Disclosed are a BCTZ-based lead-free piezoelectric ceramic composition and a method of preparing a BCTZ-based lead-free piezoelectric ceramic which provide high piezoelectric properties and speaker characteristics. The method of preparing a lead-free piezoelectric ceramic includes preparing a mixture in which copper oxide is added to a BCTZ-based base material and sintering the mixture at a temperature of 1300? C. to 1600? C. for 1 to 5 hours, wherein a weight ratio of the copper oxide in the mixture is 0.6 wt %.

The present disclosure relates to a wide-range perpendicular sensitive magnetic sensor and the method for manufacturing the same, the magnetic sensor includes a substrate, a plurality of magnetic tunnel junctions, a plurality of magnetic flux regulators, a first output port and a second output port.

The present disclosure relates to a wide-range perpendicular sensitive magnetic sensor and the method for manufacturing the same, the magnetic sensor includes a substrate, a plurality of magnetic tunnel junctions, a plurality of magnetic flux regulators, a first output port and a second output port.

Disclosed in the embodiments of the present invention are a laser writing apparatus and method for programming magnetoresistive devices. The apparatus comprises: a substrate, a magnetoresistive sensor and a thermal control layer which are sequentially arranged in a stacked manner. A non-magnetic insulating layer for electrical isolation is provided between the magnetoresistive sensor and the thermal control layer. The magnetoresistive sensor is composed of a magnetoresistive sensing unit which is a multilayer thin-film stacked structure containing an anti-ferromagnetic layer. The laser writer programming apparatus is used during the laser writer programming phase, along with varied parameters of the thermal control layers and/or magnetoresistive sensors, to change the thermal gradient produced by the laser on the magnetoresistive sensor, to increase or decrease the temperature change of the magnetoresistive sensor at the same laser power, and the film parameters use d to do this include material composition and film thickness. Through the embodiments of this invention, high precision laser programming of a magneotresistive sensor is obtained, with improved magnetoresistive sensor manufacturability, improved magnetoresistive sensor noise performance, and with improved magnetoresistive sensor detectability.

Disclosed in the embodiments of the present invention are a laser writing apparatus and method for programming magnetoresistive devices. The apparatus comprises: a substrate, a magnetoresistive sensor and a thermal control layer which are sequentially arranged in a stacked manner. A non-magnetic insulating layer for electrical isolation is provided between the magnetoresistive sensor and the thermal control layer. The magnetoresistive sensor is composed of a magnetoresistive sensing unit which is a multilayer thin-film stacked structure containing an anti-ferromagnetic layer. The laser writer programming apparatus is used during the laser writer programming phase, along with varied parameters of the thermal control layers and/or magnetoresistive sensors, to change the thermal gradient produced by the laser on the magnetoresistive sensor, to increase or decrease the temperature change of the magnetoresistive sensor at the same laser power, and the film parameters use d to do this include material composition and film thickness. Through the embodiments of this invention, high precision laser programming of a magneotresistive sensor is obtained, with improved magnetoresistive sensor manufacturability, improved magnetoresistive sensor noise performance, and with improved magnetoresistive sensor detectability.

This invention relates to an operational element and a method for manufacturing the operational element that comprises magnetic shape memory alloy. in the method at least a part of the magnetic shape memory alloy is arranged as an active region that is responsive to a magnetic field and at least one other part of the magnetic shape memory alloy is arranged as an inactive region that is unresponsive to a magnetic field.

This invention relates to an operational element and a method for manufacturing the operational element that comprises magnetic shape memory alloy. in the method at least a part of the magnetic shape memory alloy is arranged as an active region that is responsive to a magnetic field and at least one other part of the magnetic shape memory alloy is arranged as an inactive region that is unresponsive to a magnetic field.

The present disclosure relates to a wide-range perpendicular sensitive magnetic sensor and the method for manufacturing the same, the magnetic sensor includes a substrate, a plurality of magnetic tunnel junctions, a plurality of magnetic flux regulators, a first output port and a second output port.

The present disclosure relates to a wide-range perpendicular sensitive magnetic sensor and the method for manufacturing the same, the magnetic sensor includes a substrate, a plurality of magnetic tunnel junctions, a plurality of magnetic flux regulators, a first output port and a second output port.

Methods of etching metal by depositing a material reactive with a metal to be etched and a halogen to form a volatile species and exposing the substrate to a halogen-containing gas and activation gas to etch the substrate are provided. Deposited materials may include silicon, germanium, titanium, carbon, tin, and combinations thereof. Methods are suitable for fabricating MRAM structures and may involve integrating ALD and ALE processes without breaking vacuum.