A method for fabricating a bridge structure in a quantum mechanical device includes providing a substructure including a substrate having deposited thereon a layer of a first superconducting material divided into a first portion, a second portion and a third portion that are electrically insulated from each other; depositing a sacrificial layer on the substructure; electrically connecting the first portion and the second portion with a strip of a second superconducting material, the second superconducting material being different from the first superconducting material; and removing a portion of the sacrificial layer so as to form a bridge structure over the third portion between the first portion and the second portion, the bridge structure electrically connecting the first portion to the second portion while not electrically connecting the third portion to the first portion and not electrically connecting the third portion to the second portion.

This application discloses a coating method for making a chip. The method includes: fixing a substrate on a base. The substrate includes a hole. The method includes controlling an included angle between a plane on which the substrate is located and a deposition direction of a coating material to be greater than 0 degrees and less than 90 degrees. The method includes controlling the substrate to rotate with respect to an axis perpendicular to the plane on which the substrate is located. The method includes during the rotation of the substrate, controlling the coating material to enter the hole along the deposition direction such that the coating material is deposited on a sidewall of the hole.

This application discloses a coating method for making a chip. The method includes: fixing a substrate on a base. The substrate includes a hole. The method includes controlling an included angle between a plane on which the substrate is located and a deposition direction of a coating material to be greater than 0 degrees and less than 90 degrees. The method includes controlling the substrate to rotate with respect to an axis perpendicular to the plane on which the substrate is located. The method includes during the rotation of the substrate, controlling the coating material to enter the hole along the deposition direction such that the coating material is deposited on a sidewall of the hole.

A pressure-quench techniques at chosen pressures and temperatures to lock in the high-pressure-induced superconducting phase and/or non-superconducting phase in high-temperature superconductors (HTS) and room-temperature superconductors (RTS) at ambient pressure are disclosed. The techniques remove the formidable obstacle to the ubiquitous practical application of HTS and RTS. The technique successfully retain the high-pressure-induced/-enhanced high Tc and/or non-superconducting properties of HTS or RTS.

A quantum computing device is formed using a first chip and a second chip, the first chip having a first substrate, a first set of pads, and a set of Josephson junctions disposed on the first substrate. The second chip has a second substrate, a second set of pads disposed on the second substrate opposite the first set of pads, and a second layer formed on a subset of the second set of pads. The second layer is configured to bond the first chip and the second chip. The subset of the second set of pads corresponds to a subset of the set of Josephson junctions selected to avoid frequency collision between qubits in a set of qubits. A qubit is formed using a Josephson junction from the subset of Josephson junctions and another Josephson junction not in the subset being rendered unusable for forming qubits.

The present disclosure relates to a nanowire structure, which includes a substrate with a substrate body and an ion implantation region, a patterned mask with an opening over the substrate, and a nanowire. Herein, the substrate body is formed of a conducting material, and the ion implantation region that extends from a top surface of the substrate body into the substrate body is electrically insulating. A surface portion of the substrate body is exposed through the opening of the patterned mask, while the ion implantation region is fully covered by the patterned mask. The nanowire is directly formed over the exposed surface portion of the substrate body and is not in contact with the ion implantation region. Furthermore, the nanowire is confined within the ion implantation region, such that the ion implantation region is configured to provide a conductivity barrier of the nanowire in the substrate.

A semiconductor device includes a layer of a semiconductor material in which is formed an active zone; a plurality of first gates forming a plurality of lines substantially parallel to each other and covering in part the active zone; a plurality of second gates forming a plurality of columns; at least one third gate, designated measurement gate, extending along an axis substantially parallel to the lines of the plurality of lines and in a direction opposite to the lines of the plurality of lines with respect to the active zone, and a first electrode and a second electrode situated on either side of the plurality of measurement gates in the active zone.

A cryogenic multilayer interconnect structure has a substrate including a molybdenum layer, a first insulating layer on the substrate and a first superconducting layer on the first insulating layer. The molybdenum layer has a coefficient of thermal expansion (CTE) that is well matched with the CTE of cryogenic electronic chips that are to be attached to the cryogenic multilayer interconnect structure. The substrate may be a copper clad molybdenum substrate that provide the CTE advantages provided by the molybdenum layer while also providing an increased thermal conductivity to improve the dissipation of heat generated by cryogenic electronic chips coupled to the substrate.

A novel and useful modified semiconductor fabrication technique for realizing reliable semiconductor quantum structures. Quantum structures require a minimization of the parasitic capacitance of the control gate and the quantum well. The modified semiconductor process eliminates the fabrication of the metal, contact, and optionally the raised diffusion layers from the quantum wells, thereby resulting in much lower well and gate capacitances and therefore larger Coulomb blockade voltages. This allows easier implementation of the electronic control circuits in that they can have larger intrinsic noise and relaxed analog resolution. Several processes are disclosed including implementations of semiconductor quantum structures with tunneling through an oxide layer as well as tunneling through a local well depleted region. These techniques can be used in both planar semiconductor processes and 3D, e.g., FinFET, semiconductor processes. A dedicated process masking step is used for realizing the raised diffusions. In addition, the edge of the raised diffusion layer may be placed either in the gate region or the active layer region.

The subject matter of the present disclosure may be embodied in devices, such as flexible wiring, that include: an elongated flexible substrate; multiple electrically conductive traces arranged in an array on a first side of the elongated flexible substrate; and an electromagnetic shielding layer on a second side of the elongated flexible substrate, the second side being opposite the first side, in which the elongated flexible substrate includes a fold region between a first electronically conductive trace and a second electrically conductive trace such that the electromagnetic shielding layer provides electromagnetic shielding between the first electronically conductive trace and the second electrically conductive trace.