H10N30/80

Mobile phone and other compute device cooling architecture

A system for cooling a mobile phone and method for using the system are described. The system includes an active piezoelectric cooling system, a controller and an interface. The active piezoelectric cooling system is configured to be disposed in a rear portion of the mobile phone distal from a front screen of the mobile phone. The controller is configured to activate the active piezoelectric cooling system in response to heat generated by heat-generating structures of the mobile phone. The interface is configured to receive power from a mobile phone power source when the active piezoelectric cooling system is activated.

High-power-density piezoelectric energy harvesting system

Various embodiments include a mechanical amplification mechanism in a compact power unit of an electricity generator containing at least one piezoelectric element. The power units can be used singly but are also designed to be stacked, serially and/or in parallel with each other, and to be mounted within or under a substrate (e.g., a roadway or aircraft runway) such that the system achieves ultra-high-density of electricity production per unit area. Embodiments of the disclosed subject matter are therefore directed to a mechanical-to-electrical power generator, an accompanying power electronic-circuit, and power transmission and/or power saving into an energy-storage device. Therefore, the generated electrical power can be conditioned for, for example, transmitting to an electrical grid or for charging batteries of electrical vehicles. Other methods of formation of the power units and related systems are disclosed.

Piezoelectric element, piezoelectric actuator, ultrasonic probe, ultrasonic apparatus, electronic apparatus, liquid jet head, and liquid jet apparatus
11800809 · 2023-10-24 · ·

A piezoelectric element includes a first electrode layer, a piezoelectric layer, and a second electrode layer. The first electrode layer, the piezoelectric layer, and the second electrode layer are stacked in sequence on one another. The first electrode layer has a first part overlapping the piezoelectric layer in a plan view, and a second part at least partially separated from the first part and not overlapping the piezoelectric layer in the plan view. The second electrode layer has a third part overlapping the piezoelectric layer in the plan view, and a fourth part separated from the third part. The fourth part is in contact with the first part and the second part.

Oral Care Device
20230355966 · 2023-11-09 · ·

An oral care device for placement in the oral cavity. The oral care device may include a support component, a piezoelectric component, and/or sensor and/or a therapeutic element. The support component is configured for placement between one or more maxillary teeth and one or more mandibular teeth. The piezoelectric element is configured to generate electrical energy from relative movement of the maxillary teeth and the mandibular teeth. The sensor is configured to sense a condition in the oral cavity. The therapeutic element is configured to release a therapeutic into the oral cavity. The device may include any one or any combination of the piezoelectric component, the therapeutic element, and the sensor.

Vibration device
11818958 · 2023-11-14 · ·

A vibration device includes a semiconductor substrate having a first surface and a second surface, an integrated circuit disposed on the first surface, a first terminal which is disposed on the second surface and to which a substrate potential is applied, a second terminal which is disposed on the second surface and to which a potential different from the substrate potential is applied, a first through electrode which is configured to electrically couple the first terminal and the integrated circuit to each other, a second through electrode which is configured to electrically couple the second terminal and the integrated circuit to each other, a frame which has an insulating property, a vibration element disposed on the first surface, and a lid bonded to the first surface, wherein the first through electrode is located outside the frame, and the second through electrode is located inside the frame.

TRANSDUCERS, THEIR METHODS OF MANUFACTURE AND USES

There is disclosed a transducer and a method for generating the transducer. The transducer is formed on a substrate layer. The transducer includes a first electrode layer, a first piezoelectric layer on the first electrode layer, and a second electrode layer on the first piezoelectric layer. The first electrode layer is connected to a first electrical connector and the second electrode layer is connected to a second electrical connector. The transducer can be configured to act as an acoustic sensor or an electric potential sensor.

Ultrasonic device and manufacturing method of ultrasonic device

An ultrasonic device includes an ultrasonic sensor, a wiring member, and a housing, in which the wiring member has a covered wire that covers a signal line coupled to the ultrasonic sensor via an insulating layer, and a conductive member that is electrically coupled with the covered wire, the housing has a plurality of housing components having conductivity, and covers the ultrasonic sensor with the plurality of housing components, and the conductive member is electrically coupled to and held by the plurality of housing components.

METHOD FOR MANUFACTURING SEMICONDUCTOR MODULE INCLUDING PIEZOELECTRIC LAYER
20230363278 · 2023-11-09 ·

A method for manufacturing a semiconductor module is provided. The method includes: providing a substrate, wherein the substrate comprises a front side and at least one semiconductor element formed on the front side; forming a shielding structure on the at least one semiconductor element; forming a piezoelectric layer on the shielding structure.

METHOD FOR MANUFACTURING SEMICONDUCTOR MODULE INCLUDING PIEZOELECTRIC LAYER
20230363278 · 2023-11-09 ·

A method for manufacturing a semiconductor module is provided. The method includes: providing a substrate, wherein the substrate comprises a front side and at least one semiconductor element formed on the front side; forming a shielding structure on the at least one semiconductor element; forming a piezoelectric layer on the shielding structure.

TORSIONAL MODE QUARTZ CRYSTAL DEVICE
20230353121 · 2023-11-02 ·

The disclosed technology generally relates to quartz crystal devices and more particularly to quartz crystal devices configured to vibrate in torsional mode. In one aspect, a quartz crystal device configured for temperature sensing comprises a fork-shaped quartz crystal comprising a pair of elongate tines laterally extending from a base region in a horizontal lengthwise direction of the fork-shaped quartz crystal. Each of the tines has formed on one or both of opposing sides thereof a vertically protruding line structure laterally elongated in the horizontal lengthwise direction. The quartz crystal device further comprises a first electrode and a second electrode formed on the one or both of the opposing sides of each of the tines and configured such that, when an electrical bias is applied between the first and second electrodes, the fork-shaped quartz crystal vibrates in a torsional mode in which each of the tines twists about a respective axis extending in the horizontal lengthwise direction.