A piezoelectric cooling system and method for driving the cooling system are described. The piezoelectric cooling system includes a first piezoelectric cooling element and a second piezoelectric cooling element. The first piezoelectric cooling element is configured to direct a fluid toward a surface of a heat-generating structure. The second piezoelectric cooling element is configured to direct the fluid to an outlet area after heat has been transferred to the fluid by the heat-generating structure.

A cooling system and method for using the cooling system are described. The cooling system includes an array of cooling elements and a controller. The array of cooling elements corresponds to regions of the heat-generating structure where heat is generated in response to operation of the semiconductor. The controller is configured to activate portions of the array of cooling elements based on a determination that operation of the heat-generating structure is likely to generate heat in a given region of the heat-generating structure.

An active cooling system and method for using the active cooling system are described. The active cooling system includes a cooling element having a first side and a second side. The first side of the cooling element is distal to a heat-generating structure and in communication with a fluid. The second side of the cooling element is proximal to the heat-generating structure. The cooling element is configured to direct the fluid using a vibrational motion from the first side of the cooling element to the second side such that the fluid moves in a direction that is incident on a surface of the heat-generating structure at a substantially perpendicular angle and then is deflected to move along the surface of the heat-generating structure to extract heat from the heat-generating structure.

A system for cooling a mobile phone and method for using the system are described. The system includes an active piezoelectric cooling system, a controller and an interface. The active piezoelectric cooling system is configured to be disposed in a rear portion of the mobile phone distal from a front screen of the mobile phone. The controller is configured to activate the active piezoelectric cooling system in response to heat generated by heat-generating structures of the mobile phone. The interface is configured to receive power from a mobile phone power source when the active piezoelectric cooling system is activated.

A semiconductor structure includes a recess extending into a substrate and an inductor device including a first isolation layer, a first magnetic layer over the first isolation layer, a second isolation layer over the first magnetic layer, and a conductive element surrounded by the second isolation layer, wherein at least a portion of the inductor device is disposed within the recess. A method of manufacturing a semiconductor structure includes disposing a first isolation layer on a surface of a substrate and extending into a recess formed on the surface; disposing a first magnetic layer over the first isolation layer; disposing a second isolation layer over the first magnetic layer to form a trench; disposing a conductive element in the trench; disposing a third isolation layer over the first magnetic layer, the conductive element and the second isolation layer; and disposing a second magnetic layer over the third isolation layer.

A semiconductor device includes a substrate, a high-Q capacitor, an ultra high density capacitor, and an interconnection. At least one trench is formed in the substrate. The high-Q capacitor is disposed on a surface of the substrate, and includes a bottom electrode, an upper electrode located on the bottom electrode, and a first dielectric layer located between the upper and bottom electrodes. The ultra high density capacitor is disposed on the trench of the substrate, and includes a first electrode conformally deposited in the trench, a second electrode located on the first electrode, and a second dielectric layer located between the first and second electrodes. The interconnection connects one of the upper electrode and the bottom electrode to one of the first electrode and the second electrode, and connects the other of the upper electrode and the bottom electrode to the other of the first electrode and the second electrode.

The invention relates generally to electroactive material actuators (and combined sensor-actuators) having embedded magnetic particles for facilitating enhanced actuation and/or sensing effects.

The disclosure belongs to the technical field of additive manufacturing, and discloses a flexible piezoelectric sensor based on 4D printing and a preparation method thereof. The sensor includes a magnetic part and a conductive part, wherein: the conductive part includes two substrates disposed opposite to each other and a spiral structure disposed between the two substrates. Both the two substrates and the spiral structure are made of conductive metal materials. The magnetic part has a flexible porous structure and is arranged between the two substrates to generate a magnetic field. When the substrate is subjected to external pressure, the spiral structure and the magnetic part are compressed simultaneously, the magnetic flux passing through the spiral structure changes, and the voltage of the two substrates changes, by measuring the voltage change of the two substrates to reflect the change of external pressure, the pressure measuring process is achieved.

The disclosure belongs to the technical field of additive manufacturing, and discloses a flexible piezoelectric sensor based on 4D printing and a preparation method thereof. The sensor includes a magnetic part and a conductive part, wherein: the conductive part includes two substrates disposed opposite to each other and a spiral structure disposed between the two substrates. Both the two substrates and the spiral structure are made of conductive metal materials. The magnetic part has a flexible porous structure and is arranged between the two substrates to generate a magnetic field. When the substrate is subjected to external pressure, the spiral structure and the magnetic part are compressed simultaneously, the magnetic flux passing through the spiral structure changes, and the voltage of the two substrates changes, by measuring the voltage change of the two substrates to reflect the change of external pressure, the pressure measuring process is achieved.

A magnetoresistive stack includes a fixed magnetic region, one or more dielectric layers disposed on and in contact with the fixed magnetic region, and a free magnetic region disposed above the one or mom dielectric layers. The fixed magnetic region may include a first ferromagnetic region, a coupling layer, a second ferromagnetic region, a transition layer disposed, a reference layer, and at least one interfacial layer disposed above the second ferromagnetic region. Another interfacial layer may be disposed between the one or more dielectric layers and the free magnetic region.