In one aspect, a magnetic tunnel junction (MTJ) device includes an MTJ element including a magnetic reference layer, a magnetic free layer, and a non-magnetic barrier layer separating the magnetic reference layer and the magnetic free layer. Further, a spin-orbit torque (SOT) layer structure is arranged below the MTJ element and configured to provide a write current switching a magnetization direction of the magnetic free layer through SOT. The SOT layer structure includes a heavy metal layer and a magnetic layer. The magnetic layer is arranged below the heavy metal layer and configured to induce a magnetic field in the magnetic free layer in a direction of the write current through the SOT layer structure, thereby promoting deterministic switching of the magnetization of the magnetic free layer.

A magnetic domain wall moving layer, reference layer, non-magnetic layer, a first, second, and third electrode. Magnetic domain wall moving layer includes first area wherein an orientation direction of magnetization is fixed, second area wherein orientation direction of magnetization is fixed in direction different from that of first area, and third area sandwiched between first and second areas wherein orientation direction of magnetization is changeable. First electrode is connected to first area. Second electrode is connected to second area. In magnetic domain wall moving element, a read current flows between second and third electrodes. In first direction, a center of third area in first direction is between center of first connection surface of third electrode and reference layer in first direction and center of second connection surface of second electrode and magnetic domain wall moving layer in first direction.

A magnetic domain wall moving layer, reference layer, non-magnetic layer, a first, second, and third electrode. Magnetic domain wall moving layer includes first area wherein an orientation direction of magnetization is fixed, second area wherein orientation direction of magnetization is fixed in direction different from that of first area, and third area sandwiched between first and second areas wherein orientation direction of magnetization is changeable. First electrode is connected to first area. Second electrode is connected to second area. In magnetic domain wall moving element, a read current flows between second and third electrodes. In first direction, a center of third area in first direction is between center of first connection surface of third electrode and reference layer in first direction and center of second connection surface of second electrode and magnetic domain wall moving layer in first direction.

A memory device of embodiments includes a memory cell including: a first conductive layer; a second conductive layer; a third conductive layer provided between the first conductive layer and the second conductive layer; a variable resistance layer provided between the first conductive layer and the third conductive layer; and a switching layer provided between the third conductive layer and the second conductive layer. The switching layer contains an oxide of a first element, which is at least one element selected from a group consisting of zirconium, yttrium, tantalum, lanthanum, cerium, titanium, hafnium, and magnesium, and a compound of a second element that is at least one element selected from a group consisting of zinc, tin, gallium, indium, and bismuth and a third element that is at least one element selected from a group consisting of tellurium, sulfur, and selenium.

A memory device of embodiments includes a memory cell including: a first conductive layer; a second conductive layer; a third conductive layer provided between the first conductive layer and the second conductive layer; a variable resistance layer provided between the first conductive layer and the third conductive layer; and a switching layer provided between the third conductive layer and the second conductive layer. The switching layer contains an oxide of a first element, which is at least one element selected from a group consisting of zirconium, yttrium, tantalum, lanthanum, cerium, titanium, hafnium, and magnesium, and a compound of a second element that is at least one element selected from a group consisting of zinc, tin, gallium, indium, and bismuth and a third element that is at least one element selected from a group consisting of tellurium, sulfur, and selenium.

A superparamagnetic tunnel junction element and a computing system using same, wherein the tunnel junction element has excellent operational stability against an external magnetic field and is suitable for the computing system based on probabilistic computing. The superparamagnetic tunnel junction element includes a first ferromagnetic layer group containing a ferromagnetic material, a second ferromagnetic layer group containing a ferromagnetic material, and a barrier layer disposed between the first ferromagnetic layer group and the second ferromagnetic layer group, wherein the first ferromagnetic layer group 14 includes a (1-1)th ferromagnetic layer, a (1-2)th ferromagnetic layer, and a first nonmagnetic coupling layer, the (1-1)th ferromagnetic layer is made of a ferromagnetic material, the magnetization direction thereof changes with a first time constant, the first time constant is one second or shorter, and the first nonmagnetic coupling layer contains at least one of Ru, Ir, Rh, Cr, and Cu.

A superparamagnetic tunnel junction element and a computing system using same, wherein the tunnel junction element has excellent operational stability against an external magnetic field and is suitable for the computing system based on probabilistic computing. The superparamagnetic tunnel junction element includes a first ferromagnetic layer group containing a ferromagnetic material, a second ferromagnetic layer group containing a ferromagnetic material, and a barrier layer disposed between the first ferromagnetic layer group and the second ferromagnetic layer group, wherein the first ferromagnetic layer group 14 includes a (1-1)th ferromagnetic layer, a (1-2)th ferromagnetic layer, and a first nonmagnetic coupling layer, the (1-1)th ferromagnetic layer is made of a ferromagnetic material, the magnetization direction thereof changes with a first time constant, the first time constant is one second or shorter, and the first nonmagnetic coupling layer contains at least one of Ru, Ir, Rh, Cr, and Cu.

A magnetic memory device may include a spin current channel layer, a wiring crossing the spin current channel layer, and an MTJ layer at an intersection of the spin current channel layer and the wiring. The spin current channel layer may include an MgO-based layer and a beta (?)-phase tungsten (W) layer on the MgO-based layer. The beta (?)-phase tungsten (W) layer may be in contact with the MTJ layer.

A magnetic memory device may include a spin current channel layer, a wiring crossing the spin current channel layer, and an MTJ layer at an intersection of the spin current channel layer and the wiring. The spin current channel layer may include an MgO-based layer and a beta (?)-phase tungsten (W) layer on the MgO-based layer. The beta (?)-phase tungsten (W) layer may be in contact with the MTJ layer.

A domain wall displacement element includes a magnetoresistance element which has a reference layer and a domain wall displacement layer each containing a ferromagnetic body, a non-magnetic layer, and first and second magnetization fixed layers which are in contact with the displacement layer, wherein the first layer has a first region in contact with the displacement layer, a non-magnetic first intermediate layer, and a second region contacting the first intermediate layer, the first region has a first ferromagnetic layer contacting the first intermediate layer, the second region has a second ferromagnetic layer contacting the first intermediate layer, the first and second ferromagnetic layers are ferromagnetically coupled, a ferromagnetic layer closest to the displacement layer in the first region and a ferromagnetic layer closest to displacement layer in the second magnetization fixed layer have the same film configuration, and the first and second regions are different in film configuration.