In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.

Disclosed is an electric field-controlled magnetoresistive random-access memory (MRAM) including memory cells. The memory cell has a heterogenous double tunnel junction structure including a first tunnel junction and a second tunnel junction. The first tunnel junction includes a magnetic tunnel junction layer having a magnetization direction that changes according to spin transfer torque when an external voltage is applied, and the second tunnel junction includes an electric-field control layer that controls an electric field applied to the magnetic tunnel junction layer to induce a change in magnetic anisotropy within the magnetic tunnel junction layer. The heterogeneous tunnel junction structure combines electric field-controlled magnetic anisotropy and spin transfer torque to enable low power driving of memory cells, thereby enabling a high energy-efficient electric field-controlled MRAM.

An electronic device may include a semiconductor memory, and the semiconductor memory may include a substrate; a variable resistance element formed over the substrate and exhibiting different resistance values representing different digital information, the variable resistance element including a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; and a blocking layer disposed on at least sidewalls of the variable resistance element, wherein the blocking layer may include a layer that is substantially free of nitrogen, oxygen or a combination thereof.

Provided is a simplified driving method of a synapse circuit. In a case where a first pre-spike pulse precedes a first post-spike pulse, a second pre-spike pulse from an input circuit 20a is used as a time window that allows writing of a coupling weight, and the first post-spike pulse from a neuron circuit 17 is used as a write pulse for controlling a write timing of the coupling weight. In a case where the first post-spike pulse precedes the first pre-spike pulse, a second post-spike pulse from the neuron circuit 17 is used as the time window, and the first pre-spike pulse from the input circuit 20a is used as the write pulse. The second pre-spike pulse and the second post-spike pulse are output in synchronization with the first pre-spike pulse and the first post-spike pulse, respectively.

Semiconductor device includes pair of active devices, composite spin Hall electrode, and a magnetic tunnel junction. Composite spin Hall electrode is electrically connected to pair of active devices. Magnetic tunnel junction is disposed on opposite side of composite spin hall electrode with respect to pair of active devices. Spin Hall electrode includes pair of heavy metal layers, and spacer layer disposed in between pair of heavy metal layers. Pair of heavy metal layers is made of a heavy metal in a metastable state. Spacer layer comprises first material different from the pair of heavy metal layers.

A magnetic sensor includes: a sensitive layer made of a soft magnetic material with uniaxial magnetic anisotropy, the sensitive layer being configured to sense a magnetic field by a magnetic impedance effect; and a magnet layer made of a magnetized hard magnetic material and disposed to face the sensitive layer. The magnet layer is configured to apply a DC magnetic bias Hb in a direction intersecting a direction of the uniaxial magnetic anisotropy in the sensitive layer, the DC magnetic bias Hb having a greater value than an anisotropic magnetic field Hk of the sensitive layer.

Provided are a magnetic tunneling junction device having more stable perpendicular magnetic anisotropy (PMA) and/or increased operating speed, and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal/ The second oxide layer includes ZO.sub.x which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.

Provided are a magnetic tunneling junction device having a fast operating speed without reducing or with increasing data retention and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a first free layer adjacent to the first oxide layer and a second free layer adjacent to the second oxide layer. The first free layer includes a magnetic material not doped with a non-magnetic metal, and the second free layer includes a magnetic material doped with the non-magnetic metal.

One or more semiconductor processing tools may deposit one or more tantalum nitride layers on an upper surface of a copper interconnect and within a via. The one or more semiconductor processing tools may deposit an adhesion layer on an upper surface of the one or more tantalum nitride layers and within the via. The one or more semiconductor processing tools may deposit tungsten on an upper surface of the adhesion layer and within the via for via interconnection of the magnetic tunnel junction to the copper interconnect.

The present disclosure provides a method for characterizing magnetic properties of a target layer, including providing a first sample having a first structure, providing a second sample having a target layer over the first structure, obtaining a first magnetic property of the first sample, obtaining a second magnetic property of the second sample, and deriving a third magnetic property of the target layer according to the first magnetic property and the second magnetic property.