A magnetic memory device comprises a cylindrical core and a plurality of layers surrounding the core. The plurality of layers include a metallic buffer layer, a ferromagnetic storage layer, a barrier layer, and a ferromagnetic reference layer. The cylindrical core, the metallic buffer layer, the ferromagnetic storage layer, the barrier layer, and the ferromagnetic reference layer collectively form a magnetic tunnel junction. A magnetization of the ferromagnetic layer storage parallels an interface between the metallic buffer layer and ferromagnetic storage layer.

A miniature oxygen sensor makes use of paramagnetic properties of oxygen gas to provide a fast response time, low power consumption, improved accuracy and sensitivity, and superior durability. The miniature oxygen sensor disclosed maintains a sample of ambient air within a micro-channel formed in a semiconductor substrate. O.sub.2 molecules segregate in response to an applied magnetic field, thereby establishing a measurable Hall voltage. Oxygen present in the sample of ambient air can be deduced from a change in Hall voltage with variation in the applied magnetic field. The magnetic field can be applied either by an external magnet or by a thin film magnet integrated into a gas sensing cavity within the micro-channel. A differential sensor further includes a reference element containing an unmagnetized control sample. The miniature oxygen sensor is suitable for use as a real-time air quality monitor in consumer products such as smart phones.

A semiconductor device includes a semiconductor substrate having a plurality of Hall elements formed therein, and a magnetic body formed on the semiconductor substrate and having a magnetic flux converging function. The contour in vertical cross-section of the magnetic body on the semiconductor substrate has an outer circumferential portion. At least a part of the outer circumferential portion has a portion having an approximate quadrant shape, and a portion contiguous to the approximate quadrant portion and substantially parallel to the semiconductor substrate.

An apparatus is provided which comprises: a magnetic junction having a magnet with a first magnetization; an interconnect adjacent to the magnetic junction, wherein the interconnect comprises an antiferromagnetic (AFM) material which is doped with a doping material (Pt, Ni, Co, or Cr) and a structure adjacent to the interconnect such that the magnetic junction and the structure are on opposite surfaces of the interconnect, wherein the structure comprises a magnet with a second magnetization substantially different from the first magnetization.

Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.

A component with a magnetic field sensor. The electronic component is located in a semiconductor substrate or on the surface of the semiconductor substrate and is surrounded at least partially, preferably largely, by a trench in the semiconductor substrate. The trench is filled with a filling material.

A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor substrate having a plurality of Hall elements formed therein, and a magnetic body formed on the semiconductor substrate and having a magnetic flux converging function. The contour in vertical-cross section of the magnetic body on the semiconductor substrate has an outer circumferential portion. At least a part of the outer circumferential portion has a curve-shaped portion and a portion substantially parallel to the semiconductor substrate. The magnetic body has at least a part of a structure made of non-magnetic substance embedded therein.

A memory cell is disclosed which includes a conductive layer, an insulating layer disposed atop the conducting layer, a semiconductor layer disposed atop the insulating layer, a first electrode coupled to the semiconductor layer, a second electrode coupled to the semiconductor layer, wherein the first and second electrodes are separated from one another and wherein the semiconductor layer extends beyond the first and second electrodes forming a first wing, a third electrode coupled to the conductive layer, a first magnetic tunnel junction (MTJ) disposed on the first wing, and a first read electrode coupled to the first MTJ.

Provided is a spin current magnetization rotational element, including: a first ferromagnetic metal layer for a magnetization direction to be changed; and a spin-orbit torque wiring which extends in a second direction intersecting a first direction that is a plane-orthogonal direction of the first ferromagnetic metal layer, the first ferromagnetic metal layer being located on one surface of the spin-orbit torque wiring, wherein the spin-orbit torque wiring has a structure in which a spin conduction layer and an interfacial spin generation layer are alternately laminated in the first direction, a number of a plurality of the interfacial spin generation layers is two or more, and at least one of the plurality of the interfacial spin generation layer is made of a compound.

A spin-orbit torque magnetoresistive random-access memory device formed by fabricating a first electrode upon a conductive contact of an underlying semiconductor device, forming a first vertical magnetoresistive random-access memory (MRAM) cell stack upon the first electrode, forming a spin-Hall-effect (SHE) layer above and in electrical contact with the MRAM cell stack, forming a protective dielectric layer covering a portion of the SHE layer, forming a second vertical MRAM cell stack above and in electrical contact with an exposed portion of the SHE layer, forming a second electrode above and in electrical contact with the second vertical MRAM cell stack, and forming a metal contact above and in electrical connection with the second electrode.