. Moreover, in response to the user selecting a second node in the tree to be pinned, the system displays a second detail panel for the second node, wherein the second detail panel displays state information for the second node, wherein the state information is frozen at the time of pinning. Note that the first detail panel is displayed concurrently with the second detail panel to facilitate comparing state information between the first and second nodes.

A piezoelectric device includes a piezoelectric vibrating piece, an excitation electrode, an extraction electrode, a container, a pad, a conductive member, and a heat conductive metal film. The excitation electrode is disposed on a front surface and a back surface of the piezoelectric vibrating piece. The extraction electrode is extracted from the excitation electrode. The container houses the piezoelectric vibrating piece. The pad is disposed in the container, and the pad is connected to the piezoelectric vibrating piece. The conductive member connects the pad to the extraction electrode. The heat conductive metal film is disposed at least on a surface of a pad side of the piezoelectric vibrating piece, the heat conductive metal film is extracted from the extraction electrode without contacting the excitation electrode.

There is provided a ferroelectric thin-film laminated substrate, including a substrate, and further including a lower electrode layer, a ferroelectric thin-film layer, an upper electrode adhesive layer, and an upper electrode layer being sequentially stacked on the substrate, in which: the lower electrode layer is made of platinum or a platinum alloy; the ferroelectric thin-film layer is made of a sodium potassium niobate (typical chemical formula of (K.sub.1-xNa.sub.x)NbO.sub.3, 0.4?x?0.7); the upper electrode layer is made of gold; the upper electrode adhesive layer is made of a metal that has less oxidizability than titanium and can make a solid solution alloy without generating an intermetallic compound with gold; and a part of the upper electrode adhesive layer and a part of the upper electrode layer are alloyed.

A resonant member of a MEMS resonator oscillates in a mechanical resonance mode that produces non-uniform regional stresses such that a first level of mechanical stress in a first region of the resonant member is higher than a second level of mechanical stress in a second region of the resonant member. A plurality of openings within a surface of the resonant member are disposed more densely within the first region than the second region and at least partly filled with a compensating material that reduces temperature dependence of the resonant frequency corresponding to the mechanical resonance mode.

An electrostatic induction-type vibration power generation device and method for improving a power generation amount, and extracting an external electric field from a spontaneous polarization electret. A pair of conductive plates is disposed with a gap therebetween. A charged body formed of a spontaneous polarization electret having predetermined thickness has a positively charged lower surface and negatively charged upper surface. The charged body is between conductive plates in contact with one conductive plate. The gap between the conductive plates is displaced in a direction vertical to the surfaces of the spontaneous polarization electret, whereby an electrostatic capacitance changes and electric power is generated. The other conductive plate is disposed at a position where an absolute value of an external electric field emitted outside from the charged body is between 2.710.sup.7 V/m and 1.510.sup.10 V/m. Moreover, the thickness of the spontaneous polarization electret is between 1 mm and 60 mm.

A piezoelectric device package may include: a case having a plurality of terminals formed on a lower surface thereof; a piezoelectric device formed in the case; a temperature measuring device formed on the lower surface of the case and having a thin film form; and a cover member enclosing an upper portion of the case.

A crystal unit includes: a crystal substrate; and a pair of excitation electrodes formed respectively on both surfaces of the crystal substrate, wherein at least one of the pair of excitation electrodes has a pattern serving as both of an excitation electrode and a coil. An oscillator includes a package and a crystal unit accommodated in the package. The crystal unit includes a crystal substrate, and a pair of excitation electrodes formed respectively on both surfaces of the crystal substrate. At least one of the pair of excitation electrodes has a pattern serving as both of an excitation electrode and a coil. An oscillation circuit is accommodated in the package and electrically connected to the crystal unit.

A method of manufacturing surface acoustic wave device chips includes grinding a reverse side of a wafer with a surface acoustic wave device formed in each area demarcated by a plurality of crossing projected dicing lines on a face side of the wafer; before or after grinding, applying a laser beam to the reverse side of the wafer such that the laser beam is focused at a position within the wafer, the position being closer to the face side of the wafer than a position corresponding to a reverse side of each of the surface acoustic wave device chips to be produced from the wafer, thereby forming a modified layer for diffusing an acoustic wave; and after grinding and applying the laser beam, dividing the wafer along the projected dicing lines into a plurality of the surface acoustic wave device chips.

A semiconductor integrated circuit constituting a part of a sensor signal processing apparatus for processing sensor signal output from a sensor includes: a first terminal where one end of a vibrator externally attached to the semiconductor integrated circuit is connected and a second terminal where the other end of the vibrator is connected; and an oscillation circuit oscillating the vibrator connected via the first and second terminals, wherein the oscillator circuit intermittently oscillating the vibrator based on control signal, wherein a first period where the oscillation circuit oscillates the vibrator and a second period where the oscillation circuit does not oscillate the vibrator are alternately switched, wherein, during the first period, potentials of the first and second terminals are alternately switched complementarily to high level and low level, and wherein, during the second period, the potentials of the first terminal and the second terminal are fixed to the low level.