Various embodiments provide a triaxial magnetic sensor, formed on or in a substrate of semiconductor material having a surface that includes a sensing portion and at least one first and one second sensing wall, which are not coplanar to each other. The sensing portion and the first sensing wall form a first solid angle, the sensing portion and the second sensing wall form a second solid angle, and the first sensing wall and the second sensing wall form a third solid angle. A first Hall-effect magnetic sensor extends at least partially over the sensing portion, a second Hall-effect magnetic sensor extends at least partially over the first sensing wall, and a third Hall-effect magnetic sensor extends at least partially over the second sensing wall.

A method of controlling a trajectory of a perpendicular magnetization switching of a ferromagnetic layer using spin-orbit torques in the absence of any external magnetic field includes: injecting a charge current J.sub.e through a heavy-metal thin film disposed adjacent to a ferromagnetic layer to produce spin torques which drive a magnetization M out of an equilibrium state towards an in-plane of a nanomagnet; turning the charge current J.sub.e off after t.sub.e seconds, where an effective field experienced by the magnetization of the ferromagnetic layer H.sub.eff is significantly dominated by and in-plane anisotropy H.sub.kx, and where M passes a hard axis by precessing around the H.sub.eff; and passing the hard axis, where H.sub.eff is dominated by a perpendicular-to-the-plane anisotropy H.sub.kz, and where M is pulled towards the new equilibrium state by precessing and damping around H.sub.eff, completing a magnetization switching.

A spin element includes an element portion including a first ferromagnetic layer, a conducting portion that extends in a first direction as viewed in a lamination direction of the first ferromagnetic layer and faces the first ferromagnetic layer, and a current path extending from the conducting portion to a semiconductor circuit and having a resistance adjusting portion between the conducting portion and the semiconductor circuit, wherein the resistance value of the resistance adjusting portion is higher than the resistance value of the conducting portion, and the temperature coefficient of the volume resistivity of a material forming the resistance adjusting portion is lower than the temperature coefficient of the volume resistivity of a material forming the conducting portion.

This spin element includes: a current-carrying part that extends in a first direction; and an element part that is laminated on one surface of the current-carrying part, wherein the current-carrying part includes a first wiring and a second wiring in order from a side of the element part, and wherein both of the first wiring and the second wiring are metals and temperature dependence of resistivity of the first wiring is larger than temperature dependence of resistivity of the second wiring in at least a temperature range of −40° C. to 100° C.

Various embodiments of the present disclosure are directed towards a semiconductor structure including a memory cell overlying a substrate. A lower via underlies the memory cell. The lower via is laterally offset from the memory cell by a lateral distance. A first conductive layer is disposed vertically between the memory cell and the lower via and comprising a first material. The first conductive layer continuously extends along the lateral distance. A second conductive layer extends across an upper surface of the first conductive layer and comprises a second material different from the first material. A bottom surface of the second conductive layer is aligned with a bottom surface of the memory cell.

A magnetization rotation element includes: a spin-orbit torque wiring; a first ferromagnetic layer laminated on the spin-orbit torque wiring; and a low resistance layer laminated on a region that does not overlap the first ferromagnetic layer when viewed in a laminating direction of the spin-orbit torque wiring, the spin-orbit torque wiring includes a first region, a second region, and a third region, the first region overlaps the first ferromagnetic layer when viewed in the laminating direction, the second region does not overlap the first ferromagnetic layer and the low resistance layer when viewed in the laminating direction and is located between the first region and the third region, the third region overlaps the low resistance layer when viewed in the laminating direction, a resistivity of the low resistance layer is lower than that of the spin-orbit torque wiring, and the low resistance layer is thinner than the spin-orbit torque wiring.

A magnetization rotation element includes: a spin-orbit torque wiring; a first ferromagnetic layer laminated on the spin-orbit torque wiring; and a low resistance layer laminated on a region that does not overlap the first ferromagnetic layer when viewed in a laminating direction of the spin-orbit torque wiring, the spin-orbit torque wiring includes a first region, a second region, and a third region, the first region overlaps the first ferromagnetic layer when viewed in the laminating direction, the second region does not overlap the first ferromagnetic layer and the low resistance layer when viewed in the laminating direction and is located between the first region and the third region, the third region overlaps the low resistance layer when viewed in the laminating direction, a resistivity of the low resistance layer is lower than that of the spin-orbit torque wiring, and the low resistance layer is thinner than the spin-orbit torque wiring.

The present invention relates to a kind of magnetic heterojunction structure and the method of controlling and achieving spin logic and multiple-state storage functions. The said single magnetic heterojunction structure comprises the substrate, in-plane anti-ferromagnetic layer, in-plane ferromagnetic layer, nonmagnetic layer, vertical ferromagnetic layer, and vertical anti-ferromagnetic layer respectively from the bottom up; the said in-plane ferromagnetic layer and the said vertical ferromagnetic layer are coupled together through the said nonmagnetic layer in the middle; in-plane exchange biases, namely exchange biases in the plane, exist between the said in-plane ferromagnetic layer and the said in-plane anti-ferromagnetic layer, and out-of-plane exchange biases, namely exchange biases out of the plane, exist between the said vertical ferromagnetic layer and the said vertical anti-ferromagnetic layer.

A ferromagnetic free layer, a preparation method and an application thereof are provided, where the ferromagnetic layer includes a magnetic film alloy, and the magnetic film alloy includes multiple layers of laminated films. A thickness of each of the films decreases gradually from a first end to a second end of the magnetic film alloy, so as to break in-plane structural symmetry of the magnetic film alloy, and the films include heavy metal films and ferromagnetic metal films, where out-of-plane crystal symmetry of the magnetic film alloy is broken by means of component gradients. When a current is applied in plane of the magnetic film alloy, a spin orbit torque will be generated, which directly drives the magnetic moment of the magnetic film alloy to undergo a deterministic magnetization reversal.

A magnetoresistive effect element includes a reference layer, a barrier layer, a recording layer, and a channel layer that are disposed on top of one another, and a first terminal connected to the reference layer, and a second terminal and a third terminal connected to the channel layer. The channel layer includes a first channel layer and a second channel layer, the first channel layer has electrical resistance larger than electrical resistance of the second channel layer, the second terminal is connected to the first channel layer, and the third terminal is connected to the second channel layer, a write current flows between the second terminal and the third terminal via the first channel layer and the second channel layer, and a read current flows between the first terminal and the third terminal.