Provided is a novel thermoelectric conversion element with which the thermoelectric power generated in a direction orthogonal to both a temperature gradient and the magnetization can be increased without changing the thermoelectric conversion characteristic of a magnetic material. The present invention is provided with: thermoelectric layer 10 comprising a thermoelectric material exhibiting the Seebeck effect; magnetic body layer 20 stacked on thermoelectric layer 10, said magnetic body layer 20 being conductive and the magnetization or an external magnetic field thereof being oriented in the thickness direction of magnetic body layer 20; low-temperature-side conductor part 44 connecting low-temperature-side end portion 12 of thermoelectric layer 10 and low-temperature-side end portion 22 of magnetic body layer 20; high-temperature-side conductor part 42 connecting high-temperature-side end portion 14 of thermoelectric layer 10 and high-temperature-side end portion 24 of magnetic body layer 20; and output terminals (26a, 26b) for extracting a potential generated in the vector product direction of temperature gradient direction (∇T) of thermoelectric layer 10 and magnetization direction (M) of magnetic body layer 20.

Provided is a novel thermoelectric conversion element with which the thermoelectric power generated in a direction orthogonal to both a temperature gradient and the magnetization can be increased without changing the thermoelectric conversion characteristic of a magnetic material. The present invention is provided with: thermoelectric layer 10 comprising a thermoelectric material exhibiting the Seebeck effect; magnetic body layer 20 stacked on thermoelectric layer 10, said magnetic body layer 20 being conductive and the magnetization or an external magnetic field thereof being oriented in the thickness direction of magnetic body layer 20; low-temperature-side conductor part 44 connecting low-temperature-side end portion 12 of thermoelectric layer 10 and low-temperature-side end portion 22 of magnetic body layer 20; high-temperature-side conductor part 42 connecting high-temperature-side end portion 14 of thermoelectric layer 10 and high-temperature-side end portion 24 of magnetic body layer 20; and output terminals (26a, 26b) for extracting a potential generated in the vector product direction of temperature gradient direction (∇T) of thermoelectric layer 10 and magnetization direction (M) of magnetic body layer 20.

A die pad, a signal processing IC, an adhesive layer, and at least one magnetoelectric conversion element included in a magnetic sensor are encapsulated by a molding resin. At least a part of the first end surface of the signal processing IC is positioned on a side closer to the at least one magnetoelectric conversion element than a first end surface of the die pad on a side of the at least one magnetoelectric conversion element in a plan view. An isolation portion into which the molding resin enters is provided between the first surface of the die pad on a side of the first end surface, and the first surface of the signal processing IC on a side of the first end surface, and a thickness of the isolation portion is smaller than a thickness of the die pad.

A die pad, a signal processing IC, an adhesive layer, and at least one magnetoelectric conversion element included in a magnetic sensor are encapsulated by a molding resin. At least a part of the first end surface of the signal processing IC is positioned on a side closer to the at least one magnetoelectric conversion element than a first end surface of the die pad on a side of the at least one magnetoelectric conversion element in a plan view. An isolation portion into which the molding resin enters is provided between the first surface of the die pad on a side of the first end surface, and the first surface of the signal processing IC on a side of the first end surface, and a thickness of the isolation portion is smaller than a thickness of the die pad.

A method for fabricating a semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) stack on a substrate; forming a first spin orbit torque (SOT) layer on the MTJ stack; forming a first hard mask on the first SOT layer; and using a second hard mask to pattern the first hard mask, the first SOT layer, and the MTJ stack to form a MTJ.

A method for fabricating a semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) stack on a substrate; forming a first spin orbit torque (SOT) layer on the MTJ stack; forming a first hard mask on the first SOT layer; and using a second hard mask to pattern the first hard mask, the first SOT layer, and the MTJ stack to form a MTJ.

Systems and methods for eliminating or mitigating T-effects on Hall sensors. A system may comprise a magnet-coil arrangement for providing a relative movement therebetween to obtain a relative position, a Hall sensor for sensing the relative movement, a temperature sensor located in proximity of the Hall sensor for providing temperature sensing, and a controller having two or more channels coupled to Hall sensor and to the temperature sensor and configured to control the relative movement and to provide, based on the temperature sensing, a temperature correction input to the Hall sensor for compensating a temperature effect on the Hall sensor sensing.

A SOT device includes a bismuth antimony dopant element (BiSbE) alloy layer over a substrate. The BiSbE alloy layer is used as a topological insulator. The BiSbE alloy layer includes bismuth, antimony, AND a dopant element. The dopant element is a non-metallic dopant element, a metallic dopant element, and combinations thereof. Examples of metallic dopant elements include Ni, Co, Fe, CoFe, NiFe, NiCo, NiCu, CoCu, NiAg, CuAg, Cu, Al, Zn, Ag, Ga, In, or combinations thereof. Examples of non-metallic dopant elements include Si, P, Ge, or combinations thereof. The BiSbE alloy layer can include a plurality of BiSb lamellae layers and one or more dopant element lamellae layers. The BiSbE alloy layer has a (012) orientation.

The present disclosure generally relates to spin-orbital torque (SOT) differential reader designs. The SOT differential reader is a multi-terminal device that comprises a first shield, a first spin hall effect layer, a first free layer, a gap layer, a second spin hall effect layer, a second free layer, and a second shield. The gap layer is disposed between the first spin hall effect layer and the second spin hall effect layer. Electrical lead connections are located about the first spin hall effect layer, the second spin hall effect layer, the gap layer, the first shield, and/or the second shield. The electrical lead connections facilitate the flow of current and/or voltage from a negative lead to a positive lead. The positioning of the electrical lead connections and the positioning of the SOT differential layers improves reader resolution without decreasing the shield-to-shield spacing (i.e., read-gap).

An isolating Hall sensor structure having a support structure made of a substrate layer and an oxide layer, a semiconductor region of a first conductivity type which is integrally connected to a top side of the oxide layer, at least one trench extending from the top side of the semiconductor region to the oxide layer of the support structure, at least three first semiconductor contact regions of the first conductivity type, each extending from a top side of the semiconductor region into the semiconductor region. The at least one trench surrounds a box region of the semiconductor region. The first semiconductor contact regions are each arranged in the box region of the semiconductor region and are each spaced apart from one another. A metallic connection contact layer is arranged on each first semiconductor contact region.