The present disclosure provides a display module, which includes a silicon-based micro light emitting diode display panel and a heat dissipation device. The heat dissipation device includes a heat dissipation cavity disposed on a back surface of the silicon-based micro light emitting diode display panel and an electro-deformation member disposed on a cavity bottom of the heat dissipation cavity. In case that the electro-deformation member is powered on, the electro-deformation member deforms to avoid a channel causing an external environment to be in communication with the heat dissipation cavity, so that external air enters the heat dissipation cavity. External air has a relatively low temperature and can carry away 10 heat of the silicon-based micro light emitting diode display panel, so as to reduce a temperature of the silicon-based micro light emitting diode display panel, and improve a heat dissipation capability of the display module.

The piezoelectric body is configured to have a layered structure such that a plurality of unit layers are stacked in a film thickness direction, and each of the unit layers is formed of a first layer on which the displacement is relatively easy to occur, and a second layer which has a high concentration of Zr as compared with the first layer. In addition, when composition ratio Ti/(Zr+Ti) of Zr to Ti in each of the first layer and the second layer is set as Cr1 and Cr2, the composition ratio of each layer is adjusted so as to satisfy the following conditions (1) to (3).
0.41Cr10.81(1)
0.1Cr1Cr20.3(2)
Cr1>Cr2(3)

A method of manufacturing an electronic device including a film, including the steps of forming at least one layer of a solution including a solvent and a compound including a polymer selected from the group including poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)), poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene) (P(VDF-TrFE-CTFE)) and a mixture of these compounds, the molecular rate of chlorine in the copolymer being greater than or equal to 3%; and irradiating at least the layer with pulses of at least one ultraviolet radiation.

A multi-layered film includes a first electroconductive layer, a dielectric layer, and a second electroconductive layer, which are sequentially layered and disposed on a main surface of a substrate. A lower surface of the dielectric layer comes into contact with an upper surface of the first electroconductive layer, an upper surface and an side surface of the dielectric layer is coated with the second electroconductive layer, and an side end of a portion at which the first electroconductive layer directly overlaps the second electroconductive layer is located inside a side end of the substrate on the main surface of the substrate.

The present invention provides a contact electrification effect-based back gate field-effect transistor. The back gate field-effect transistor includes: a conductive substrate; an insulating layer formed on a front face of the conductive substrate; a field-effect transistor assembly including: a channel layer, a drain and a source, and a gate; and a triboelectric nanogenerator assembly including: a static friction layer formed at a lower surface of the gate, a movable friction layer disposed opposite to the static friction layer and separated by a preset distance, and a second electro-conductive layer formed at an outside of the movable friction layer and being electrically connected to the source; wherein, the static friction layer and the movable friction layer are made of materials in different ratings in triboelectric series, and the static friction layer and the movable friction layer are switchable between a separated state and a contact state under the action of an external force.

An ultrasonic transducer device includes a base, a first electrode film, a piezoelectric film, a second electrode film and a first conductive film. The base has a plurality of vibrating film portions arranged in an array pattern. The first electrode film is disposed on each of the vibrating film portions. The piezoelectric film is disposed on the first electrode film. The second electrode film is disposed on the piezoelectric film. The first conductive film is connected to the first electrode film. The first conductive film has a film thickness larger than a film thickness of the first electrode film.

A method of manufacturing a piezoelectric element includes: forming a patterned mask layer over a substrate, in which the patterned mask layer has an opening exposing a portion of the substrate; forming a piezoelectric element in the opening; and removing the patterned mask layer to obtain the piezoelectric element, in which the piezoelectric element has a central portion and a peripheral portion adjacent to the central portion, and the peripheral portion has a maximum height greater than a height of the central portion.

A piezoelectric element includes: a piezoelectric body; and a vibrating plate including single crystal silicon having anisotropy having orientation with a relatively high Young's modulus and orientation with a relatively low Young's modulus (hereinafter, referred to as low Young's modulus orientation) as a vibrating material, in which the piezoelectric body and the vibrating plate are laminated on each other so that the low Young's modulus orientation is in a direction along a high expansion and contraction direction among a direction where a degree of expansion and contraction caused according to a support structure of the piezoelectric body is relatively high (hereinafter, referred to as high expansion and contraction direction) and a direction where a degree thereof is relatively low.

Disclosed is a method of fabricating an electromechanical transducer film. The method includes treating a surface of a first electrode to be liquid-repellent, the first electrode being formed on one surface of a substrate, irradiating the surface of the first liquid-repellent electrode with an energy ray while moving an irradiation position in accordance with a shape of the electromechanical transducer film to be formed and a shape of an alignment mark to be formed, and forming the alignment mark by applying an application liquid to an area including a portion irradiated with the energy ray in accordance with the shape of the alignment mark in the irradiating step, the application liquid being applied by an inkjet method.

An electromechanical transducer element includes a first electrode, an electromechanical transducer film, and a second electrode. The electromechanical transducer film is a {100} preferentially oriented polycrystalline film. A sum of an orientation degree {111} of {111} plane and an orientation degree {100} of {100} plane is in a range of not less than 0.0002 and not greater than 0.25. At least two diffraction peaks of a plurality of diffraction peaks separated in diffraction peaks derived from {200} plane or {400} plane obtained by the -2 measurement of the electromechanical transducer film according to the X-ray diffraction method attribute to a tetragonal a-domain structure and a tetragonal c-domain structure, respectively. A value of Sc/(Sa+Sc) is not greater than 20%, where Sa represents an area of a diffraction peak attributing to the tetragonal a-domain structure and Sc represents an area of a diffraction peak attributing to the tetragonal c-domain structure.