The present invention relates to an electronic device comprising: a first electrode comprising a contact, a ferroelectric subassembly having a ferroelectric polarization, a spin polarization subassembly which spin-polarizes an incident current and comprises a layer of ferromagnetic or ferrimagnetic material, an interfacing subassembly which is arranged between the two subassemblies and converts the spin current into a charge current, the ferroelectric subassembly and the interfacing subassembly having a contact, and a second electrode which comprises two contacts and delimits the polarization subassembly, the contact of the first electrode changing the state of polarization by applying a potential difference between this contact and another contact.

The present invention relates to an electronic device comprising: a first electrode comprising a contact, a ferroelectric subassembly having a ferroelectric polarization, a spin polarization subassembly which spin-polarizes an incident current and comprises a layer of ferromagnetic or ferrimagnetic material, an interfacing subassembly which is arranged between the two subassemblies and converts the spin current into a charge current, the ferroelectric subassembly and the interfacing subassembly having a contact, and a second electrode which comprises two contacts and delimits the polarization subassembly, the contact of the first electrode changing the state of polarization by applying a potential difference between this contact and another contact.

An electronic system includes an electronic device having a stack of layers, the stack including a first electrode, a subassembly with electrically controllable remanent states, a two-dimensional electron gas, a magnetic subassembly comprising at least one magnetic layer, and a second electrode having two first contacts and a second contact. The system also includes a writing device writing remanent states by applying an electric field between the two electrodes, and a Hall-effect reading device reading the remanent state by applying a current between the two first contacts and by measuring the voltage between the second contact and a reference potential.

An electronic system includes an electronic device having a stack of layers, the stack including a first electrode, a subassembly with electrically controllable remanent states, a two-dimensional electron gas, a magnetic subassembly comprising at least one magnetic layer, and a second electrode having two first contacts and a second contact. The system also includes a writing device writing remanent states by applying an electric field between the two electrodes, and a Hall-effect reading device reading the remanent state by applying a current between the two first contacts and by measuring the voltage between the second contact and a reference potential.

A spin logic device includes: a first conductive layer formed of a nonmagnetic conductive material and having one end receiving first current as an input; a ferromagnetic layer having magnetic anisotropy and having one end opposing the other end of the first conductive layer; and an antiferroelectric layer disposed between the other end of the first conductive layer and the one end of the ferromagnetic layer. A magnetization direction of the ferromagnetic layer may be determined based on a current direction of the first current of the first conductive layer.

A spin logic device includes: a first conductive layer formed of a nonmagnetic conductive material and having one end receiving first current as an input; a ferromagnetic layer having magnetic anisotropy and having one end opposing the other end of the first conductive layer; and an antiferroelectric layer disposed between the other end of the first conductive layer and the one end of the ferromagnetic layer. A magnetization direction of the ferromagnetic layer may be determined based on a current direction of the first current of the first conductive layer.

A magnetic memory device includes a substrate, a thermally stable nitride seed layer substantially oriented in a (001) direction above the substrate, a chemical templating layer above the thermally stable nitride seed layer, and a magnetic layer above the chemical templating layer. The chemical templating layer includes a binary alloy having a CsCl prototype structure, and the magnetic layer includes a Heusler compound having perpendicular magnetic anisotropy (PMA).

A magnetic memory device includes a substrate, a thermally stable nitride seed layer substantially oriented in a (001) direction above the substrate, a chemical templating layer above the thermally stable nitride seed layer, and a magnetic layer above the chemical templating layer. The chemical templating layer includes a binary alloy having a CsCl prototype structure, and the magnetic layer includes a Heusler compound having perpendicular magnetic anisotropy (PMA).

A data reader may be configured with at least a detector stack positioned on an air bearing surface and consisting of a spin accumulation channel continuously extending from the air bearing surface to an injector stack. The injector stack can have at least one cladding layer contacting the spin accumulation channel. The at least one cladding layer may have a length as measured perpendicular to the ABS that filters minority spins from the detector stack.

We describe a method of detecting a voltage from a spin-current, the spin-current comprising a current having a spin predominantly aligned in a spin direction, the method comprising: flowing the spin current through a layer of organic material in a vertical direction through the layer; and detecting an electric field in a lateral direction in the layer of organic material. In a preferred embodiment the organic layer is anisotropic and has a higher electrical conductivity in the lateral direction than in the vertical direction.