A method of making a MEMS actuator with a monolithic body of semiconductor material includes forming a supporting portion of semiconductor material, orientable with respect to first and second rotation axes, the first rotation axis being transverse with respect to the second rotation axis, and forming a first frame of semiconductor material. The method further includes forming first deformable elements, of semiconductor material, coupled to the first frame, and configured to control a rotation of the supporting portion about the first rotation axis. The method also includes forming a second frame of semiconductor material, and forming second deformable elements, of semiconductor material, coupled to the first frame and to the second frame, and configured to control a rotation of the supporting portion about the second rotation axis. The first and second deformable elements are formed to carry respective first and second piezoelectric actuation elements.

A method of making a MEMS actuator with a monolithic body of semiconductor material includes forming a supporting portion of semiconductor material, orientable with respect to first and second rotation axes, the first rotation axis being transverse with respect to the second rotation axis, and forming a first frame of semiconductor material. The method further includes forming first deformable elements, of semiconductor material, coupled to the first frame, and configured to control a rotation of the supporting portion about the first rotation axis. The method also includes forming a second frame of semiconductor material, and forming second deformable elements, of semiconductor material, coupled to the first frame and to the second frame, and configured to control a rotation of the supporting portion about the second rotation axis. The first and second deformable elements are formed to carry respective first and second piezoelectric actuation elements.

A piezoelectric device includes a base member, a first conductive film arranged above the base member in contact with an upper surface of the base member, a piezoelectric film arranged above the first conductive film in contact with an upper surface of the first conductive film, a second conductive film arranged on the piezoelectric film, and an insulating portion provided inside a trench penetrating through the piezoelectric film and the first conductive film. The insulating portion has a higher electrical resistivity than the piezoelectric film.

A piezoelectric device includes a base member, a first conductive film arranged above the base member in contact with an upper surface of the base member, a piezoelectric film arranged above the first conductive film in contact with an upper surface of the first conductive film, a second conductive film arranged on the piezoelectric film, and an insulating portion provided inside a trench penetrating through the piezoelectric film and the first conductive film. The insulating portion has a higher electrical resistivity than the piezoelectric film.

A mechanical microsystem including a pair of elastically deformable elements, a mechanical hinge joining the deformable elements together, and at least two electroactive layers. The microsystem is configured such that, from a rest position wherein the deformable elements fall into a plane, a deformation of one of the deformable elements displacing it outside of the plane induces an electric current circulation in one of the two electroactive layers, and/or conversely. Each deformable element has a front face and a rear face opposite one another and substantially parallel to the plane. A first electroactive layer is arranged together with a first deformable element on its rear face, and a second electroactive layer, different from the first layer, is arranged with a second deformable element, different from the first element, on its front face.

In an electronic component, electrodes defining functional portions are provided on a piezoelectric substrate. In order to define a hollow portion which the functional portions face, there are provided a first support with a frame shape, and second supports on the piezoelectric substrate in an inner side region surrounded by the first support. A cover is laminated on the first support as well as on the second supports to define the hollow portion. A height of each of the second supports is higher than a height of the first support.

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

A piezoelectric thin film resonator includes a substrate, a lower electrode provided over the substrate, a piezoelectric layer provided on the lower electrode, an upper electrode provided on the piezoelectric layer, the lower electrode and the upper electrode sandwiching at least a part of the piezoelectric layer therebetween to form a resonance region, and an acoustic mirror provided between the substrate and the lower electrode, the acoustic mirror including one or more first layers and second layers that are alternately stacked, each of the one or more first layers having an end face inclined such that a first surface at the lower electrode side is larger than a second surface at the substrate side and having an edge positioned outside the resonance region in a plan view, the second layers being made of a material different from a material of the one or more first layers.

A piezoelectric thin film resonator includes a substrate, a lower electrode provided over the substrate, a piezoelectric layer provided on the lower electrode, an upper electrode provided on the piezoelectric layer, the lower electrode and the upper electrode sandwiching at least a part of the piezoelectric layer therebetween to form a resonance region, and an acoustic mirror provided between the substrate and the lower electrode, the acoustic mirror including one or more first layers and second layers that are alternately stacked, each of the one or more first layers having an end face inclined such that a first surface at the lower electrode side is larger than a second surface at the substrate side and having an edge positioned outside the resonance region in a plan view, the second layers being made of a material different from a material of the one or more first layers.

A piezoelectric actuator includes: a plurality of discrete electrodes, which is disposed on one side of a piezoelectric element; a common electrode, which is disposed on the other side of the piezoelectric element; a plurality of discrete contacts, which are respectively connected to the plurality of discrete electrodes, and wherein the plurality of discrete electrodes include: a first discrete electrode; and a second discrete electrode, which is disposed at a position away from a corresponding discrete contact as compared with the first discrete electrode, wherein the common electrode includes: a first common electrode, which faces the first discrete electrode in the thickness direction; and a second common electrode, which is separated from the first common electrode in the surface direction and faces the second discrete electrode in the thickness direction, and wherein a connection wiring is provided to connect the first common electrode with the second common electrode.