A semiconductor device comprising a passive magnetoelectric transducer structure adapted for generating a charge via mechanical stress caused by a magnetic field. The first transducer structure has a first terminal electrically connectable to the control terminal of an electrical switch, and having a second terminal electrically connectable to the first terminal of the electrical switch for providing a control signal for opening/closing the switch. The switch may be a FET. A passive magnetic switch using a magnetoelectric transducer structure. Use of a passive magnetoelectric transducer structure for opening or closing a switch without the need for an external power supply.

The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

The present invention provides a magnetostrictive member with high performance, high reliability and high versatility. The magnetostrictive member is used in the vibration power generation as a power source for extracting electric energy from various vibrations. The member made of the single crystal is manufactured cheaper than the conventional manufacturing method. The magnetostrictive member is formed by cutting a single crystal of FeGa alloy by using electric discharge machining in a state that <100> orientation of the crystal of the FeGa alloy is aligned in a direction in which magnetostriction of the magnetostrictive member is required.

The invention provides equipment for manufacturing a torque sensor shaft by forming a magnetostrictive region including a metallic glass coating in a predetermined pattern on a side face of a shaft-shaped workpiece. The shaft-shaped workpiece is rotatably attached on a conveying pallet. The conveying pallet is successively conveyed to each of work devices including a preheating device for the shaft-shaped workpiece, a thermal spraying device for forming a metallic glass coating on a side face of the shaft-shaped workpiece, a masking device configured to provide a covering corresponding to the pattern on the coating, and a shot blasting device configured to provide shot blasting directed toward the metallic glass coating including the covering. Preheating, thermal spraying, masking, and shot blasting are performed respectively on the shaft-shaped workpiece while rotating the shaft-shaped workpiece on the conveying pallet at each of the work devices. Therefore, the favorable manufacturing equipment can be provided.

Nano-actuators having a helical member formed with a ferromagnetic shape memory alloy (FSMA) are disclosed that are elastically deformable between a compressed state and an expanded state by the application of a magnetic field. The nano-actuators may include a ferromagnetic head portion, that may be formed from the FSMA or from another material. A thin biocompatible external layer provides a platform for attaching a ligand that is selected to bind with a target cell type, for example, a target cancer cell. The nano-actuators are magnetically propelled to the target cells, and oscillated and/or rotated to mechanically damage the target cells to induce apoptosis. The nano-actuators may be formed by electro deposition of the FSMA into a nano-helical template.

Provided is a display device. The display device includes a display panel, a contact sensitive device on the display panel, and a linear polarizer on the contact sensitive device. The contact sensitive device includes an electro-active layer which is uniaxially elongated and configured to retard a phase of incident light. Since the display device includes the contact sensitive device having the electro-active layer configured to retard the phase of the incident light, a separate phase retardation film for suppressing external light reflection may be omitted. As a result, the thickness of the display device may be decreased and manufacturing cost of the display device may be reduced.

The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

A method of manufacturing a magnetostrictive torque sensor shaft (100) to which a sensor portion (2) of a magnetostrictive torque sensor (1) is mounted. The method includes heat treatment step of subjecting an iron-based shaft member to a carburizing, quenching, and tempering process, and a shot peening step of performing shot peening using a boron-free zirconia shot media having a Vickers hardness at least equal to 1100 and at most equal to 1300, at least in a position on the shaft member, after the heat treatment step, to which the sensor portion is to be attached. The surface of the shaft member, after shot peening, has a total error, including hysteresis error and angle error, of not more than 3%.

An improved magnetic tunnel junction with two oxide interfaces on each side of a ferromagnetic layer (FML) leads to higher PMA in the FML. The novel stack structure allows improved control during oxidation of the top oxide layer. This is achieved by the use of a FML with a multiplicity of ferromagnetic sub-layers deposited in alternating sequence with one or more non-magnetic layers. The use of non-magnetic layers each with a thickness of 0.5 to 10 Angstroms and with a high resputtering rate provides a smoother FML top surface, inhibits crystallization of the FML sub-layers, and reacts with oxygen to prevent detrimental oxidation of the adjoining ferromagnetic sub-layers. The FML can function as a free or reference layer in an MTJ. In an alternative embodiment, the non-magnetic material such as Mg, Al, Si, Ca, Sr, Ba, and B is embedded by co-deposition or doped in the FML layer.

An improved magnetic tunnel junction with two oxide interfaces on each side of a ferromagnetic layer (FML) leads to higher PMA in the FML. The novel stack structure allows improved control during oxidation of the top oxide layer. This is achieved by the use of a FML with a multiplicity of ferromagnetic sub-layers deposited in alternating sequence with one or more non-magnetic layers. The use of non-magnetic layers each with a thickness of 0.5 to 10 Angstroms and with a high resputtering rate provides a smoother FML top surface, inhibits crystallization of the FML sub-layers, and reacts with oxygen to prevent detrimental oxidation of the adjoining ferromagnetic sub-layers. The FML can function as a free or reference layer in an MTJ. In an alternative embodiment, the non-magnetic material such as Mg, Al, Si, Ca, Sr, Ba, and B is embedded by co-deposition or doped in the FML layer.