In a composite component, a semiconductor device is stacked on an elastic wave device. Side electrodes extend from at least one side surface of a piezoelectric substrate of the elastic wave device to at least a side surface of a semiconductor substrate of the semiconductor device and are connected to an IDT electrode and functional electrodes. The side electrodes extend onto at least one of a second main surface of the piezoelectric substrate and a second main surface of the semiconductor substrate.

An acoustic wave resonator includes: a support substrate; a piezoelectric substrate located on the support substrate; a first amorphous layer that is in contact with the support substrate and is mainly composed of one or more constituent elements of the support substrate; a second amorphous layer that is in contact with the piezoelectric substrate and the first amorphous layer, is mainly composed of one or more constituent elements of the piezoelectric substrate, and is thinner than the first amorphous layer; and a pair of comb-shaped electrodes that is located on an opposite surface of the piezoelectric substrate from the support substrate, each of the pair of comb-shaped electrodes including electrode fingers.

A lead-free piezoelectric material includes perovskite-type metal oxide containing Na, Nb, Ba, Ti, and Mg and indicates excellent piezoelectric properties. The piezoelectric material satisfies the following relational expression (1): 0.430≤a≤0.460, 0.433≤b≤0.479, 0.040≤c≤0.070, 0.0125≤d≤0.0650, 0.0015≤e≤0.0092, 0.9×3e≤c−d≤1.1×3e, a+b+c+d+e=1, where a, b, c, d, and e denote the relative numbers of Na, Nb, Ba, Ti, and Mg atoms, respectively.

Examples include a device including a nanovoided polymer element having a first surface and a second surface, a first plurality of electrodes disposed on the first surface, a second plurality of electrodes disposed on the second surface, and a control circuit configured to apply an electrical potential between one or more of the first plurality of electrodes and one or more of the second plurality of electrodes to induce a physical deformation of the nanovoided polymer element.

A piezoelectric component that has a piezoelectric element including a piezoelectric ceramic layer and a sintered metal layer on at least a first main surface of the piezoelectric ceramic layer and containing a non-precious metal, and a protective layer containing an elastic body covering first and second opposed main surfaces of the piezoelectric element. The piezoelectric ceramic layer contains 90 mol % or more of a perovskite compound that contains niobium, an alkali metal, and oxygen. A thickness of the piezoelectric element is 100 μm or less.

A diaphragm for a piezoelectric micromachined ultrasonic transducer (PMUT) is presented having resonance frequency and bandwidth characteristics which are decoupled from one another into independent variables. Portions of at least the piezoelectric material layer and backside electrode layer are removed in a selected pattern to form structures, such as ribs, in the diaphragm which retains stiffness while reducing overall mass. The patterned structure can be formed by additive, or subtractive, fabrication processes.

A piezoelectric element includes a stack including a plurality of internal electrodes and a plurality of piezoelectric layers stacked on one another, and a surface electrode located on a side surface of the stack and connected to the plurality of internal electrodes. A second electrode illustrated in FIG. 3B includes a first conductor including a strip extending in a longitudinal direction and an extension having one end continuous with the strip and another end exposed on the side surface of the stack and connected to the surface electrode. The piezoelectric element includes a second conductor located between the extension and an opposite portion of the side surface of the stack opposite to a portion of the side surface on which the other end of the extension is exposed.

Various embodiments of the present disclosure are directed towards an integrated chip including a piezoelectric membrane overlying a substrate. A plurality of conductive layers is disposed within the piezoelectric membrane. The plurality of conductive layers comprises a first conductive layer over a second conductive layer. The first conductive layer comprises a first electrode and the second conductive layer comprises a second electrode. A first conductive via is disposed in the piezoelectric membrane and contacts the first electrode. A second conductive via is disposed in the piezoelectric membrane and contacts the second electrode. A sidewall of the second conductive via comprises a vertical sidewall segment overlying a slanted sidewall segment.

A piezoelectric thin film includes a first piezoelectric layer and a second piezoelectric layer directly stacked on the first piezoelectric layer. The first piezoelectric layer contains a tetragonal crystal 1 of a perovskite-type oxide. The second piezoelectric layer contains a tetragonal crystal 2 of a perovskite-type oxide. A (001) plane of the tetragonal crystal 1 is oriented in a normal direction do of a surface of the piezoelectric thin film. A (001) plane of the tetragonal crystal 2 is oriented in the normal direction dn of the surface of the piezoelectric thin film. An interval of the (001) plane of the tetragonal crystal 1 is c1, an interval of a (100) plane of the tetragonal crystal 1 is a1, an interval of the (001) plane of the tetragonal crystal 2 is c2, an interval of a (100) plane of the tetragonal crystal 2 is a2, c2/a2 is more than c1/a1 and c1/a1 is from 1.015 to 1.050.

A flexible vibration module is disclosed. The flexible vibration module includes a piezoelectric composite layer, including: a plurality of piezoelectric portions each having a piezoelectric characteristic, where at least two of the plurality of piezoelectric portions have different sizes; and a flexible portion between the plurality of piezoelectric portions.