Patent classifications
H10N35/01
Magnetostrictive position sensor with detector coil in a chip
To reduce the construction effort and also to make it smaller, the detector coil (6) is formed in the detector head (7) of a magnetostrictive position sensor (100) in a semiconductor chip (2), in which at the same time also the evaluation circuit (16) is formed andif biased electrically and by means of direct currentalso the then necessary separate bias coil (18).
Magnetostrictive position sensor with detector coil in a chip
To reduce the construction effort and also to make it smaller, the detector coil (6) is formed in the detector head (7) of a magnetostrictive position sensor (100) in a semiconductor chip (2), in which at the same time also the evaluation circuit (16) is formed andif biased electrically and by means of direct currentalso the then necessary separate bias coil (18).
Heterostructure and method of fabrication
The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.
Sensors including dummy elements arranged about a sensing element
Structures for a sensor and methods of forming such structures. A sensing element includes a free magnetic layer, a pinned magnetic layer, and a non-magnetic conductive spacer layer between the free magnetic layer and the pinned magnetic layer. A dummy element is positioned outside of an outer boundary of the sensing element. The dummy element is detached from the sensing element.
HETEROSTRUCTURE AND METHOD OF FABRICATION
The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.
MAGNETOSTRICTIVE ELEMENT AND METHOD FOR MANUFACTURING SAME
A magnetostrictive element that can exhibit a sufficiently large magnetostriction amount in a longitudinal direction is formed of a single crystal alloy magnetostrictive material. The magnetostrictive element has a shape of a plate-shaped rectangular parallelepiped, a main plane of the plate-shaped rectangular parallelepiped includes a plurality of magnetic domains that are regions where atomic magnetic moments are arranged in the same direction and whose width is 10 m to 200 m, and a total area rate of a magnetic domain where an angle difference between a lateral direction of the main plane and a direction of the magnetic moments of the magnetic domain is 10 or less to the main plane is 60% to 100%.
Method of fabricating a shape-changeable magnetic member, method of producing a shape changeable magnetic member and shape changeable magnetic member
The present invention relates to a method of fabricating a shape-changeable magnetic member comprising a plurality of segments with each segment being able to be magnetized with a desired magnitude and orientation of magnetization, to a method of producing a shape changeable magnetic member composed of a plurality of segments and to a shape changeable magnetic member.
Dry plasma etch method to pattern MRAM stack
Apparatuses for etching metal by depositing a material reactive with a metal to be etched and a halogen to form a volatile species and exposing the substrate to a halogen-containing gas and activation gas to etch the substrate are provided. Deposited materials may include silicon, germanium, titanium, carbon, tin, and combinations thereof. Apparatuses are suitable for fabricating MRAM structures and may be used to integrate ALD and ALE processes without breaking vacuum.
FLEXIBLE TACTILE ACTUATOR
Disclosed is a flexible tactile actuator including a tactile transmitter configured to be flexible and including magnetic particles capable of being polarized in response to an external magnetic field and a matrix layer including the magnetic particles, a magnetic field generator disposed below the tactile transmitter and configured to generate a magnetic field in the tactile transmitter, and an elastic member provided in a shape of a film, having at least a portion in surface contact with the magnetic field generator, and attached to be in surface contact with one of a top surface and a bottom surface of the tactile transmitter.
METHOD OF FABRICATING A SHAPE-CHANGEABLE MAGNETIC MEMBER, METHOD OF PRODUCING A SHAPE CHANGEABLE MAGNETIC MEMBER AND SHAPE CHANGEABLE MAGNETIC MEMBER
A method of fabricating a shape-changeable magnetic member comprising a plurality of segments with each segment being able to be magnetized with a desired magnitude and orientation of magnetization, to a method of producing a shape changeable magnetic member composed of a plurality of segments and to a shape changeable magnetic member.