A method of controlling a trajectory of a perpendicular magnetization switching of a ferromagnetic layer using spin-orbit torques in the absence of any external magnetic field includes: injecting a charge current J.sub.e through a heavy-metal thin film disposed adjacent to a ferromagnetic layer to produce spin torques which drive a magnetization M out of an equilibrium state towards an in-plane of a nanomagnet; turning the charge current J.sub.e off after t.sub.e seconds, where an effective field experienced by the magnetization of the ferromagnetic layer H.sub.eff is significantly dominated by and in-plane anisotropy H.sub.kx, and where M passes a hard axis by precessing around the H.sub.eff; and passing the hard axis, where H.sub.eff is dominated by a perpendicular-to-the-plane anisotropy H.sub.kz, and where M is pulled towards the new equilibrium state by precessing and damping around H.sub.eff, completing a magnetization switching.

A magnetic memory device includes a magnetic tunneling junction (MTJ) stack and a capping layer on the MTJ stack. The MTJ stack includes a reference layer, a tunneling barrier layer on the reference layer, and a free layer on the tunneling barrier layer. The capping layer includes a metal under layer that is in direct contact with the free layer, an oxide capping layer on the metal under layer, and a metal protection layer on the oxide capping layer.

A magnetic memory device includes a magnetic tunneling junction (MTJ) stack and a capping layer on the MTJ stack. The MTJ stack includes a reference layer, a tunneling barrier layer on the reference layer, and a free layer on the tunneling barrier layer. The capping layer includes a metal under layer that is in direct contact with the free layer, an oxide capping layer on the metal under layer, and a metal protection layer on the oxide capping layer.

A magnetic memory device includes a reference magnetic pattern and a free magnetic pattern stacked on a substrate, a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, a first non-magnetic pattern on the free magnetic pattern, the free magnetic pattern being between the tunnel barrier pattern and the first non-magnetic pattern, a second non-magnetic pattern on the first non-magnetic pattern, the first non-magnetic pattern being between the free magnetic pattern and the second non-magnetic pattern, a metal pattern between the first non-magnetic pattern and the second non-magnetic pattern, and a conductive layer on a side surface of the first non-magnetic pattern.

A magnetic memory device includes a reference magnetic pattern and a free magnetic pattern stacked on a substrate, a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, a first non-magnetic pattern on the free magnetic pattern, the free magnetic pattern being between the tunnel barrier pattern and the first non-magnetic pattern, a second non-magnetic pattern on the first non-magnetic pattern, the first non-magnetic pattern being between the free magnetic pattern and the second non-magnetic pattern, a metal pattern between the first non-magnetic pattern and the second non-magnetic pattern, and a conductive layer on a side surface of the first non-magnetic pattern.

A magnetoresistive random access memory (MRAM) includes a first conductor and a magnetic tunnel junction (MTJ) having a bottom electrode. An anchor via connects the first conductor to the bottom electrode. The anchor via includes a via conductor encapsulated within a diffusion barrier. The diffusion barrier includes a conductive cap disposed between the via conductor and the bottom electrode.

A magnetoresistive random access memory (MRAM) includes a first conductor and a magnetic tunnel junction (MTJ) having a bottom electrode. An anchor via connects the first conductor to the bottom electrode. The anchor via includes a via conductor encapsulated within a diffusion barrier. The diffusion barrier includes a conductive cap disposed between the via conductor and the bottom electrode.

A magnetoresistive random-access memory cell includes a templating layer, including a binary alloy having an alternating layer lattice structure, and a half metallic Heusler multilayer structure including a plurality of layers of two different Heusler compounds, at least one of which is half metallic. The half metallic Heusler multilayer structure is located outward of the templating layer and exhibits perpendicular magnetic anisotropy (PMA). A tunnel barrier is outward of the half metallic Heusler multilayer structure, and a magnetic layer is outward of the tunnel barrier.

A magnetoresistive random-access memory cell includes a templating layer, including a binary alloy having an alternating layer lattice structure, and a half metallic Heusler multilayer structure including a plurality of layers of two different Heusler compounds, at least one of which is half metallic. The half metallic Heusler multilayer structure is located outward of the templating layer and exhibits perpendicular magnetic anisotropy (PMA). A tunnel barrier is outward of the half metallic Heusler multilayer structure, and a magnetic layer is outward of the tunnel barrier.

An magnetoresistive random access memory (MRAM) device includes a magnetic tunnel junction, and a spin-orbit torque material. Based on a current applied to the spin-orbit torque material, the spin-orbit torque material generates spin polarization along one or multiple axes.