An imaging system includes: a transceiver cell for generating a pressure wave and converting an external pressure wave into an electrical signal; and a control unit for controlling an operation of the transceiver cell. The transceiver cell includes: a substrate; at least one membrane suspending from the substrate; and a plurality of transducer elements mounted on the at least one membrane. Each of the plurality of transducer elements has a bottom electrode, a piezoelectric layer on bottom electrode, and at least one top electrode on the piezoelectric layer. Each of the plurality of transducer element generates a bending moment in response to applying an electrical potential across the bottom electrode and the at least one top electrode and develops an electrical charge in response to a bending moment due to the external pressure wave.

An imaging device includes a two dimensional array of piezoelectric elements. Each piezoelectric element includes: a piezoelectric layer; a bottom electrode disposed on a bottom side of the piezoelectric layer and configured to receive a transmit signal during a transmit mode and develop an electrical charge during a receive mode; and a first top electrode disposed on a top side of the piezoelectric layer; and a first conductor, wherein the first top electrodes of a portion of the piezoelectric elements in a first column of the two dimensional array are electrically coupled to the first conductor.

A liquid discharge head includes a nozzle plate, a substrate, a diaphragm, and a piezoelectric element. The nozzle plate includes a nozzle from which liquid is discharged. The substrate is disposed on the nozzle plate and includes a pressure chamber communicating with the nozzle. The diaphragm is disposed on a first side of the substrate opposite a second side of the substrate on which the nozzle plate is disposed, the diaphragm constituting one wall of the pressure chamber. The piezoelectric element is disposed on the diaphragm to deform the diaphragm to discharge liquid in the pressure chamber from the nozzle. The piezoelectric element includes a first electrode, a piezoelectric film, and a second electrode. The first electrode is disposed on the diaphragm. The piezoelectric film is disposed on the first electrode.

An apparatus for measuring a temperature of a power device using a piezoelectric device according to an exemplary embodiment of the present disclosure includes: a substrate; at least one power device formed on one surface of the substrate; and at least one piezoelectric device disposed on the substrate as spaced from the power device and configured to measure a thermal stress generated on the substrate to sense a temperature caused by heat generation of the power device.

A piezoelectric material, comprising: a piezoelectric self-assembling monolayer of oligopeptides; a conductive surface; and a substrate, wherein the conductive surface is located between the piezoelectric self-assembling monolayer of oligopeptides and the substrate. A touch sensitive device, comprising: a first piezoelectric material, comprising: a piezoelectric self-assembling monolayer of oligopeptides containing a dipole moment; a conductive surface; and a substrate; a second piezoelectric material, comprising: a piezoelectric self-assembling monolayer of oligopeptides containing a dipole moment; a conductive surface; and a substrate, wherein the oligopeptides making up the self-assembling monolayer of the first and second piezoelectric materials, respectively, have the same amino acid sequence but have an equal and opposite dipole moment.

A piezoelectric element includes a first electrode, a piezoelectric layer formed on the first electrode by a solution method and formed of a perovskite-type composite oxide including potassium, sodium, and niobium, and a second electrode provided on the piezoelectric layer, in which the composite oxide further includes lithium and manganese, the content of lithium is 3 mol % to 5 mol % in the total number of moles of metal in the A site, the content of manganese is 5 mol % or less in the total number of moles of metal in the B site, and a lithium measured intensity (CPS) maximum value in the film thickness direction of the piezoelectric layer in SIMS measurement is less than 2.65 times a minimum value.

A piezoelectric element includes a first electrode; a second electrode; and a piezoelectric layer arranged between the first electrode and the second electrode, in which the piezoelectric layer is a thin film that includes a perovskite-type composite oxide which includes potassium, sodium, and niobium and which is preferentially oriented in the (100) plane, and a crystal structure of the perovskite-type composite oxide includes a basic lattice structure having an oxygen octahedron and a super lattice structure in which the oxygen octahedron is tilted.

An electromechanical transducer element includes a first electrode, a second electrode, and a piezoelectric material. The piezoelectric material is disposed between the first electrode and the second electrode and deformable with a voltage applied in accordance with a drive signal. The piezoelectric material is made of a composite oxide having a perovskite structure preferentially oriented in at least one of a (100) plane and a (001) plane. A drop in diffraction intensity is included in a rocking curve corresponding to at least one of a (200) plane and a (002) plane measured at a position of 2? where the diffraction intensity is largest at a peak of diffraction intensity corresponding to the (200) plane out of peaks of diffraction intensity measured by an X-ray diffraction ?-2? method.

Disclosed is an acoustic sensor including a semiconductor chip comprising two or more transistors. At least two of the transistors are each connected to a piezoelectric thin film, and the piezoelectric thin film is directly or indirectly disposed over a semiconductor substrate such that a conduction state of each of the at least two transistors varies in response to a pressure of sound waves incident on the piezoelectric thin film, and the two or more transistors are connected to constitute a single amplifier circuit so as to add up and amplify a signal with a strength in response to the conduction state of each of the at least two transistors, and output the amplified signals.

A piezoelectric element is obtained using a method including: preparing a first structure; preparing a second structure; disposing a first facing electrode layer of the first structure to face a first surface of a vibration plate substrate and bonding the first structure to the first surface of the vibration plate substrate; processing the vibration plate substrate into a vibration plate by polishing or etching a second surface of the vibration plate substrate to which the first structure is bonded; preparing a laminate structure by disposing a second facing electrode layer of the second structure to face an exposed surface of the vibration plate and bonding the second structure to the vibration plate; and removing at least a part of a first silicon substrate of the first structure and a second silicon substrate of the second structure from the laminate structure.